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EXTRINSIC PHOTOCONDUCTIVITY IN PLATINUM-DOPED SILICONBICKLEY WP; EDDOLLS DV; MAHER EF et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 23; PP. 898-899; BIBL. 3 REF.Article

CONTROL OF INDOOR RADON DECAY PRODUCTS BY AIR TREATMENT DEVICESHINDS WC; RUDNICK SN; MAHER EF et al.1983; JOURNAL OF THE AIR POLLUTION CONTROL ASSOCIATION; ISSN 0002-2470; USA; DA. 1983; VOL. 33; NO 2; PP. 134-136; BIBL. 8 REF.Article

ELECTRON-IRRADIATED EXTRINSIC SILICON DETECTORS FOR 3-5 MU M FOCAL-PLANE ARRAYSMAHER EF; EDDOLLS DV; HOLEMAN BR et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 5; PP. 216-217; BIBL. 8 REF.Article

THEORY OF TRANSIENT PHOTOCONDUCTIVITY IN COUNTER-DOPED SEMICONDUCTORSHERBERT DC; HUMPHREYS R; HOLEMAN B et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 26; PP. 4979-4993; BIBL. 16 REF.Article

ANALYSIS OF TRANSIENT PHOTOCONDUCTIVITY IN COUNTERDOPED SILICON: GOLDMAHER EF; BICKLEY WP; DEBNEY BT et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 9; PP. 2011-2022; BIBL. 8 REF.Article

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