Extracting parameters from the current-voltage characteristics of polycrystalline octithiophene thin film field-effect transistorsBOURGUIGA, R; MAHDOUANI, M; MANSOURI, S et al.EPJ. Applied physics (Print). 2007, Vol 39, Num 1, pp 7-16, issn 1286-0042, 10 p.Article

Direct Extraction Method of HBT Equivalent-Circuit Elements Relying Exclusively on S-Parameters Measured at Normal Bias ConditionsOUDIR, A; MAHDOUANI, M; BOURGUIGA, R et al.IEEE transactions on microwave theory and techniques. 2011, Vol 59, Num 8, pp 1973-1982, issn 0018-9480, 10 p.Article

Small-signal modeling of Emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained baseOUDIR, A; MAHDOUANI, M; MANSOURI, S et al.Solid-state electronics. 2010, Vol 54, Num 1, pp 67-78, issn 0038-1101, 12 p.Article

Extraction of the InP/lnGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuitBOURGUIGA, R; OUDIR, A; MAHDOUANI, M et al.EPJ. Applied physics (Print). 2008, Vol 42, Num 3, pp 177-186, issn 1286-0042, 10 p.Article

Analytic model for organic thin film transistors (OTFTs): effect of contact resistances application to the octithiopheneMANSOURI, S; MAHDOUANI, M; OUDIR, A et al.EPJ. Applied physics (Print). 2009, Vol 48, Num 3, issn 1286-0042, 30401.p1-30401.p10Article

Enhancement and red shift of photoluminescence (PL) of fresh porous Si under prolonged laser irradiation or ageing: Role of surface vibration modesGARDELIS, S; NASSIOPOULOU, A. G; MAHDOUANI, M et al.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 6, pp 986-989, issn 1386-9477, 4 p.Article