An atiempt at quantum thermal physicsMARES, J. J; SESTAK, J.Journal of thermal analysis and calorimetry. 2005, Vol 82, Num 3, pp 681-686, issn 1388-6150, 6 p.Article

From caloric to stathmograph and polarographySESTAK, J; MARES, J. J.Journal of thermal analysis and calorimetry. 2007, Vol 88, Num 3, pp 763-768, issn 1388-6150, 6 p.Conference Paper

Model of inactive nitrogen incorporation in amorphous silicon: nitridated vacancyMASEK, J; MARES, J. J.Physica status solidi. B. Basic research. 1986, Vol 135, Num 1, pp K33-K38, issn 0370-1972Article

Weak localization - : Precursor of unconventional superconductivity in nanocrystalline boron-doped diamondMARES, J. J; HUBIK, P; NESLADEK, M et al.Diamond and related materials. 2006, Vol 15, Num 11-12, pp 1863-1867, issn 0925-9635, 5 p.Conference Paper

On the stability of single δ-layer in GaAsMARES, J. J; OSWALD, J; KRISTOFIK, J et al.Solid state communications. 1994, Vol 89, Num 11, pp 925-928, issn 0038-1098Article

Analysis of experimental data on DX centres in GaAs_1-xP_x:SZEMAN, J; SMID, V; KRISTOFIK, J et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 1, pp 49-67, issn 0958-6644Article

Transport mechanisms in GaAlAs-based laser structuresHUBIK, P; SMID, V; KRISTOFIK, J et al.Semiconductor science and technology. 1991, Vol 6, Num 4, pp 261-267, issn 0268-1242, 7 p.Article

Photo-conductivity and Hall mobility of holes at polypyrrole―diamond interfaceCERMAK, J; REZEK, B; HUBIK, P et al.Diamond and related materials. 2010, Vol 19, Num 2-3, pp 174-177, issn 0925-9635, 4 p.Conference Paper

Do periodic chemical reactions reveal Fürth's quantum diffusion limit?MARES, J. J; SESTAK, J; STAVEK, J et al.Physica. E, low-dimentional systems and nanostructures. 2005, Vol 29, Num 1-2, pp 145-149, issn 1386-9477, 5 p.Conference Paper

Bernoulli potential in type-I and weak type-II superconductors: II.Surface dipoleLIPAVSKY, P; MORAWETZ, K; KOLACEK, J et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 10, pp 104518.1-104518.7, issn 1098-0121Article

DX center in GaAsPZEMAN, J; HUBIK, P; KRISTOFIK, J et al.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum. 1995, Vol 119-20, pp 175-186, issn 1012-0386Article

Surface conductance in semi-insulating GaAsMARES, J. J; KRISTOFIK, J; SMID, V et al.Semiconductor science and technology. 1992, Vol 7, Num 1, pp 119-124, issn 0268-1242Article

Transport properties of hydrogen-terminated nanocrystalline diamond filmsHUBIK, P; MARES, J. J; KOZAK, H et al.Diamond and related materials. 2012, Vol 24, pp 63-68, issn 0925-9635, 6 p.Article

Dynamical behaviour of the δ-doped Au/GaAs Schottky barrierHUBIK, P; DOZSA, L; LIPAVSKY, P et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 61-66, issn 0031-8965, 6 p.Conference Paper

Deep donors in tellurium and sulphur codoped GaSbHUBIK, P; MARES, J. J; KRISTOFIK, J et al.Semiconductor science and technology. 1996, Vol 11, Num 7, pp 989-995, issn 0268-1242Article

Electrical properties of Mn-doped GaSbMARES, J. J; HUBIK, P; KRISTOFIK, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 134-137, issn 0921-5107Conference Paper

Magnetotransport in planar doping structuresXIAO-MEI FENG; MARES, J. J; RAIKH, M. E et al.Surface science. 1992, Vol 263, Num 1-3, pp 147-151, issn 0039-6028Conference Paper

On the d.c. conductivity in semi-insulating GaAsMARES, J. J; KRISTOFIK, J; SMID, V et al.Solid state communications. 1986, Vol 60, Num 3, pp 275-276, issn 0038-1098Article

Short-pulsed alloying of contacts on GaAsMARES, J. J; SMID, V; KRISTOFIK, J et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp K105-K107, issn 0031-8965Article

Relativistic transformation of temperature and Mosengeil-Ott's antinomyMARES, J. J; HUBIK, P; SESTAK, J et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 3, pp 484-487, issn 1386-9477, 4 p.Conference Paper

Lateral conductivity in GaAs/InAs quantum dot structuresDOZSA, L; TOTH, A. L; HORVATH, Zs. J et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 93-95, issn 1286-0042, 3 p.Conference Paper

Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs: Glide phenomenon in the GaSb bowlSTEPANEK, B; SESTAK, J; MARES, J. J et al.Journal of thermal analysis and calorimetry. 2003, Vol 72, Num 1, pp 165-172, issn 1388-6150, 8 p.Conference Paper

Mutual interdependence of partitions functions in vicinity T_gof transitionHLAVACEK, B; SESTAK, J; MARES, J. J et al.Journal of thermal analysis and calorimetry. 2002, Vol 67, Num 1, pp 239-248, issn 1388-6150Article

On the development of the temperature conceptMARES, J. J.Journal of thermal analysis and calorimetry. 2000, Vol 60, Num 3, pp 1081-1091, issn 1388-6150Article

Decrease in free carrier concentration in GaSb crystals using an ionized hydrogen atmosphereSESTAKOVA, V; STEPANEK, B; MARES, J. J et al.Materials chemistry and physics. 1996, Vol 45, Num 1, pp 39-42, issn 0254-0584Article