MODULATED SEMICONDUCTOR STRUCTURES: AN OVERVIEW OF SOME BASIC CONSIDERATIONS FOR GROWTH AND DESIRED ELECTRONIC STRUCTUREMADHUKAR A.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 20; NO 2; PP. 149-161; BIBL. 48 REF.Article

CHEMISORPTION BONDING AND BOND LENGTHS ON TRANSITION METAL SURFACES: EFFECT OF COORDINATION AND VALENCY SATURATION.MADHUKAR A.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 4; PP. 461-465; BIBL. 10 REF.Article

COUPLED ELECTRON-PHONON SYSTEM IN TWO DIMENSIONS AND ITS IMPLICATIONS FOR INVERSION LAYERS.MADHUKAR A.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 1; PP. 11-14; BIBL. 17 REF.Article

THE ELECTRONIC STRUCTURE OF SI/GAP (110) INTERFACE AND SUPERLATTICEMADHUKAR A; DELGADO J.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 3; PP. 199-203; BIBL. 11 REF.Article

EXACT SOLUTION FOR THE DIFFUSION OF A PARTICLE IN A MEDIUM WITH SITE DIAGONAL AND OFF-DIAGONAL DYNAMIC DISORDER.MADHUKAR A; POST W.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 39; NO 22; PP. 1424-1427; BIBL. 14 REF.Article

STUDY OF ELECTRON-PHONON INTERACTION AND MAGNETO-OPTICAL ANOMALIES IN TWO-DIMENSIONALLY CONFINED SYSTEMSDASSARMA S; MADHUKAR A.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 6; PP. 2823-2836; BIBL. 42 REF.Article

STUDY OF THE INTERFACE ELECTRONIC STRUCTURE OF A MODEL METAL-SEMICONDUCTOR INTERFACELOWY DN; MADHUKAR A.1978; PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 10; PP. 3832-3843; BIBL. 21 REF.Article

A DERIVATION FOR THE ENREGY DEPENDENCE OF THE DENSITY OF BAND TAIL STATES IN DISORDERED MATERIALSSINGH J; MADHUKAR A.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 3; PP. 241-244; BIBL. 10 REF.Article

ELECTRONIC STRUCTURE OF SIO₂: ALPHA -QUARTZ AND THE INFLUENCE OF LOCAL DISORDERNUCHO RN; MADHUKAR A.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 4; PP. 1576-1588; BIBL. 35 REF.Article

ELECTRON-PHONON INTERACTION AND CYCLOTRON RESONANCE IN TWO-DIMENSIONAL ELECTRON GASHOROVITZ B; MADHUKAR A.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 8; PP. 695-698; BIBL. 13 REF.Article

THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI/SIO₂ INTERFACESINGH J; MADHUKAR A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 884-886; BIBL. 11 REF.Article

THEORY OF THE TRANSVERSE STATIC MAGNETOCONDUCTIVITY IN A TWO-DIMENSIONAL ELECTRON-PHOTON SYSTEMGRABOWSKI M; MADHUKAR A.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 1; PP. 29-31; BIBL. 11 REF.Article

COLLECTIVE MODES OF SPATIALLY SEPARATED, TWO-COMPONENT, TWO-DIMENSIONAL PLASMA IN SOLIDSSARMA SD; MADHUKAR A.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 2; PP. 805-815; BIBL. 24 REF.Article

ON THE ROLE OF NUCLEAR MOTIONS IN ELECTRON AND EXCITATION TRANSFER RATES: IMPORTANCE OF TRANSFER-INTEGRAL DEPENDENCE UPON-NUCLEAR COORDINATE.RATNER RA; MADHUKAR A.1978; CHEM. PHYS.; NETHERL.; DA. 1978; VOL. 30; NO 2; PP. 201-215; BIBL. 40 REF.Article

A NEW METHOD FOR CALCULATING NON-IDEAL POINT DEFECT INDUCED ELECTRONIC STRUCTURE: APPLICATION TO GAAS_1-XP_X: 0SINGH J; MADHUKAR A.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 12; PP. 947-950; BIBL. 14 REF.Article

STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYSDAS SARMA S; MADHUKAR A.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 4; PP. 2051-2068; BIBL. 36 REF.Article

CATION AND ANION IDEAL VACANCY INDUCED GAP LEVELS IN SOME III-V COMPOUND SEMICONDUCTORSDAS SARMA S; MADHUKAR A.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 3; PP. 183-186; BIBL. 18 REF.Article

STUDY OF THE ELECTRONIC STRUCTURE OF MODEL (110) SURFACES AND INTERFACES OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTORS: THE GASB-INAS SYSTEMDANDEKAR NV; MADHUKAR A; LOWY DN et al.1980; PHYS. REV. B; USA; DA. 1980; VOL. 21; NO 12; PP. 5687-5705; BIBL. 39 REF.Article

COMMENT ON "QUANTUM THEORY OF ELECTRON STIMULATED DESORPTION" BY W. BRENIG.BELL B; COHEN MH; GOMER R et al.1976; SURF. SCI.; NETHERL.; DA. 1976; VOL. 61; NO 2; PP. 656-660; BIBL. 8 REF.Article

An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substratesGUHA, S; MADHUKAR, A.Journal of applied physics. 1993, Vol 73, Num 12, pp 8662-8664, issn 0021-8979Article

Nature of the oscillatory surface smoothness and its consequence during molecular-beam epitaxy of strained layers: a computer simulation studyGHAISAS, S. V; MADHUKAR, A.Journal of applied physics. 1989, Vol 65, Num 5, pp 1888-1892, issn 0021-8979, 5 p.Article

Examination of the nature of lattice matched III-V semiconductor interfaces using computer simulated molecular beam epitaxial growth. II: A_xB_1-xC/BC interfacesTHOMSEN, M; MADHUKAR, A.Journal of crystal growth. 1987, Vol 84, Num 1, pp 98-114, issn 0022-0248Article

A kinetic model for thermal nitridation of SiO₂/SiVASQUEZ, R. P; MADHUKAR, A.Journal of applied physics. 1986, Vol 60, Num 1, pp 234-242, issn 0021-8979Article

Role of surface molecular reactions in influencing the growth mechanism and the nature of nonequilibrium surfaces: a Monte Carlo study of molecular-beam epitaxyGHAISAS, S. V; MADHUKAR, A.Physical review letters. 1986, Vol 56, Num 10, pp 1066-1069, issn 0031-9007Article

Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensityMADHUKAR, A; GHAISAS, S. V.Applied physics letters. 1985, Vol 47, Num 3, pp 247-249, issn 0003-6951Article