High-quality diamond films grown at high deposition rates using high-power-density MWPCVD method with conventional quartz-type chamberNAKAI, Takahiro; ARIMA, Kazuya; MAIDA, Osamu et al.Journal of crystal growth. 2007, Vol 309, Num 2, pp 134-139, issn 0022-0248, 6 p.Article

Sensitivity improvement of γ-ray detector fabricated with self-standing CVD diamond by attaching heavy element filmSATO, Hidenori; MAIDA, Osamu; ITO, Toshimichi et al.Diamond and related materials. 2012, Vol 29, pp 2-7, issn 0925-9635, 6 p.Article

Characterization of substrate off-angle effects for high-quality homoepitaxial CVD diamond filmsMAIDA, Osamu; MIYATAKE, Hidetaka; TERAJI, Tokuyuki et al.Diamond and related materials. 2008, Vol 17, Num 4-5, pp 435-439, issn 0925-9635, 5 p.Conference Paper

Structure optimization of diamond personal dosimeters based on Monte Carlo simulationsSATO, Hidenori; MAIDA, Osamu; ITO, Toshimichi et al.Diamond and related materials. 2011, Vol 20, Num 2, pp 140-144, issn 0925-9635, 5 p.Article

Postoxidation annealing treatments to improve Si/ultrathin SiO₂ characteristics formed by nitric acid oxidationASUHA; LIU, Yueh-Ling; MAIDA, Osamu et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 12, pp G824-G828, issn 0013-4651Article

Reduced influences of the HPHT substrates on the electronic quality of homoepitaxial CVD diamond layers and on their ultraviolet detector performanceMAIDA, Osamu; SATO, Hidenori; KANASUGI, Masayuki et al.Diamond and related materials. 2011, Vol 20, Num 2, pp 242-245, issn 0925-9635, 4 p.Article

Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO₂ interfaceMAIDA, Osamu; ASANO, Akira; TAKAHASHI, Masao et al.Surface science. 2003, Vol 542, Num 3, pp 244-252, issn 0039-6028, 9 p.Article

High growth rate deposition of phosphorus-doped homoepitaxial (001) diamond films for deep-ultraviolet light emitting deviceMAIDA, Osamu; TADA, Shuhei; ITO, Toshimichi et al.Thin solid films. 2014, Vol 557, pp 227-230, issn 0040-6090, 4 p.Conference Paper

Complete prevention of reaction at HfO₂/Si interfaces by 1 nm silicon nitride layerKOBAYASHI, Hikaru; IMAMURA, Kentaro; FUKAYAMA, Ken-Ichi et al.Surface science. 2008, Vol 602, Num 11, pp 1948-1953, issn 0039-6028, 6 p.Article

Characterization of phosphorus-doped homoepitaxial (100) diamond films grown using high-power-density MWPCVD method with a conventional quartz-tube chamberNAKAI, Takahiro; MAIDA, Osamu; ITO, Toshimichi et al.Applied surface science. 2008, Vol 254, Num 19, pp 6281-6284, issn 0169-4332, 4 p.Conference Paper

Preparation of fluorocarbon thin film deposited by soft X-ray ablation and its electrical characteristics and thermal stabilityKANASHIMA, Takeshi; MAIDA, Osamu; KOHMA, Norihiro et al.Applied surface science. 2006, Vol 252, Num 22, pp 7774-7780, issn 0169-4332, 7 p.Article

Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layerKOBAYASHI, Hikaru; KOBAYASHI, Takuya; ASANO, Akira et al.Proceedings - Electrochemical Society. 2003, pp 199-210, issn 0161-6374, isbn 1-56677-347-4, 12 p.Conference Paper