Space-charge photomodulation in metal/insulator/ amorphous semiconductor structuresFORTUNATO, G; MARIUCCI, L; REITA, C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 12, pp 2825-2828, issn 0018-9383Article

Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistor instabilityFORTUNATO, G; MARIUCCI, L; REITA, C et al.Applied physics letters. 1991, Vol 59, Num 7, pp 826-828, issn 0003-6951Article

Hot-carrier-induced degradation of LDD polysilicon TFTsVALLETTA, A; MARIUCCI, L; FORTUNATE, G et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 1, pp 43-50, issn 0018-9383, 8 p.Article

Channel doping effects in poly-Si thin film transistorsVALLETTA, A; MARIUCCI, L; BONFIGLIETTI, A et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 242-246, issn 0040-6090, 5 p.Conference Paper

Short channel effects in polysilicon thin film transistorsFORTUNATO, G; VALLETTA, A; GAUCCI, P et al.Thin solid films. 2005, Vol 487, Num 1-2, pp 221-226, issn 0040-6090, 6 p.Conference Paper

A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTsVALLETTA, A; MARIUCCI, L; PECORA, A et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 117-122, issn 0040-6090, 6 p.Conference Paper

Excimer laser annealing: A solution for the future technology nodes ?PRIVITERA, V; LA MAGNA, A; MANNINO, G et al.Proceedings - Electrochemical Society. 2003, pp 137-143, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Instability in hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistors : evidence for a predominant effect of charge trapping into the gate insulatorMARIUCCI, L; FORTUNATO, G; PUGLIA, C et al.Philosophical magazine letters. 1992, Vol 65, Num 4, pp 177-182, issn 0950-0839Article

Flessibilita lavoro, impresa : modelli normativi, strategie di mercato e qualità del lavoro. Travail flexible, entreprise : modèles normatifs, stratégies de marché et qualité du travailBIANCHI, P; MARIUCCI, L; REBECCHI, E et al.Sociologia del Lavoro. 1989, Num 38-39, pp 11-397Article

Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTsGAUCCI, P; VALLETTA, A; MARIUCCI, L et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 3, pp 573-577, issn 0018-9383, 5 p.Article

Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistorsCUSCUNA, M; STRACCI, G; BONFIGLIETTI, A et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1723-1727, issn 0022-3093, 5 p.Conference Paper

Lateral growth control by thickness spatial modulation of amorphous silicon filmPECORA, A; MARIUCCI, L; PIPERNO, S et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 314-318, issn 0040-6090, 5 p.Conference Paper

Observation of super lateral growth in long pulse (170 ns) excimer laser crystallization of a-Si filmsPECORA, A; CARLUCCIO, R; MARIUCCI, L et al.Thin solid films. 2003, Vol 427, Num 1-2, pp 319-323, issn 0040-6090, 5 p.Conference Paper

Two-dimensional study of laterally confined ultra-shallow junctionsMARIUCCI, L; STANIZZI, M; FORTUNATO, G et al.euspen : european society for precision engineering and nanotechnology. International conference. 2001, pp 98-101, 2VolConference Paper

Hot carrier effects in polycrystalline silicon thin-film transistors : analysis of electrical characteristics and noise performance modificationsMARIUCCI, L; PECORA, A; GIOVANNINI, S et al.Microelectronics and reliability. 1999, Vol 39, Num 1, pp 45-52, issn 0026-2714Article

application of the photo discharge technique for the investigation of a-Si:H thin-film transistor instabilityFORTUNATO, G; CARLUCCIO, R; MARIUCCI, L et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 735-738, issn 0022-3093, 2Conference Paper

Edge Effects in Self-Heating-Related Instabilities in p-Channel Polycrystalline-Silicon Thin-Film TransistorsMARIUCCI, L; GAUCCI, P; VALLETTA, A et al.IEEE electron device letters. 2011, Vol 32, Num 12, pp 1707-1709, issn 0741-3106, 3 p.Article

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimideMAIOLO, L; CUSCUNA, M; MARIUCCI, L et al.Thin solid films. 2009, Vol 517, Num 23, pp 6371-6374, issn 0040-6090, 4 p.Conference Paper

Pentacene TFTs with parylene passivation layerSIMEONE, D; CIPOLLONI, S; MARIUCCI, L et al.Thin solid films. 2009, Vol 517, Num 23, pp 6283-6286, issn 0040-6090, 4 p.Conference Paper

Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layerMARIUCCI, L; SIMEONE, D; CIPOLLONI, S et al.Solid-state electronics. 2008, Vol 52, Num 3, pp 412-416, issn 0038-1101, 5 p.Conference Paper

Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applicationsCAMARCHIA, V; GUERRIERI, S. Donati; SERINO, A et al.International journal of RF and microwave computer-aided engineering. 2006, Vol 16, Num 1, pp 70-80, 11 p.Conference Paper

Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layerDE ANGELIS, F; MARIUCCI, L; CIPOLLONI, S et al.Journal of non-crystalline solids. 2006, Vol 352, Num 9-20, pp 1765-1768, issn 0022-3093, 4 p.Conference Paper

Excimer laser crystallization techniques for polysilicon TFTsFORTUNATO, G; MARIUCCI, L; CARLUCCIO, R et al.Applied surface science. 2000, Vol 154-55, pp 95-104, issn 0169-4332Conference Paper

Lateral growth control in excimer laser crystallized polysiliconMARIUCCI, L; CARLUCCIO, R; PECORA, A et al.Thin solid films. 1999, Vol 337, Num 1-2, pp 137-142, issn 0040-6090Conference Paper

Hot carrier effects in n-channel polycrystalline silicon thin-film transistors : a correlation between off-current and transconductance variationsFORTUNATO, G; PECORA, A; TALLARIDA, G et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 3, pp 340-346, issn 0018-9383Article