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Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templatesKAI WANG; QIAN GONG; HAIFEI ZHOU et al.Applied surface science. 2014, Vol 291, pp 45-47, issn 0169-4332, 3 p.Conference Paper

Self-limited SiH₂Cl₂ gas source molecular beam epitaxy on Si(100)FEHRENBACHER, M; RAUSCHER, H; BEHM, R. J et al.Surface science. 2001, Vol 491, Num 1-2, pp 275-299, issn 0039-6028Article

A study on GaP/Si heterostructures grown by GS-MBEYU, J.-Z; CHEN, B; YU, Z et al.SPIE proceedings series. 1998, pp 9-12, isbn 0-8194-3012-9Conference Paper

Ge surface segregation during Si_1-xGe_x(011) gas-source molecular beam epitaxy from Si₂H₆ and Ge₂H₆TAYLOR, N; KIM, H; GREENE, J. E et al.Surface science. 2001, Vol 475, Num 1-3, pp 171-180, issn 0039-6028Article

Texture analysis of GaAs nanowiresJARVIS, V; BITTEN, J. F; LAPIERRE, R. R et al.Semiconductor science and technology. 2011, Vol 26, Num 2, issn 0268-1242, 025014.1-025014.5Article

Substrate temperature dependence of Si growth by an electron beam irradiation technique using a Si₂H₆ gas sourceHIROSE, F; SAKAMOTO, H.Applied surface science. 1998, Vol 135, Num 1-4, pp 293-296, issn 0169-4332Article

Gas source MBE grown Al_0.52In_0.48P photovoltaic detectorLI, C; ZHANG, Y. G; GU, Y et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 501-503, issn 0022-0248, 3 p.Conference Paper

Delta p⁺-doped InGaAs grown by gas source MBE for novel optoelectronic memorySAKATA, H; NAGAO, Y; MATSUSHIMA, Y et al.Journal of crystal growth. 1999, Vol 201202, pp 1065-1068, issn 0022-0248Conference Paper

Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)LIU, J. L; CAI, S. J; JIN, G. L et al.Journal of crystal growth. 1999, Vol 200, Num 1-2, pp 106-111, issn 0022-0248Article

Formation of compressively strained Si/Si_1―xC_x/Si(100) heterostructures using gas-source molecular beam epitaxyARIMOTO, Keisuke; FURUKAWA, Hiroshi; YAMANAKA, Junji et al.Journal of crystal growth. 2013, Vol 362, pp 276-281, issn 0022-0248, 6 p.Conference Paper

Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxyCHEN, Yi-Ren; CHOU, Li-Chang; YANG, Ying-Jay et al.Thin solid films. 2012, Vol 520, Num 13, pp 4486-4492, issn 0040-6090, 7 p.Article

The I-V characteristics of InAs/GaAs quantum dot laserCHUANHE MA; HAILONG WANG; YAN ZHOU et al.Physica. B, Condensed matter. 2011, Vol 406, Num 19, pp 3636-3639, issn 0921-4526, 4 p.Article

Temperature-dependent carbon incorporation into the Si_1-yC_y film during gas-source molecular beam epitaxy using monomethylsilaneKONNO, A; SENTHIL, K; MURATA, T et al.Applied surface science. 2006, Vol 252, Num 10, pp 3692-3696, issn 0169-4332, 5 p.Article

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxySHEN, X. Q; RAMVALL, P; RIBLET, P et al.Journal of crystal growth. 2000, Vol 209, Num 2-3, pp 396-400, issn 0022-0248Conference Paper

Gas-source molecular beam epitaxy of SiGe virtual substrates : I. Growth kinetics and dopingHARTMANN, J. M; GALLAS, B; FERGUSON, R et al.Semiconductor science and technology. 2000, Vol 15, Num 4, pp 362-369, issn 0268-1242Article

Incorporation mechanism of dopant phosphorus in the Si growth using Si₂H₆ and PH₃HIROSE, F.Journal of crystal growth. 2000, Vol 212, Num 1-2, pp 103-108, issn 0022-0248Article

The {1010} inversion domains in GaN/sapphire layers : an electron microscopy analysis of the atomic structure of the boundariesPOTIN, V; NOUET, G; RUTERANA, P et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1999, Vol 79, Num 12, pp 2899-2919, issn 1364-2804Article

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)LIU, J. P; HUANG, D. D; LI, J. P et al.Journal of crystal growth. 1999, Vol 200, Num 3-4, pp 613-616, issn 0022-0248Article

Prediction of concentration profile for P doping in Si gas-source molecular beam epitaxyHIROSE, F; SAKAMOTO, H.Journal of crystal growth. 1999, Vol 196, Num 1, pp 115-121, issn 0022-0248Article

Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxyEUN SOO KIM; USAMI, N; SHIRAKL, Y et al.Semiconductor science and technology. 1999, Vol 14, Num 3, pp 257-265, issn 0268-1242Article

Gas-source molecular beam epitaxial growth of SiGe alloy-based 'naked' quantum wellsKISHIMOTO, Y; SHIRAKI, Y; FUKATSU, S et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 81-85, issn 0040-6090Conference Paper

Low-resistance polycrystalline GaAs grown by gas-source molecular beam epitaxy using CBr₄LI, N. Y; TU, C. W.Journal of crystal growth. 1998, Vol 188, Num 1-4, pp 45-49, issn 0022-0248Conference Paper

Growth kinetics of GaN grown by gas-source molecular beam epitaxyJENNY, J. R; KASPI, R; EVANS, K. R et al.Journal of crystal growth. 1997, Vol 175-76, pp 89-93, issn 0022-0248, 1Conference Paper

Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopyLEW, A. Y; YAN, C. H; TU, C. W et al.Applied surface science. 1996, Vol 104-05, pp 522-528, issn 0169-4332Conference Paper