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Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates. I. Role of implanted BF2O'NEIL, P. A; ÖZTÜRK, M. C; BATCHELOR, A. D et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 8, pp 3070-3078, issn 0013-4651Article

Ultahigh vacuum rapid thermal chemical vapor deposition of epitaxial silicon on (100) silicon. II: Carbon incorporation into layers and at interfaces of multilayer structuresSANGANERIA, M. K; ÖZTÜRK, M. C; HARRIS, G et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 11, pp 3970-3974, issn 0013-4651Article

Experimental determination of low order structure factors in the intermetallic compound TiAlSWAMINATHAN, S; JONES, I. P; ZALUZEC, N. J et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1993, Vol 170, Num 1-2, pp 227-235, issn 0921-5093Conference Paper

New source of dislocations in GexSi1-x/Si(100) strained epitaxial layersEAGLESHAM, D. J; MAHER, D. M; KVAM, E. P et al.Physical review letters. 1989, Vol 62, Num 2, pp 187-190, issn 0031-9007, 4 p.Article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineeringBAN, I; ÖZTÜRK, M. C; MISRA, V et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 3, pp 1189-1196, issn 0013-4651Article

Ultrahigh vacuum rapid thermal chemical vapor deposition of epitaxial silicon onto (100) silicon. I: The influence of prebake on (epitaxy/substrate) interfacial oxygen and carbon levelsSANGANERIA, M. K; ÖZTÜRK, M. C; HARRIS, G et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 11, pp 3961-3969, issn 0013-4651Article

Nanometre hole formation in MgO using electron beamsTURNER, P. S; BULLOUGH, T. J; DEVENISH, R. W et al.Philosophical magazine letters. 1990, Vol 61, Num 4, pp 181-193, issn 0950-0839Article

Dislocation nucleation near the critical thickness in GeSi/Si strained layersEAGLESHAM, D. J; KVAM, E. P; MAHER, D. M et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1989, Vol 59, Num 5, pp 1059-1073, issn 0141-8610, 15 p.Article

Effects of oxygen during selective silicon epitaxial growth using disilane and chlorineO'NEIL, P. A; ÖZTÜRK, M. C; BATCHELOR, A. D et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 6, pp 2344-2352, issn 0013-4651Article

Quality of selective silicon epitaxial films deposited using disilane and chlorineO'NEIL, P. A; ÖZTÜRK, M. C; BATCHELOR, A. D et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 6, pp 2337-2343, issn 0013-4651Article

On the role of chlorine in selective silicon epitaxy by chemical vapor depositionVIOLETTE, K. E; O'NEIL, P. A; ÖZTÜRK, M. C et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 10, pp 3290-3296, issn 0013-4651Article

Boron incorporation in epitaxial silicon using Si2H6 and B2H6 in an ultrahigh vacuum rapid thermal chemical vapor deposition reactorSANGANERIA, M. K; VIOLETTE, K. E; ÖZTÜRK, M. C et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 1, pp 285-289, issn 0013-4651Article

Smooth amorphous silicon deposition on silicon dioxide with high deposition rates by rapid thermal chemical vapor deposition using disilaneVIOLETTE, K. E; ÖZTÜRK, M. C; CHRISTENSEN, K et al.Materials letters (General ed.). 1995, Vol 25, Num 5-6, pp 305-309, issn 0167-577XArticle

Formation of titanium and cobalt germanides on Si (100) using rapid thermal processingASHBURN, S. P; ÖZTÜRK, M. C; WORTMAN, J. J et al.Journal of electronic materials. 1992, Vol 21, Num 1, pp 81-86, issn 0361-5235Conference Paper

Tetragonal and monoclinic forms of GexSi1-x epitaxial layersEAGLESHAM, D. J; MAHER, D. M; FRASER, H. L et al.Applied physics letters. 1989, Vol 54, Num 3, pp 222-224, issn 0003-6951, 3 p.Article

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorineO'NEIL, P. A; ÖZTÜRK, M. C; VIOLETTE, K. E et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 9, pp 3309-3315, issn 0013-4651Article

Debye-Waller factors in off-stoichiometric γ-TiAl : Effect of ordering of excess Al atoms on Ti sitesSWAMINATHAN, S; JONES, I. P; MAHER, D. M et al.Philosophical magazine letters. 1996, Vol 73, Num 6, pp 319-330, issn 0950-0839Article

Silicon nucleation and film evolution on silicon dioxide using disilane : rapid thermal chemical vapor deposition of very smooth silicon at high deposition ratesVIOLETTE, K. E; ÖZTÜRK, M. C; CHRISTENSEN, K. N et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 2, pp 649-657, issn 0013-4651Article

Growth kinetics, silicon nucleation on silicon dioxide, and selective epitaxy using disilane and hydrogen in an ultrahigh vacuum rapid thermal chemical vapor deposition reactorVIOLETTE, K. E; SANGANERIA, M. K; ÖZTÜRK, M. C et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 11, pp 3269-3273, issn 0013-4651Article

Deposition and characterization of polysilicon films deposited by rapid thermal processingXIAOWEI REN; ÖZTÜRK, C; WORTMAN, J. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 3, pp 1081-1086, issn 0734-211XArticle

Highly stable W/p-In0.53 Ga0.47As ohmic contacts formed by rapid thermal processingKATZ, A; WEIR, B. E; MAHER, D. M et al.Applied physics letters. 1989, Vol 55, Num 21, pp 2220-2222, issn 0003-6951Article

Study of structural faults in Ti-diffused lithium niobateTWIGG, M. E; MAHER, D. M; NAKAHARA, S et al.Applied physics letters. 1987, Vol 50, Num 9, pp 501-503, issn 0003-6951Article

Effect of active layer placement on the threshold current of 1.3-μm InGaAsP etched mesa buried heterostructure lasersDUTTA, N. K; NELSON, R. J; WILSON, R. B et al.Applied physics letters. 1984, Vol 45, Num 4, pp 337-339, issn 0003-6951Article

Effects of oxygen on selective silicon deposition using disilaneO'NEIL, P. A; ÖZTÜRK, M. C; BATCHELOR, A. D et al.Materials letters (General ed.). 1999, Vol 38, Num 6, pp 418-422, issn 0167-577XArticle

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates. II. Role of implanted arsenicO'NEIL, P. A; ÖZTÜRK, M. C; BATCHELOR, A. D et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 8, pp 3079-3086, issn 0013-4651Article

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