Visible electroluminescence from porous silicon np heterojunction diodesFEREYDOON NAMAVAR; MARUSKA, H. P; KALKHORAN, N. M et al.Applied physics letters. 1992, Vol 60, Num 20, pp 2514-2516, issn 0003-6951Article

Porous-silicon flat-panel displaysKALKHORAN, N. M; FEREYDOON NAMAVAR; MARUSKA, H. P et al.Journal of the Society for Information Display. 1995, Vol 3, Num 1, pp 3-8, issn 1071-0922Article

The role of polar species in the aggregation of asphaltenesMARUSKA, H. P; RAO, B. M. L.Fuel science & technology international. 1987, Vol 5, Num 2, pp 119-168, issn 0884-3759Article

Technique for extracting dielectric permittivity from data obscured by electrode polarizationMARUSKA, H. P; STEVENS, J. G.IEEE transactions on electrical insulation. 1988, Vol 23, Num 2, pp 197-200, issn 0018-9367Article

Effects of power and hydrogen in the discharge on the photovoltaic properties of sputtered amorphous siliconMOUSTAKAS, T. D; MARUSKA, H. P.Applied physics letters. 1983, Vol 43, Num 11, pp 1037-1039, issn 0003-6951Article

Energy bands in quantum confined silicon light-emitting diodesMARUSKA, H. P; NAMAVAR, F; KALKHORAN, N. M et al.Applied physics letters. 1993, Vol 63, Num 1, pp 45-47, issn 0003-6951Article

Dielectric spectroscopy as a probe of molecular aggregation in heavy oilMARUSKA, H. P; RAO, B. M. L; ENARD, J et al.Preprints - American Chemical Society. Division of Petroleum Chemistry. 1986, Vol 31, Num 3-4, pp 673-675, issn 0569-3799Article

Effects of interfacial charge on the electron affinity, work function, and electrical characteristics of thinly oxidized semiconductor-insulator-semiconductor and metal-insulator-semiconductor devicesGHOSH, A. K; FENG, T; HABERMAN, J. I et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 2990-2994, issn 0021-8979Article

Optically controlled amorphous silicon photosensitive deviceMARUSKA, H. P; HICKS, M. C; MOUSTAKAS, T. D et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1343-1344, issn 0018-9383Article

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1 0 0) and (0 0 0 1) GaNBHATTACHARYYA, A; FRIEL, I; HILL, D. W et al.Journal of crystal growth. 2003, Vol 251, Num 1-4, pp 487-493, issn 0022-0248, 7 p.Conference Paper