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Results 1 to 25 of 830

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Investigations on the liquid Phase Epitaxial growth of GaAs using Ga-As-Bi solutionJEGANATHAN, K; SARAVANAN, S; BASKAR, K et al.SPIE proceedings series. 1998, pp 325-328, isbn 0-8194-2756-X, 2VolConference Paper

Comment on the radio emission arising in the crystallization of some liquids in reference to the paper by O. I. Gudzenko et al., Zh. Tekh. Fiz. 55, 612-614 (1985) [Sov. Phys. Tech. Phys. 30, 362 (1985)]KACHURIN, L. G; TORSTVEIT, S.Soviet physics. Technical physics. 1991, Vol 36, Num 5, issn 0038-5662, p. 582Article

Evaluation of binary and ternary melts for the low temperature liuqid phase epitaxial growth of siliconSOO HONG LEE; GREEN, M. A.Journal of electronic materials. 1991, Vol 20, Num 8, pp 635-641, issn 0361-5235Article

Sumpfphasehydrierung von Kunststoffen. II: Kontinuierliche Versuche = Liquid phase hydrogenation of plastics. II: Continuous experimentsKUNZE, P; WOLFRAM, G; MOTHES, J et al.Plaste und Kautschuk. 1993, Vol 40, Num 5, pp 159-164, issn 0048-4350Article

Fluid flows induced in tall narrow containers by A.C.R.TCAPPER, P; GOSNEY, J. J; JONES, C. L et al.Journal of electronic materials. 1986, Vol 15, Num 6, pp 361-370, issn 0361-5235Article

Single crystal growth of CuxMo6Se8CHANDRA SHEKAR, N. V; GOVINDA RAJAN, K; VISHWANATH, R. N et al.Journal of crystal growth. 1990, Vol 104, Num 2, pp 445-449, issn 0022-0248Article

Proceedings. IV/Materials sciences in space, topical meeting: Committee on Space Research, 26th. plenary meeting, Toulouse, France, 30th. June-11th. July 1986LEGROS, J. C.Advances in space research. 1986, Vol 6, Num 5, issn 0273-1177, 167 p.Conference Proceedings

Non-equilibrium gradient-zone crystallization in semiconductorsEVSEEV, B. S.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp K31-K34, issn 0031-8965Article

Supported liquid-phase rhodium catalyst for acetylene hydrochlorinationPANOVA, S. A; SHESTAKOV, G. K; TEMKIN, O. N et al.Journal of the Chemical Society. Chemical communications. 1994, Num 8, issn 0022-4936, p. 977Article

Scaling analysis of semiconductor crystal growth from the liquid phase in an axis static magnetic fieldINATOMI, Yuko; KATO, Ayako; HORIUCHI, Kengo et al.Materials transactions - JIM. 2000, Vol 41, Num 8, pp 1026-1033, issn 0916-1821Article

A differential equation connected with the dendritic growth of crystalsHAMMERSLEY, J. M; MAZZARINO, G.IMA journal of applied mathematics. 1989, Vol 42, Num 1, pp 43-75, issn 0272-4960Article

Terraced substrate inner stripe semiconductor lasers by one-step liquid-phase epitaxyGUOTONG DU; XIAOYU MA; ZHENG ZOU et al.Journal of applied physics. 1989, Vol 66, Num 5, pp 2225-2227, issn 0021-8979Article

Stability of anisotropic liquid-solid interfacesCSERTI, J; TICHY, G.Acta metallurgica. 1986, Vol 34, Num 6, pp 1029-1034, issn 0001-6160Article

Hot filament CVD of Fe―Cr catalyst for thermal CVD carbon nanotube growth from liquid petroleum gasAKBARZADEH PASHA, M; SHAFIEKHANI, A; VESAGHI, M. A et al.Applied surface science. 2010, Vol 256, Num 5, pp 1365-1371, issn 0169-4332, 7 p.Article

Cross-twinning model of fcc crystal growthVAN DE WAAL, B. W.Journal of crystal growth. 1996, Vol 158, Num 1-2, pp 153-165, issn 0022-0248Article

Diamond formed at low pressures and temperatures through liquid-phase hydrothermal synthesisSZYMANSKI, A; ABGAROWICZ, E; BAKON, A et al.Diamond and related materials. 1995, Vol 4, Num 3, pp 234-235, issn 0925-9635Article

Numerical simulation of the growth of HgCdTe layers by liquid phase epitaxy from Te-rich solutions : the effect of liquid dimensions and mercury lossSANZ-MAUDES, J; SANGRADOR, J; RODRIGUEZ, T et al.Journal of crystal growth. 1990, Vol 106, Num 2-3, pp 303-317, issn 0022-0248Article

Refractive index as a measure for saturation and supersaturation in crystal growth of water-soluble substancesTAKUBO, H.Journal of crystal growth. 1990, Vol 104, Num 2, pp 239-244, issn 0022-0248Article

Very-low-temperature liquid-phase epitaxial growth of siliconLEE, S. H; HEALY, S. A; YOUNG, T. L et al.Materials letters (General ed.). 1990, Vol 9, Num 2-3, pp 53-56, issn 0167-577XArticle

Relationship between surface treatment of ZnTe substrates and morphology of CdSe epitaxial layers in liquid phase epitaxyONOME, S; YAMADA, T; SANO, M et al.Japanese journal of applied physics. 1989, Vol 28, Num 9, pp 1648-1653, issn 0021-4922, 6 p., 1Article

Oblique flow onto a growing crystal interface: an exact solutionIWAN, J; ALEXANDER, D.Journal of crystal growth. 1988, Vol 89, Num 2-3, pp 251-256, issn 0022-0248Article

Adiabatic nucleation in large molecule liquidsMEYER, E.Journal of crystal growth. 1987, Vol 84, Num 3, pp 533-538, issn 0022-0248Article

Laser-assisted growth of diamond particulates on a silicon surface from a cyclohexane liquidLU, Y. F; HUANG, S. M; WANG, X. B et al.Applied physics. A, Materials science & processing (Print). 1998, Vol 66, Num 5, pp 543-547, issn 0947-8396Article

High-quality GaAs layers on Si substrates grown by the hybrid method combining molecular-beam and liquid phase epitaxiesYAZAWA, Y; MINEMURA, T; UNNO, T et al.Journal of applied physics. 1991, Vol 69, Num 1, pp 273-277, issn 0021-8979Article

Model for defect-free epitaxial lateral overgrowth of Si over SiO2 by liquid phase epitaxyBERGMANN, R.Journal of crystal growth. 1991, Vol 110, Num 4, pp 823-834, issn 0022-0248Article

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