MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACESMARGARITONDO G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 499-513; BIBL. 84 REF.Article

NEAREST-NEIGHBOR BACKSCATTERING EFFECTS IN ANGLE-INTEGRATED PHOTOEMISSION SPECTROSCOPY OF CORE LEVELSMARGARITONDO G; STOFFEL NG.1979; PHYS. REV. LETTERS; USA; DA. 1979; VOL. 42; NO 23; PP. 1567-1570; BIBL. 19 REF.Article

EMPIRICAL RULE TO PREDICT HETEROJUNCTION BAND DISCONTINUITIESKATNANI AD; MARGARITONDO G.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2522-2525; BIBL. 32 REF.Article

Experimental tests of the dielectric electronegativity approach to the problem of heterojunction band discontinuitiesMARGARITONDO, G.Superlattices and microstructures. 1986, Vol 2, Num 2, pp 173-174, issn 0749-6036Article

GIANT CORE-EXCITON EFFECTS ON SI(111)7 X 7 SURFACES.MARGARITONDO G; ROWE JE.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 59; NO 6; PP. 464-466; BIBL. 25 REF.Article

Explaining the physics of tsunamis to undergraduate and non-physics studentsMARGARITONDO, G.European journal of physics. 2005, Vol 26, Num 3, pp 401-407, issn 0143-0807, 7 p.Article

Characterization of semiconductor interfaces with synchrotron radiationMARGARITONDO, G.Superlattices and microstructures. 1987, Vol 3, Num 4, pp 341-345, issn 0749-6036Article

Controlling heterojunction band discontinuities: a surface physicist's approachMARGARITONDO, G.Solid-state electronics. 1986, Vol 29, Num 2, pp 123-132, issn 0038-1101Article

COMPACT ANALYZER AND GONIOMETER FOR ANGLE-RESOLVED ELECTRON SPECTROSCOPYSTOFFEL NG; MARGARITONDO G.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 1; PP. 18-21; BIBL. 6 REF.Article

INTERFACE MORPHOLOGY STUDIED BY ANGLE-RESOLVED SOFT-X-RAY PHOTOEMISSION: AI ISLANDS ON GAAS (110)STOFFEL NG; KELLY MK; MARGARITONDO G et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6561-6563; BIBL. 12 REF.Article

ATOMIC MODULATION OF INTERDIFFUSION AT AU-GAAS INTERFACES = MODULATION ATOMIQUE DE L'INTERDIFFUSION AUX INTERFACES AU-GAASBRILLSON LJ; MARGARITONDO G; STOFFEL NG et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 10; PP. 667-670; BIBL. 12 REF.Article

DOUBLE INJECTION IN SEMICONDUCTORS.MIGLIORATO P; MARGARITONDO G; PERFETTI P et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 656-663; BIBL. 21 REF.Article

SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7 X 7. PHOTOEMISSION STUDIES OF FILLED SURFACE STATES AND BAND BENDING.MARGARITONDO G; ROWE JE; CHRISTMAN SB et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 12; PP. 5396-5403; BIBL. 37 REF.Article

ELECTRONIC STATES OF CDIN₂SE₄ AND ZNIN₂SE₄: ROLE OF THE CATION PSEUDOVACANCIESMARGARITONDO G; KATNANI AD; LEVY F et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 725-731; ABS. GER; BIBL. 12 REF.Article

SECONDARY ILLUMINATION EFFECTS IN THE PHOTOEMISSION SPECTRA OF GAAS AND CDSMARGARITONDO G; BRILLSON LJ; STOFFEL NG et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 3; PP. 277-280; BIBL. 15 REF.Article

ELECTRON ENERGY LOSS SPECTROSCOPY OF THE SI (111)-SIMPLE-METAL INTERFACE.ROWE JE; MARGARITONDO G; CHRISTMAN SB et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 4; PP. 2195-2201; BIBL. 23 REF.Article

CONDUCTION AND VALENCE BAND STATES IN ZNIN₂S₄: A PHOTOEMISSION STUDY WITH SYNCHROTRON RADIATIONMARGARITONDO G; STOFFEL NG; LEVY F et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 2; PP. 277-281; BIBL. 7 REF.Article

CHEMICAL BONDS AN ELECTRONIC STATES IN ANTIMONY TRIIODIDEMARGARITONDO G; STOFFEL NG; LEVY F et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 11; PP. 797-799; BIBL. 12 REF.Article

PHOTON POLARISATION EFFECTS IN ANGLE-INTEGRATED PHOTOEMISSION SPECTROSCOPY. A SIMPLE EXPERIMENTAL GEOMETRYMARGARITONDO G; WEAVER JH; STOFFEL NG et al.1979; J. PHYS. E; GBR; DA. 1979; VOL. 12; NO 7; PP. 662-664; BIBL. 6 REF.Article

METAL INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS.ROWE JE; CHRISTMAN SB; MARGARITONDO G et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 35; NO 1; PP. 1471-1475; BIBL. 19 REF.Article

ELECTROLUMINESCENT AU-GAP DIODESMARGARITONDO G; MIGLIORATO P; PERFETTI P et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 523-527; BIBL. 18 REF.Serial Issue

CHANGES IN THE LOCAL CHEMICAL COMPOSITION DURING THE HG_1-XCD_XTE-AL INTERFACE FORMATIONDANIELS RR; MARGARITONDO G; DAVIS GD et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 50-52; BIBL. 9 REF.Article

CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATIONBRILLSON LJ; BRUCKER CF; KATNANI AD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 784-786; BIBL. 12 REF.Article

CONDUCTION AND VALENCE BAND DENSITY OF STATES OF SNS₂: THEORY AND EXPERIMENT.MARGARITONDO G; ROWE JE; SCHLUTER M et al.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 12; PP. 753-757; BIBL. 11 REF.Article

EXCITONIC SHIFTS OF QUASIATOMIC OPTICAL CORE TO CONDUCTION-BAND TRANSITIONS IN PBI₂ AND BII₃.MARGARITONDO G; ROWE JE; SCHLUTER M et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2938-2952; BIBL. 15 REF.Article