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The impact of induced gate noise when simultaneously power and conjugate noise-matching MOS transistorsMANKU, T.IEEE transactions on circuits and systems. 2, Analog and digital signal processing. 1999, Vol 46, Num 6, pp 842-844, issn 1057-7130Article

Effective recovery mechanism for latent ESD damage in LDD nMOS transistors using a hot electron treatmentMANKU, T.Electronics Letters. 1994, Vol 30, Num 24, pp 2074-2076, issn 0013-5194Article

Modeling and designing silicon thin-film inductors and transformers using HSPICE for RFIC applicationsVALKODAI, A; MANKU, T.Integration (Amsterdam). 1997, Vol 24, Num 2, pp 159-171, issn 0167-9260Article

Accelerated quasi-DC method and circuit for measuring the gate-drain coupling capacitance for devices within a CMOS process technologyMANKU, T; SINGH, G.IEE proceedings. Circuits, devices and systems. 1996, Vol 143, Num 5, pp 302-306, issn 1350-2409Article

Valence energy-band structure for strained group-IV semiconductorsMANKU, T; NATHAN, A.Journal of applied physics. 1993, Vol 73, Num 3, pp 1205-1213, issn 0021-8979Article

Electron drift mobility model for devices based on unstrained and coherently strained Si_{1-x}Ge_{x} grown on <001> silicon substrateMANKU, T; NATHAN, A.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 9, pp 2082-2089, issn 0018-9383Article

An analytical model for floating-gate MOSFET including the effects of the overlapping capacitanceMANKU, T; HEASELL, E. L.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2821-2823, issn 0018-9383Article

Carrier transport parameters for devices based on Si_{1-x}Ge_{x} strained layersMANKU, T; NATHAN, A.Microelectronics journal. 1992, Vol 23, Num 6, pp 463-469, issn 0959-8324Article

Effective mass for strained p-type Si_{1-x}Ge_{x}MANKU, T; NATHAN, A.Journal of applied physics. 1991, Vol 69, Num 12, pp 8414-8416, issn 0021-8979, 3 p.Article

Lattice mobility of holes in strained and unstrained Si_{1-x}Ge_{x} alloysMANKU, T; NATHAN, A.IEEE electron device letters. 1991, Vol 12, Num 12, pp 704-706, issn 0741-3106Article

Accelerated IC test procedure for measuring capacitor ratios using DC extraction techniquesMANKU, T; SWART, N. R.Electronics Letters. 1995, Vol 31, Num 13, pp 1050-1051, issn 0013-5194Article

Temperature-independent output voltage generated by threshold voltage of an NMOS transistorMANKU, T; WANG, Y.Electronics Letters. 1995, Vol 31, Num 12, pp 935-936, issn 0013-5194Article

Modeling of piezo-Hall effects in n-doped silicon devicesNATHAN, A; MANKU, T.Applied physics letters. 1993, Vol 62, Num 23, pp 2947-2949, issn 0003-6951Article

A DC method for measuring all the gate capacitors in MOS devices with Atto-Farad resolutionMANKU, T; MACEACHERN, L.IEEE transactions on semiconductor manufacturing. 1998, Vol 11, Num 1, pp 141-145, issn 0894-6507Article

A small-signal MOSFET model for radio frequency IC applicationsABOU-ALLAM, E; MANKU, T.IEEE transactions on computer-aided design of integrated circuits and systems. 1997, Vol 16, Num 5, pp 437-447, issn 0278-0070Article

The thermomagnetic carrier transport equationNATHAN, A; MANKU, T.Sensors and actuators. A, Physical. 1993, Vol 36, Num 3, pp 193-197, issn 0924-4247Article

Electrical properties of silicon under nonuniform stressMANKU, T; NATHAN, A.Journal of applied physics. 1993, Vol 74, Num 3, pp 1832-1837, issn 0021-8979Article

Energy-band structure for strained p-type Si_{1-x}Ge_{x}MANKU, T; NATHAN, A.Physical review. B, Condensed matter. 1991, Vol 43, Num 15, pp 12634-12637, issn 0163-1829, 4 p.Article

Reliability problems of polysilicon/Al contacts due to grain-boundary enhanced thermomigration effectsMANKU, T; ORCHARD-WEBB, J. H.IEEE transactions on reliability. 1995, Vol 44, Num 4, pp 550-555, issn 0018-9529Article

On the reduction of hole mobility in strained p-SiGe layersMANKU, T; JAIN, S. C; NATHAN, A et al.Journal of applied physics. 1992, Vol 71, Num 9, pp 4618-4619, issn 0021-8979Article

Measured in-plane hole drift and Hall mobility in heavily-doped strained p-type Si_{1-x}Ge_{x}MCGREGOR, J. M; MANKU, T; NOËL, J.-P et al.Journal of electronic materials. 1993, Vol 22, Num 3, pp 319-321, issn 0361-5235Article

Effective mobility in p-channel Si-SiGe metal oxide semiconductor field effect transistors (MOSFETs)MANKU, T; NATHAN, A.Canadian journal of physics (Print). 1992, Vol 70, Num 10-11, pp 959-962, issn 0008-4204Conference Paper

Bipolar transistor base bandgap grading for minimum delayMCGREGOR, J. M; MANKU, T; ROULSTON, D. J et al.Solid-state electronics. 1991, Vol 34, Num 4, pp 421-422, issn 0038-1101, 2 p.Article

A single chip direct conversion CMOS transceiver for quad-band GSM/GPRS/EDGE and WLAN with integrated VCO's and fractional-N synthesizerMANKU, T; KAHRIZI, M; DEVISON, S et al.IEEE radio frequency integrated circuits symposium. 2004, pp 423-426, isbn 0-7803-8333-8, 1Vol, 4 p.Conference Paper

A low-voltage design technique for RF integrated circuitsMANKU, T; BECK, G; SHIN, E. J et al.IEEE transactions on circuits and systems. 2, Analog and digital signal processing. 1998, Vol 45, Num 10, pp 1408-1413, issn 1057-7130Conference Paper