au.\*:("MCNUTT MJ")
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TIME DEPENDENCE OF THE CHARGE EQUILIBRATION (FILL-AND-SPILL) INPUT TECHNIQUE FOR PROFILED PERISTALTIC CHARGE-TRANSFER DEVICESMCNUTT MJ.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 530-536; BIBL. 7 REF.Article
DIFFERENTIAL EQUATION SOLUTIONS OF MOS TRANSMISSION LINE MODELS GENERALIZED TO LOSSY CASESMCNUTT MJ; HOLTKAMP JM.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 9; PP. 1145-1148; BIBL. 11 REF.Article
EXPERIMENTAL OBSERVATIONS OF THE EFFECTS OF OXIDE CHARGE INHOMOGENEITY ON FAST SURFACE STATE DENSITY FROM HIGH-FREQUENCY MOS CAPACITANCE-VOLTAGE CHARACTERISTICS.MCNUTT MJ; SAH CT.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 378-380; BIBL. 9 REF.Article
EFFECTS OF SPATIALLY INHOMOGENEOUS OXIDE CHARGE DISTRIBUTION ON THE MOS CAPACITANCE-VOLTAGE CHARACTERISTICS.MCNUTT MJ; SAH CT.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3916-3921; BIBL. 13 REF.Article
EXACT CAPACITANCE OF A LOSSLESS MOS CAPACITOR.MCNUTT MJ; SAH CT.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 255-257; BIBL. 14 REF.Article
HIGH FREQUENCY SPACE CHARGE LAYER CAPACITANCE OF STRONGLY INVERTED SEMICONDUCTOR SURFACES.MCNUTT MJ; SAH CT.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 4; PP. 377-385; BIBL. 19 REF.Article
COMMENTS ON "EFFECTS OF SPATIALLY INHOMOGENEOUS OXIDE CHARGE DISTRIBUTION ON THE MOS CAPACITANCE-VOLTAGE CHARACTERISTICS".MCNUTT MJ; SAH CT; VAN OVERSTRAETEN R et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 5057; BIBL. 3 REF.Article