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Space-charge photomodulation in metal/insulator/ amorphous semiconductor structuresFORTUNATO, G; MARIUCCI, L; REITA, C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 12, pp 2825-2828, issn 0018-9383Article

Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistor instabilityFORTUNATO, G; MARIUCCI, L; REITA, C et al.Applied physics letters. 1991, Vol 59, Num 7, pp 826-828, issn 0003-6951Article

Hot-carrier-induced degradation of LDD polysilicon TFTsVALLETTA, A; MARIUCCI, L; FORTUNATE, G et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 1, pp 43-50, issn 0018-9383, 8 p.Article

Theoretical analysis of a-Si : H based multilayer structure thin film transistorsREITA, C; MARIUCCI, L; FORTUNATO, G et al.Japanese journal of applied physics. 1990, Vol 29, Num 9, pp 1634-1638, issn 0021-4922, 1Article

Properties of amorphous Si:H films prepared by dual ion beam sputteringRUDOLF, P; COLUZZA, C; MARIUCCI, L et al.Physica scripta (Print). 1988, Vol 37, Num 5, pp 828-830, issn 0031-8949Article

Effects of tunneling on a-Si:H Schottky barriersMARIUCCI, L; GISLON, P; COLUZZA, C et al.Journal of applied physics. 1987, Vol 62, Num 8, pp 3285-3287, issn 0021-8979Article

Il protocollo di gennaio (Tira patto sociale e nuovi conflitti. Le larghe maglie dell'intesa. Più ombre che luci. Tra cronaca e storia). (Le protocole de janvier (Du pacte social aux nouveaux conflits. Une entente floue. Plus d'ombres que de lumières. De la chronique à l'histoire))MARIUCCI, L; TREU, T; GHEZZI, G et al.Politica del Diritto Bologna. 1983, Num 2, pp 187-224Article

Channel doping effects in poly-Si thin film transistorsVALLETTA, A; MARIUCCI, L; BONFIGLIETTI, A et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 242-246, issn 0040-6090, 5 p.Conference Paper

Short channel effects in polysilicon thin film transistorsFORTUNATO, G; VALLETTA, A; GAUCCI, P et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 221-226, issn 0040-6090, 6 p.Conference Paper

A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTsVALLETTA, A; MARIUCCI, L; PECORA, A et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 117-122, issn 0040-6090, 6 p.Conference Paper

Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Instability in hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistors : evidence for a predominant effect of charge trapping into the gate insulatorMARIUCCI, L; FORTUNATO, G; PUGLIA, C et al.Philosophical magazine letters. 1992, Vol 65, Num 4, pp 177-182, issn 0950-0839Article

Flessibilita lavoro, impresa : modelli normativi, strategie di mercato e qualità del lavoro. Travail flexible, entreprise : modèles normatifs, stratégies de marché et qualité du travailBIANCHI, P; MARIUCCI, L; REBECCHI, E et al.Sociologia del Lavoro. 1989, Num 38-39, pp 11-397Article

Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTsGAUCCI, P; VALLETTA, A; MARIUCCI, L et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 3, pp 573-577, issn 0018-9383, 5 p.Article

Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistorsCUSCUNA, M; STRACCI, G; BONFIGLIETTI, A et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1723-1727, issn 0022-3093, 5 p.Conference Paper

Lateral growth control by thickness spatial modulation of amorphous silicon filmPECORA, A; MARIUCCI, L; PIPERNO, S et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 314-318, issn 0040-6090, 5 p.Conference Paper

Observation of super lateral growth in long pulse (170 ns) excimer laser crystallization of a-Si filmsPECORA, A; CARLUCCIO, R; MARIUCCI, L et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 319-323, issn 0040-6090, 5 p.Conference Paper

Two-dimensional study of laterally confined ultra-shallow junctionsMARIUCCI, L; STANIZZI, M; FORTUNATO, G et al.euspen : european society for precision engineering and nanotechnology. International conference. 2001, pp 98-101, 2VolConference Paper

Hot carrier effects in polycrystalline silicon thin-film transistors : analysis of electrical characteristics and noise performance modificationsMARIUCCI, L; PECORA, A; GIOVANNINI, S et al.Microelectronics and reliability. 1999, Vol 39, Num 1, pp 45-52, issn 0026-2714Article

application of the photo discharge technique for the investigation of a-Si:H thin-film transistor instabilityFORTUNATO, G; CARLUCCIO, R; MARIUCCI, L et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 735-738, issn 0022-3093, 2Conference Paper

Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source―drain contactsMARIUCCI, L; RAPISARDA, M; VALLETTA, A et al.Organic electronics (Print). 2013, Vol 14, Num 1, pp 86-93, issn 1566-1199, 8 p.Article

Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edgesRAPISARDA, M; MARIUCCI, L; VALLETTA, A et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 406-411, issn 0038-1101, 6 p.Conference Paper

Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plasticPECORA, A; MAIOLO, L; CUSCUNA, M et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 348-352, issn 0038-1101, 5 p.Conference Paper

Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistorsVALLETTA, A; GAUCCI, P; MARIUCCI, L et al.Thin solid films. 2007, Vol 515, Num 19, pp 7417-7421, issn 0040-6090, 5 p.Conference Paper

SuMBE based organic thin film transistorsDE ANGELIS, F; TOCCOLI, T; PALLAORO, A et al.Synthetic metals. 2004, Vol 146, Num 3, pp 291-295, issn 0379-6779, 5 p.Conference Paper

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