Direct Band-to-Band Tunneling in Reverse Biased MoS₂ Nanoribbon p-n JunctionsRAM KRISHNA GHOSH; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 274-279, issn 0018-9383, 6 p.Article

Quantum capacitance in bilayer graphene nanoribbonBHATTACHARYA, Sitangshu; MAHAPATRA, Santanu.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 7-8, pp 1127-1131, issn 1386-9477, 5 p.Article

An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFETJANDHYALA, Srivatsava; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 6, pp 1663-1671, issn 0018-9383, 9 p.Article

Large-Signal Model for Independent DG MOSFETPANKAJ KUMAR THAKUR; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 1, pp 46-52, issn 0018-9383, 7 p.Article

Modeling and analysis of energy quantization effects on single electron inverter performanceSURYA SHANKAR DAN; MAHAPATRA, Santanu.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 8, pp 1410-1416, issn 1386-9477, 7 p.Article

Realization of multiple valued logic and memory by hybrid SETMOS architectureMAHAPATRA, Santanu; IONESCU, Adrian Mihai.IEEE transactions on nanotechnology. 2005, Vol 4, Num 6, pp 705-714, issn 1536-125X, 10 p.Article

Proposal for Graphene-Boron Nitride Heterobilayer-Based Tunnel FETRAM KRISHNA GHOSH; MAHAPATRA, Santanu.IEEE transactions on nanotechnology. 2013, Vol 12, Num 5, pp 665-667, issn 1536-125X, 3 p.Article

Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate TransistorRAY, Biswajit; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 2, pp 260-266, issn 0018-9383, 7 p.Article

Nonquasi-Static Charge Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness AsymmetrySHARAN, Neha; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2419-2422, issn 0018-9383, 4 p.Article

Analytical Study of Low-Field Diffusive Transport in Highly Asymmetric Bilayer Graphene NanoribbonBHATTACHARYA, Sitangshu; MAHAPATRA, Santanu.IEEE transactions on nanotechnology. 2011, Vol 10, Num 3, pp 409-416, issn 1536-125X, 8 p.Article

Justifying threshold voltage definition for undoped body transistors through crossover point conceptRATUL KUMAR BARUAH; MAHAPATRA, Santanu.Physica. B, Condensed matter. 2009, Vol 404, Num 8-11, pp 1029-1032, issn 0921-4526, 4 p.Article

Modeling and Analysis of Body Potential of Cylindrical Gate-All-Around Nanowire TransistorRAY, Biswajit; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 9, pp 2409-2416, issn 0018-9383, 8 p.Article

Analytical modeling of quantum threshold voltage for triple gate MOSFETRAKESH KUMAR, P; MAHAPATRA, Santanu.Solid-state electronics. 2010, Vol 54, Num 12, pp 1586-1591, issn 0038-1101, 6 p.Article

Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJANDHYALA, Srivatsava; ABRAHAM, Aby; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 7, pp 1974-1979, issn 0018-9383, 6 p.Article

Assessment of SET Logic Robustness Through Noise Margin ModelingSATHE, Chaitanya; SURYA SHANKAR DAN; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 909-915, issn 0018-9383, 7 p.Article

Physics-Based Solution for Electrical Resistance of Graphene Under Self-Heating EffectVERMA, Rekha; BHATTACHARYA, Sitangshu; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 502-505, issn 0018-9383, 4 p.Article

Solution of Time Dependent Joule Heat Equation for a Graphene Sheet Under Thomson EffectVERMA, Rekha; BHATTACHARYA, Sitangshu; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3548-3554, issn 0018-9383, 7 p.Article

Physics-Based Band Gap Model for Relaxed and Strained [100] Silicon NanowiresRAM KRISHNA GHOSH; BHATTACHARYA, Sitangshu; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 6, pp 1765-1772, issn 0018-9383, 8 p.Article

A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate TransistorsSAHOO, Avinash; PANKAJ KUMAR THAKUR; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 3, pp 632-636, issn 0018-9383, 5 p.Article

A novel single electron SRAM architectureMAHAPATRA, Santanu; IONESCU, Adrian Mihai.IEEE conference on nanotechnology. 2004, pp 287-289, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

Bipolar Poisson Solution for Independent Double-Gate MOSFETABRAHAM, Aby; PANKAJ KUMAR THAKUR; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 498-501, issn 0018-9383, 4 p.Article

Thermoelectric Performance of a Single-Layer Graphene Sheet for Energy HarvestingVERMA, Rekha; BHATTACHARYA, Sitangshu; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 2064-2070, issn 0018-9383, 7 p.Article

k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowireRAM KRISHNA GHOSH; BHATTACHARYA, Sitangshu; MAHAPATRA, Santanu et al.Solid-state electronics. 2013, Vol 80, pp 124-134, issn 0038-1101, 11 p.Article

Modeling of Temperature and Field-Dependent Electron Mobility in a Single-Layer Graphene SheetVERMA, Rekha; BHATTACHARYA, Sitangshu; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 8, pp 2695-2698, issn 0018-9383, 4 p.Article

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness AsymmetryJANDHYALA, Srivatsava; KASHYAP, Rutwick; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1002-1007, issn 0018-9383, 6 p.Article