au.\*:("MAHESHWARI LK")
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TURN-OFF SWITCHING ANALYSIS OF A SATURATION-CONTROLLED TRANSISTOR CIRCUIT.CHAUHAN AS; MAHESHWARI LK.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 4; PP. 405-407; BIBL. 7 REF.Article
OPTIMUM IMPURITY DISTRIBUTION FOR MINIMUM BASE TRANSIT TIME IN JUNCTION TRANSISTORS.MAHESHWARI LK; JHANWAR SN.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 3; PP. 435-436; BIBL. 3 REF.Article
SYNTHESIS OF BASE IMPURITY DISTRIBUTIONS FOR IMPROVED FIGURE OF MERIT OF TRANSISTORS.MAHESHWARI LK; RAMANAN KV.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 307-312; BIBL. 6 REF.Article
SATURATION-CONTROLLED MONOSTABLE CIRCUITCHAUHAN AS; MAHESHWARI LK.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 53; NO 4; PP. 353-356; BIBL. 2 REF.Article
A NOVEL METHOD TO IMPROVE THE FIGURE OF MERIT OF MICRO-MINIATURISED TRANSISTORS.MAHESHWARI LK; RAMANAN KV.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 9; PP. 446-449; BIBL. 4 REF.Article
X-RAY RADIATION EFFECTS ON SEMICONDUCTOR DEVICES.CHAUHAN AS; MAHESHWARI LK.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 4; PP. 226-228; BIBL. 9 REF.Article
BUILT-IN ELECTRIC FIELD DUE TO ARBITRARY BASE IMPURITY DISTRIBUTIONS IN JUNCTION TRANSISTORS.MAHESHWARI LK; RAMANAN KV.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 1; PP. 1-4; BIBL. 6 REF.Article