THIN FILM HETEROJUNCTIONS FOR TERRESTRIAL SOLAR CELLS.MARTINUZZI S.1976; IN: HELIOTECH. DEV. INT. CONF. PROC.; DHAHRAN, SAUDI ARABIA; 1975; CAMBRIDGE, MASS.; DEVELOPMENT ANALYSIS ASSOC.; DA. 1976; VOL. 1; PP. 588-607; BIBL. 17 REF.Conference Paper

TRENDS AND PROBLEMS IN CDS/CU_XS THIN FILM SOLAR CELLS: A REVIEWMARTINUZZI S.1982; SOL. CELLS; ISSN 0379-6787; CHE; DA. 1982; VOL. 5; NO 3; PP. 243-268; BIBL. 67 REF.Article

PHOTOPILES SOLAIRES A HETEROJONCTION N-CDS-P-CDTE. = N-CDS-P-CDTE HETEROJUNCTION SOLAR PHOTOCELLSMARTINUZZI S.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. K21-K26; BIBL. 6 REF.Article

Research on high efficiency polycristalline silicon solar cells. The program of C.N.R.S.-P.I.R.S.E.M. ― FranceMARTINUZZI, S.EC photovoltaic solar conference. 8. 1988, pp 1176-1180Conference Paper

SPECTRAL DEPENDENCE OF PHOTOCURRENT FOR CU₂S-CDS SOLAR CELLSMARTINUZZI S; SARTI D.1978; J. PHYS., LETTERS; FRA; DA. 1978; VOL. 39; NO 21; PP. L403-L406; ABS. FRE; BIBL. 13 REF.Article

SUR LA DEGRADATION DE PHOTOPILES SOLAIRES EN COUCHES DE CDS-CU_XSMARTINUZZI S; CABANE BROUTY F; BRETZNER JF et al.1973; COOPERATION MEDITERR. ENERG. SOLAIRE; FR.; DA. 1973; PP. 24-27; ABS. ANGL. FR.; BIBL. 3 REF.Serial Issue

EFFECTS OF H₂ ADSORPTION ON THE ELECTRICAL PROPERTIES OF CDS THIN FILMSCHANDRASEKHAR S; BOUCHIKHI B; MARTINUZZI S et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 84; NO 1; PP. L181-L184; BIBL. 10 REF.Conference Paper

INFLUENCE OF PREPARATION CONDITIONS ON ELECTRON TRAPPING IN CDS POLYCRYSTALLINE LAYERSSORBIER JP; OUALID J; MARTINUZZI S et al.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 12; PP. 2323-2332; BIBL. 13 REF.Article

DARK CURRENTS IN CU₂S-CDS SINGLE CRYSTAL HETEROJUNCTIONS. CONSEQUENCES FOR PHOTOCELLS.MARTINUZZI S; MALLEM O; CABOT T et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 1; PP. 227-234; ABS. FR.; BIBL. 19 REF.Article

Effet getter dans les plaquettes de silicum multicristallin par diffusion de phosphore = Gettering effect in multicrystalline silicon wafers by phosphorus diffusionPERICHAUD, I; MARTINUZZI, S.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1992, Vol 2, Num 3, pp 313-324Article

CARACTERISATION DES NIVEAUX PIEGES DANS LES JONCTIONS GRADUELLES P⁺NSI TRES DOPEES AU OU PTOUALID J; GERVAIS J; JERISIAN R et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 1; PP. 25-31; ABS. ENG; BIBL. 22 REF.Article

PHOTOPILES SOLAIRES AU CU₂-S-CDS "SPRAY"MARTINUZZI S; OUALID J; CABANE BROUTY F et al.1979; REV. PHYS. APPL.; FRA; DA. 1979; VOL. 14; NO 1; PP. 237-243; ABS. ENG; BIBL. 16 REF.Article

Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. I: ModelEL GHITANI, H; MARTINUZZI, S.Journal of applied physics. 1989, Vol 66, Num 4, pp 1717-1722, issn 0021-8979, 6 p.Article

PHOTODETECTION PROPERTIES OF CU₂S-CDS HETEROJUNCTION SOLAR CELLSMARTINUZZI S; SARTI D; VASSILEVSKI D et al.1980; SOL. CELLS; CHE; DA. 1980; VOL. 2; NO 2; PP. 173-184; BIBL. 25 REF.Article

CDZNS-CDS BIFILM SOLAR PHOTOCELLSMARTINUZZI S; OUALID J; SARTI D et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 2; PP. 211-217; BIBL. 14 REF.Article

Influence of hydrogen implantation on properties of n⁺ p polycrystalline silicon solar cellsAMMOR, L; MARTINUZZI, S.Solid-state electronics. 1986, Vol 29, Num 1, pp 1-6, issn 0038-1101Article

PHYSICAL PROPERTIES OF CD_1-XZN_XS THIN FILMS PREPARED BY THERMAL EVAPORATION OF THE SOLID SOLUTIONDOMENS P; CADENE M; SOLAL GWC et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. 201-210; ABS. FRE; BIBL. 24 REF.Article

CHARACTERISATION OF ELECTRON TRAPS IN CU₂S-CDS POLYCRYSTALLINE CELLS BY CAPACITANCE TRANSIENT MEASUREMENTSOUALID J; SARTI D; GERVAIS J et al.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 12; PP. 2313-2321; BIBL. 36 REF.Article

Detection and characterization of precipitates in annealed Cz silicon wafersVEVE, C; GAY, N; STEMMER, M et al.Journal de physique. III (Print). 1995, Vol 5, Num 9, pp 1353-1363, issn 1155-4320Conference Paper

Origine des centres recombinants aux joints de grains de bicristaux de silicium Σ=13 = Origin of recombination centers at grains boundaries of Σ=13 silicon bicrystalsAMANRICH, H; PASQUINELLI, M; MARTINUZZI, S et al.Revue de physique appliquée. 1990, Vol 25, Num 11, pp 1121-1128, issn 0035-1687, 8 p.Article

Compensation of p-type cast polycrystalline silicon by hydrogen ion implantation at 300°CMARTINUZZI, S; SEBBAR, M. A; GERVAIS, J et al.Applied physics letters. 1985, Vol 47, Num 4, pp 376-378, issn 0003-6951Article

Réalisation d'instruments automatisés de révélation et de caractérisation locale de défauts dans du silicium = Realisation of automatic instruments for defect recognition and local characterisation in semiconductor siliconStemmer, Michael; Martinuzzi, S.1994, 149 p.Thesis

n-Type Multicrystalline Silicon Wafers Prepared from Plasma Torch Refined Upgraded Metallurgical FeedstockMARTINUZZI, S; PERICHAUD, I; TRASSY, C et al.Progress in photovoltaics (Print). 2009, Vol 17, Num 5, pp 297-305, issn 1062-7995, 9 p.Article

Contactless mapping of lifetime and diffusion length scan map of minority carriers in silicon wafersPALAIS, O; GERVAIS, J; YAKIMOV, E et al.EPJ. Applied physics (Print). 2000, Vol 10, Num 2, pp 157-162, issn 1286-0042Article

CD_1-YZN_YS-CU_XS THIN FILM SOLAR CELL WITH IMPROVED TERNARY COMPOUND LAYERZAPIAN NATAREN F; BOUCHIKHI B; CHANDRASEKHAR S et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 59; NO 1-2; PP. 409-413; BIBL. 9 REF.Conference Paper