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Low-temperature growth of thin Pb layers and the quantum size effectSCHMICKER, D; HIBMA, T; EDWARDS, K. A et al.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 5, pp 969-980, issn 0953-8984Article

Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructuresTABATA, A; BENYATTOU, T; POGANY, D et al.Applied surface science. 1993, Vol 65-66, pp 814-820, issn 0169-4332Conference Paper

Combined (1×2) → (1×1) transition and atomic roughening of Ge(001) studied with surface x-ray diffractionJOHNSON, A. D; NORRIS, C; FRENKEN, J. W. M et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 3, pp 1134-1138, issn 0163-1829Article

X-ray reflectivity study of surface melting on Pb (110)GAY, J. M; PLUIS, B; FRENKEN, J. W. M et al.Journal de physique. Colloques. 1989, Vol 50, Num 10, pp C7.289-C7.293, issn 0449-1947, supplConference Paper

A search for relaxation in a bulk Pd40Ni40P20 metallic glass = Une recherche de la relaxation dans un verre métallique Pd40Ni40P20 massifCOMINS, J. D; MACDONALD, J. E; GIBBS, M. R. J et al.Journal of physics. F. Metal physics. 1987, Vol 17, Num 1, pp 19-26, issn 0305-4608Article

Comparison of the elastic behaviour of CuGe4P3 with that of CuGe2P3MACDONALD, J. E; SAUNDERS, G. A; OMAR, M. S et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 2, pp K137-K141, issn 0031-8965Article

Sketchbook, 1915-1922. J. E. H. MacDonaldMACDONALD, J. E. H.1979, 90 p.Book

Au-poly(3-hexylthiophene) contact behaviour at high resolutionLEI, C. H; DAS, A; ELLIOTT, M et al.Synthetic metals. 2004, Vol 145, Num 2-3, pp 217-220, issn 0379-6779, 4 p.Article

X-ray diffraction study of the structure of thin polyfluorene filmsKAWANA, S; DURRELL, M; LU, J et al.Polymer (Guildford). 2002, Vol 43, Num 6, pp 1907-1913, issn 0032-3861Article

Metrology of semiconductor device structures by cross-sectional AFMJENKINS, C; WESTWOOD, D. I; ELLIOTT, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 138-141, issn 0921-5107Conference Paper

Relaxation in InxGa1-xAs/InP for compressive and tensile strainCLARK, S. A; MACDONALD, J. E; WESTWOOD, D. I et al.Journal of crystal growth. 1992, Vol 121, Num 4, pp 743-750, issn 0022-0248Article

Growth of pseudomorphic insulating HoF3 layers on Si(111)GRIFFITHS, C. L; MACDONALD, J. E; WILLIAMS, R. H et al.Journal of applied physics. 1991, Vol 70, Num 3, pp 1858-1860, issn 0021-8979Article

The influence of Sb as a surfactant on the strain relaxation of Ge/Si(001)THORNTON, J. M. C; WILLIAMS, A. A; MACDONALD, J. E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 2146-2149, issn 0734-211XConference Paper

Angle calculations for a five-circle diffractometer used for surface X-ray diffractionVLIEG, E; VAN DER VEEN, J. F; MACDONALD, J. E et al.Journal of applied crystallography. 1987, Vol 20, Num 5, pp 330-337, issn 0021-8898Article

Elastic behavior and vibrational anharmonicity of a bulk Pd40Ni40P20 metallic glass = Comportement élastique et anharmonicité vibrationnelle d'un verre métallique en volume Pd40Ni40P20LAMBSON, E. F; LAMBSON, W. A; MACDONALD, J. E et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2380-2385, issn 0163-1829Article

Elastic behaviour under pressure of the cluster compound (Ag6Ge4P12)Ge6MACDONALD, J. E; SAUNDERS, G. A; YOGURTCU, Y. K et al.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 8, pp 951-956, issn 0022-3697Article

Observation of oxygen Frenkel disorder in uranium dioxide above 2000 K by use of neutron-scattering techniquesCLAUSEN, K; HAYES, W; MACDONALD, J. E et al.Physical review letters. 1984, Vol 52, Num 14, pp 1238-1241, issn 0031-9007Article

Acute effects of aldosterone on intracardiac monophasic action potentials. Editorial commentTILLMANN, Hanns-Christian; SCHUMACHER, Burghard; YASENYEV, Oleksiy et al.International journal of cardiology. 2002, Vol 84, Num 1, pp 33-40, issn 0167-5273Article

Observation of a structural transition during the low-temperature growth of the Si(111)7 x 7-Pb interfaceEDWARDS, K. A; HOWES, P. B; MACDONALD, J. E et al.Surface science. 1999, Vol 424, Num 2-3, pp 169-178, issn 0039-6028Article

Strain relaxation studied by photoluminescence by double crystal X-ray diffraction measurements in strained InGaAsTABATA, A; BENYATTOU, T; GUILLOT, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 22, Num 2-3, pp 222-226, issn 0921-5107Article

Alexithymia, reactivity, and the adverse impact of hassles-based stressKOHN, P. M; GUREVICH, M; PICKERING, D. I et al.Personality and individual differences. 1994, Vol 16, Num 6, pp 805-812, issn 0191-8869Article

Bud development in coastal Douglas-fir seedlings under controlled-environment conditionsMACDONALD, J. E; OWENS, J. N.Canadian journal of forest research (Print). 1993, Vol 23, Num 6, pp 1203-1212, issn 0045-5067Article

Hassles, anxiety, and negative well-beingKOHN, P. M; MACDONALD, J. E.Anxiety, stress, and coping. 1992, Vol 5, Num 2, pp 151-163Article

In situ X-ray scattering studies of the deposition of Ge atoms on Ge (111)VAN SILFHOUT, R. G; FRENKEN, J. W. M; VAN DER VEEN, J. F et al.Journal de physique. Colloques. 1989, Vol 50, Num 10, pp C7.295-C7.300, issn 0449-1947, supplConference Paper

Surface X-ray scattering during crystal growth: Ge on Ge(111)VLIEG, E; DENIER VAN DER GON, A. W; VAN DER VEEN, J. F et al.Physical review letters. 1988, Vol 61, Num 19, pp 2241-2244, issn 0031-9007Article

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