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SUBSTITUTED AND BRANCHED POLYCHALCONES: SYNTHESES AND CHARACTERIZATION BY SPECTROMETRIC METHODSMALM B.1981; MAKROMOL. CHEM.; ISSN 0025-116X; CHE; DA. 1981; VOL. 182; NO 5; PP. 1307-1317; BIBL. 35 REF.Article

A TECHNICAL APPROACH TO GRINDING WHEEL SELECTIONMALM B.1981; IRON STEEL INT.; GBR; DA. 1981-06; VOL. 54; NO 3; 149-150, 152-154, 156Article

THE EFFECT OF PROTEOLYSIS ON THE STABILITY OF THE PROFILACTIN COMPLEXMALM B; NYSTROEM LE; LINDBERG U et al.1980; F.E.B.S. LETTERS; NLD; DA. 1980; VOL. 113; NO 2; PP. 241-244; BIBL. 11 REF.Article

A FLEXIBLE ASYNCHRONOUS MICROPROCESSORLAWSON HW JR; MALM B.1973; B.I.T.; DANM.; DA. 1973; VOL. 13; NO 2; PP. 165-176; BIBL. 19 REF.Serial Issue

STUDIES ON SULFOLANE. II. ELECTRO-INITIATED POLYMERIZATION OF VINYL MONOMERSMARTINMAA J; LUOTO M; MALM B et al.1973; SUOMEN KEMISTIL., B; SUOMI; DA. 1973; VOL. 46; NO 3; PP. 83-86; BIBL. 8 REF.Serial Issue

The profilin-actin complex: further characterization of profilin and studies on the stability of the complexMALM, B; LARSSON, H; LINDBERG, U et al.Journal of muscle research and cell motility. 1983, Vol 4, Num 5, pp 569-588, issn 0142-4319Article

Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gateVON HAARTMAN, Martin; GUNNAR MALM, B; ÖSTLING, Mikael et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 836-843, issn 0018-9383, 8 p.Article

Improvement of the thermal stabilization of polyethylene with lignosulphonateLEVON, K; HUHTALA, J; MALM, B et al.Polymer (Guildford). 1987, Vol 28, Num 5, pp 745-750, issn 0032-3861Article

Fabrication of high-Ge-fraction strained Si1―xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriersTAKAHASHI, Kuniaki; SAKURABA, Masao; MUROTA, Junichi et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 112-115, issn 0038-1101, 4 p.Conference Paper

Low-frequency noise in high-k LaLuO3/TiN MOSFETsOLYAEI, Maryam; GUNNAR MALM, B; HELLSTRÖM, Per-Erik et al.Solid-state electronics. 2012, Vol 78, pp 51-55, issn 0038-1101, 5 p.Conference Paper

Control of strain relaxation behavior of Ge1―xSnx buffer layersSHIMURA, Yosuke; TAKEUCHI, Shotaro; NAKATSUKA, Osamu et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 84-88, issn 0038-1101, 5 p.Conference Paper

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealingHAIGUI YANG; IYOTA, Masatoshi; IKEURA, Shogo et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 128-133, issn 0038-1101, 6 p.Conference Paper

The dynamics of the microfilament system and the possible function of profilactinLINDBERG, U; MARKEY, F; SEGURA, M et al.Journal of submicroscopic cytology. 1984, Vol 16, Num 1, pp 173-174, issn 0022-4782Article

Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wellsKASCHEL, M; SCHMID, M; OEHME, M et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 105-111, issn 0038-1101, 7 p.Conference Paper

Non-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivityLIU, Xue-Chao; MYRONOV, M; DOBBIE, A et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 42-45, issn 0038-1101, 4 p.Conference Paper

Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic baseGUNNAR MALM, B; HARALSON, Erik; SUVAR, Erdal et al.IEEE electron device letters. 2005, Vol 26, Num 4, pp 246-248, issn 0741-3106, 3 p.Article

Strained single-crystal GOI (Ge on Insulator) arrays by rapid-melting growth from Si (1 1 1) micro-seedsSAKANE, T; TOKO, K; TANAKA, T et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 22-25, issn 0038-1101, 4 p.Conference Paper

Al-Induced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growthKUROSAWA, Masashi; TOKOA, Kaoru; KAWABATA, Naoyuki et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 7-12, issn 0038-1101, 6 p.Conference Paper

Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stressTHANH VIET DINH; HONG, Sung-Min; JUNGEMANN, Christoph et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 58-64, issn 0038-1101, 7 p.Conference Paper

X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(0 0 1) substratesEBIHARA, Kouhei; KIKKAWA, Jun; NAKAMURA, Yoshiaki et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 26-30, issn 0038-1101, 5 p.Conference Paper

Ge1―xSnx stressors for strained-Ge CMOSTAKEUCHI, S; SHIMURA, Y; LOO, R et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 53-57, issn 0038-1101, 5 p.Conference Paper

Integration of MOSFETs with SiGe dots as stressor materialNANVER, L. K; JOVANOVICA, V; MIGLIO, L et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 75-83, issn 0038-1101, 9 p.Conference Paper

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