A study of the mechanism of the reaction of trimethylgallium with hydrogen selenideMAUNG, N; GUANGHAN FAN; NG, T.-L et al.Journal of material chemistry. 1999, Vol 9, Num 10, pp 2489-2494, issn 0959-9428Article

Growth process studies by reflectance anisotropy spectroscopy on MOVPE ZnSeGNOTH, D. N; POOLE, I. B; NG, T. L et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 198-202, issn 0022-0248Conference Paper

Thermal decomposition of di-tertiarybutyl selenide and dimethylzinc in a metalorganic vapour phase epitaxy reactorFAN, G. H; MAUNG, N; NG, T. L et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 485-490, issn 0022-0248Conference Paper

MOCVD growth of Ga₂Se₃ on GaAs(100) and GaP(100) : a Raman studyVON DER EMDE, M; ZAHN, D. R. T; NG, T et al.Applied surface science. 1996, Vol 104-05, pp 575-579, issn 0169-4332Conference Paper

Experimental evaluations of RSS threshold-based optimised DV-HOP localisation for wireless ad-hoc networksMAUNG, N. A. M; KAWAI, M.Electronics letters. 2014, Vol 50, Num 17, pp 1246-1248, issn 0013-5194, 3 p.Article

Studies of the thermal and photochemical decomposition mechanisms of Bu^t₂Se in the presence or absence of Me₂Zn using deuterium labelled analoguesPICKETT, N. L; FOSTER, D. F; MAUNG, N et al.Journal of material chemistry. 1999, Vol 9, Num 12, pp 3005-3014, issn 0959-9428Article

MOVPE growth of magnesium cadmium sulphide : rocksalt or sphalerite ?POOLE, I. B; NG, T. L; MAUNG, N et al.Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 528-532, issn 0022-0248Conference Paper

Metal-organic vapor phase epitaxial growth of cubic gallium selenide, Ga₂Se₃TAT LIN NG; MAUNG, N; FAN, G et al.Advanced materials (Weinheim). 1996, Vol 8, Num 9, pp 185-189, issn 0935-9648Article

Mass-spectrometric study of the pyrolysis reactions in the MOVPE of Ga₂Se₃ by in-situ gas samplingMAUNG, N; FAN, G. H; NG, T. L et al.Journal of crystal growth. 1996, Vol 158, Num 1-2, pp 68-78, issn 0022-0248Article

The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layersCARR, N; WOOD, A. K; THOMPSON, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 355-360Conference Paper

Magnetic-field-induced destabilisation of excitons bound at neutral donors in epitaxial Zn_1-xMn_xSeGREGORY, T. J; NICHOLLS, J. E; DAVIES, J. J et al.Semiconductor science and technology. 1988, Vol 3, Num 12, pp 1193-1195, issn 0268-1242Article

The influence of the substrate on the growth of carbon nanotubes from nickel clusters: an investigation using STM, FE-SEM, TEM and Raman spectroscopyWRIGHT, A. C; XIONG, Y; MAUNG, N et al.Materials science & engineering C. Biomimetic and supramolecular systems. 2003, Vol 23, Num 1-2, pp 279-283, 5 p.Conference Paper

Dynamic vapour pressure measurements of di-tertiarybutyl sulphide using an ultrasonic monitorSTOCKTON, L. D; NG, T. L; MAUNG, N et al.Journal of crystal growth. 1998, Vol 183, Num 1-2, pp 95-98, issn 0022-0248Article

Thin films of CdTe/CdS grown by MOCVD for photovoltaicsBERRIGAN, R. A; MAUNG, N; IRVINE, S. J. C et al.Journal of crystal growth. 1998, Vol 195, Num 1-4, pp 718-724, issn 0022-0248Conference Paper

Selective area MOVPE growth for device integrationTHOMPSON, J; CARR, N; WOOD, A. K et al.Journal of crystal growth. 1993, Vol 126, Num 2-3, pp 317-324, issn 0022-0248Article

The use of Inp-P-based semiconductor reflective stacks for enhanced device performanceTHOMPSON, J; WOOD, A. K; MOSELEY, A. J et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 860-866, issn 0022-0248Conference Paper

Electrical and photo-luminescence properties of ZnSe epitaxial layers grown on GaAs (100) by atmospheric pressure MOVPE: the role of substrate temperatureFAN, G; DAVIES, J. I; MAUNG, N et al.Journal of electronic materials. 1986, Vol 15, Num 4, pp 251-255, issn 0361-5235Article

Blue electroluminescence from ZnSe/Langmuir-Blodgett film mis diodesHUA, Y. L; PETTY, M. C; ROBERTS, G. G et al.Electronics Letters. 1987, Vol 23, Num 5, pp 231-232, issn 0013-5194Article

Interpreting Crime statisticsWALKER, M.A; BOTTOMLEY, K; AYE MAUNG, N et al.1995, 227 p., isbn 0-19-852306-8Book