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UNBIASED INP DETECTORS IN THE SUBMILLIMETER WAVE REGIONTAKADA T; MAKIMURA T; ISHIBASHI T et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 20; PP. 765-766; BIBL. 3 REF.Article

HYBRID INTEGRATED FREQUENCY DOUBLERS AND TRIPLERS TO 300 AND 450 GHZTAKADA T; MAKIMURA T; OHMORI M et al.1980; IEEE TRANS. MICROWAVE TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 9; PP. 966-973; BIBL. 13 REF.Article

GH2 BAND SI DDR DIODES.INO M; MAKIMURA T; YAMAZAKI H et al.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 7-8; PP. 797-804; BIBL. 20 REF.Article

LIQUID-NITROGEN-COOLED SUBMILLIMETRE-WAVE SILICON IMPATT DIODES.ISHIBASHI T; INO M; MAKIMURA T et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 10; PP. 299-300; BIBL. 3 REF.Article

GHZ SILICON DIAMOND-HEATSINK IMPATT DIODESINO M; MAKIMURA T; ISHIBASHI T et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 2-3; BIBL. 5 REF.Article

POWER CONSIDERATIONS IN IMPATT-DIODE ARRAYS WITH INCOMPLETE THERMAL ISOLATIONSUZUKI H; KURITA O; INO M et al.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 632-638; BIBL. 17 REF.Article

A new two-level resist patterning process based on resist volatilization under deep UV exposureMAKIMURA, T; KATO, N.Journal of the Electrochemical Society. 1988, Vol 135, Num 7, pp 1772-1773, issn 0013-4651Article

Time-resolved X-ray absorption spectroscopy for laser-ablated silicon particles in xenon gasMAKIMURA, T; SAKURAMOTO, T; MURAKAMI, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 6A, pp L735-L737, issn 0021-4922, 2Article

Visible light emission from SiOx films synthesized by laser ablationMAKIMURA, T; KUNII, Y; ONO, N et al.Japanese journal of applied physics. 1996, Vol 35, Num 12B, pp L1703-L1705, issn 0021-4922, 2Article

Light emission from nanometer-sized silicon particles fabricated by the laser ablation methodMAKIMURA, T; KUNII, Y; MURAKAMI, K et al.Japanese journal of applied physics. 1996, Vol 35, Num 9A, pp 4780-4784, issn 0021-4922, 1Article

Passivation of p-type dopants in GaAs by process induced hydrogenation and reactivation by thermal annealingNAKAJIMA, O; NAGATA, K; MAKIMURA, T et al.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp L1704-L1706, issn 0021-4922, 2Article

Extrinsic base surface recombination current in surface-passivated InGaP/GaAs heterojunction bipolar transistorsITO, H; NAKAJIMA, O; NAGATA, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 10B, pp L1500-L1502, issn 0021-4922, 2Article

Effects of zotepine, chlorpromazine and haloperidol on D-1, D-2, D-3 and D-4 subtypes of dopamine receptors in rat striatal and bovine caudate nucleus membranesAKIMA, T; MAKIHATA, J; MAKIMURA, T et al.Neurochemistry international. 1986, Vol 8, Num 4, pp 559-564, issn 0197-0186Article

Femtosecond time-resolved spectroscopic studies of the dynamics of the relaxation of excitons in the lowest adiabatic potential energy surface in NaClMAKIMURA, T; TANIMURA, K; ITOH, N et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 24, pp 4581-4600, issn 0953-8984Article

Development of air-assisted injector systemHARADA, K; SHIMIZU, R; KURITA, K et al.SAE transactions. 1992, Vol 101, Num 3, pp 400-407, issn 0096-736XArticle

Femtosecond cascade-excitation spectroscopy for nonradiative deexcitation and lattice relaxation of the self-trapped exciton in NaClTOKIZAKI, T; MAKIMURA, T; AKIYAMA, H et al.Physical review letters. 1991, Vol 67, Num 19, pp 2701-2704, issn 0031-9007Article

Sub-wavelength micromachining of silica glass by irradiation of CO2 laser with Fresnel diffractionOKAZAKI, K; TORII, S; MAKIMURA, T et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 104, Num 2, pp 593-599, issn 0947-8396, 7 p.Article

Silicon nanoparticles embedded in SiO2 films with visible photoluminescenceMAKIMURA, T; KUNII, Y; ONO, N et al.Applied surface science. 1998, Vol 127-29, pp 388-392, issn 0169-4332Conference Paper

Dynamics of silicon plume generated by laser ablation and its chemical reactionMAKIMURA, T; MURAKAMI, K.Applied surface science. 1996, Vol 96-98, pp 242-250, issn 0169-4332Conference Paper

Ablation of silica glass using pulsed laser plasma soft X-raysMAKIMURA, T; KENMOTSU, Y; MIYAMOTO, H et al.Surface science. 2005, Vol 593, Num 1-3, pp 248-251, issn 0039-6028, 4 p.Conference Paper

Excitation of Er atoms by energy transfer from Si nanocrystallites embedded in SiO2 matrices fabricated by laser ablationMAKIMURA, T; UEMATSU, H; KONDO, K et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 4-6, pp 799-801, issn 0947-8396, 3 p.Conference Paper

In situ size measurement of Si nanoparticles and formation dynamics after laser ablationMAKIMURA, T; MIZUTA, T; TAKAHASHI, T et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 79, Num 4-6, pp 819-821, issn 0947-8396, 3 p.Conference Paper

Micromachining of Polydimethylsiloxane induced by laser plasma EUV lightTORII, S; MAKIMURA, T; OKAZAKI, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8077, issn 0277-786X, isbn 978-0-8194-8667-7, 807714.1-807714.6Conference Paper

Deposition dynamics of droplet-free Si nanoparticles in Ar gas using laser ablationTAKEUCHI, D; MIZUTA, T; MAKIMURA, T et al.Applied surface science. 2002, Vol 197-98, pp 674-678, issn 0169-4332, 5 p.Conference Paper

Dynamics of Si plume produced by laser ablation in ambient inert gas and formation of Si nanoclustersMURAKAMI, K; MAKIMURA, T; ONO, N et al.Applied surface science. 1998, Vol 127-29, pp 368-372, issn 0169-4332Conference Paper

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