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Characterisation of intrinsic and compensated defect microstructures in dilute III-V-N alloysTALWAR, D. N.IEE proceedings. Circuits, devices and systems. 2003, Vol 150, Num 6, pp 529-536, issn 1350-2409, 8 p.Article

Critical island size of the SiC formation on Si(1 0 0) and Si(1 1 1)SCHARMANN, F; ATTENBERGER, W; LINDNER, J. K. N et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 201-204, issn 0921-5107Conference Paper

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Study on growth and characterizations of Ga_xIn_1-xP/GaAs solar cell structureKINACI, B; ÖZEN, Y; ASAR, T et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 9, pp 3269-3274, issn 0957-4522, 6 p.Article

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P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBESOUBERVIELLE-MONTALVO, C; HERNANDEZ, I. C; SHELDON, M et al.Journal of crystal growth. 2007, Vol 301-302, pp 84-87, issn 0022-0248, 4 p.Conference Paper

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Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF₂(111)WU, H. F; ZHANG, H. J; LU, Y. H et al.Journal of crystal growth. 2006, Vol 294, Num 2, pp 179-183, issn 0022-0248, 5 p.Article

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Arsenic surface segregation during in situ doped silicon and Si_1-xGe_x molecular beam epitaxyXIAN LIU; QIANG TANG; HARRIS, James S et al.Journal of crystal growth. 2005, Vol 281, Num 2-4, pp 334-343, issn 0022-0248, 10 p.Article

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Surface morphology of heavily carbon-doped GaAs grown by solid source molecular beam epitaxyTAN, K. H; YOON, S. F; ZHANG, R et al.Journal of crystal growth. 2004, Vol 263, Num 1-4, pp 105-113, issn 0022-0248, 9 p.Article

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