STUDY OF GAP STATES IN A-SI:H BY TRANSIENT CURRENT SPECTROSCOPYBEICHLER J; MELL H.1982; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 4/1982/STRESA; NLD/USA/GBR; DORDRECHT; BOSTON; LONDON: D. REIDEL PUBLISHING COMPANY; DA. 1982; PP. 537-541; BIBL. 17 REF.Conference Paper

INFLUENCE OF BORON DOPING ON THE TRANSPORT PROPERTIES OF A-SI:H FILMSBEYER W; MELL H.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 10; PP. 891-894; BIBL. 16 REF.Article

CHARAKTERISIERUNG VON SCHOTTKYDIODEN AUF DER BASIS VON AMORPHEM SILIZIUM = CHARACTERIZATION OF SCHOTTKY'S DIODES BASED ON AMORPHOUS SILICON = CARACTERISATION DE DIODES SCHOTTKY A BASE DE SILICIUM AMORPHEFUHS W; MELL H.1980; SONNENENERGIE. SEMINAR/1980/HAMBURG; DEU; DUESSELDORF: VEREIN DEUTSCHER INGENIEURE; DA. 1980; VOL. 2; PP. 931-941; BIBL. 9 REF.Conference Paper

MASS SPECTROMETRIC ANALYSIS DURING THE VAPOR DEPOSITION OF AMORPHOUS SILICON.MELL H; BRODSKY MH.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 46; NO 3; PP. 299-305; BIBL. 17 REF.Article

EFFECT OF BORON-DOPING ON THE HYDROGEN EVOLUTION FROM A-SI: H FILMSBEYER W; WAGNER H; MELL H et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 2; PP. 375-379; BIBL. 19 REF.Article

CELL YIELDS OF VIBRIO SUCCINOGENES GROWING WITH FORMATE AND FUMARATE AS SOLE CARBON AND ENERGY SOURCES IN CHEMOSTAT CULTURE = RENDEMENT CELLULAIRE DE V.S. CULTIVE EN PRESENCE DE FORMIATE ET DE FUMARATE COMME SEULE SOURCE DE CARBONE ET D'ENERGIE EN CHEMOSTATMELL H; BRONDER M; KROGER A et al.1982; ARCH. MICROBIOL.; ISSN 0302-8933; DEU; DA. 1982; VOL. 131; NO 3; PP. 224-228; BIBL. 16 REF.Article

HALL EFFECT AND MAGNETORESISTANCE OF (SN)_X FILMSBEYER W; MELL H; GILL WD et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 2; PP. 185-189; BIBL. 17 REF.Article

MAGNETIC FIELD DEPENDENCE OF THE PHOTOCONDUCTIVITY IN AMORPHOUS SILICONMELL H; MOVAGHAR B; SCHWEITZER L et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 88; NO 2; PP. 531-535; ABS. GER; BIBL. 16 REF.Article

SCHOTTKY BARRIERS ON P-TYPE A-SI:HGREEB KH; FUHS W; MELL H et al.1982; SOL. ENERGY MATER.; ISSN 0165-1633; NLD; DA. 1982; VOL. 7; NO 2; PP. 253-261; BIBL. 20 REF.Article

Use of the steady-state photocarrier-grating technique for the study of the surface recombination velocity of photocarriers and the homogeneity of hydrogenated amorphous silicon filmsHARIDIM, M; WEISER, K; MELL, H et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1993, Vol 67, Num 2, pp 171-180, issn 0958-6644Article

On the mechanism of doping and defect formation in a-Si :HPIERZ, K; FUHS, W; MELL, H et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1991, Vol 63, Num 1, pp 123-141, issn 0958-6644, 19 p.Article

On the fermi-level position in a-Si:H(P)KAZANSKII, A. G; FUHS, W; MELL, H et al.Physica status solidi. B. Basic research. 1990, Vol 160, Num 1, pp K25-K28, issn 0370-1972Article

Study of instabilities in amorphous-silicon thin-film transistors by transient current spectroscopyNICKEL, N; FUHS, W; MELL, H et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 1, pp 280-284, issn 0018-9383, 5 p.Article

The valence band structure of a-Si_1-xC_x:H studied by x-ray emission spectroscopyZAHOROWSKI, W; WIECH, G; MELL, H et al.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 48, pp 9571-9580, issn 0953-8984Article

Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin filmsKHOMICH, A. V; KOVALEV, V. I; VEDENEEV, A. S et al.SPIE proceedings series. 2004, pp 200-207, isbn 0-8194-5324-2, 8 p.Conference Paper

Photoelectrical properties of microcrystalline silicon filmsFORSH, P. A; KAZANSKII, A. G; MELL, H et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 251-253, issn 0040-6090Conference Paper

Recombination at defects in amorphous silicon (a-Si:H)ULBER, I; SALEH, R; FUHS, W et al.Journal of non-crystalline solids. 1995, Vol 190, Num 1-2, pp 9-20, issn 0022-3093Article

Determination of surface recombination velocity of excess carriers in amorphous silicon using the SSPG techniqueHARIDIM, M; KURIN, E; WEISER, K et al.Journal of non-crystalline solids. 1992, Vol 141, Num 1-3, pp 119-122, issn 0022-3093Article

16S rRNA analysis and the phylogenetic position of Wolinella succinogenesSTACKEBRANDT, E; FOWLER, V; MELL, H et al.FEMS microbiology letters. 1987, Vol 40, Num 2-3, pp 269-272, issn 0378-1097Article

The electrochemical proton potential and the proton/electron ratio of the electron transport with fumarate in Wolinella succinogenesMELL, H; WELLNITZ, C; KRÖGER, A et al.Biochimica et biophysica acta. 1986, Vol 852, Num 2-3, pp 212-221, issn 0006-3002Article

Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporationKAZANSKII, A. G; MELL, H; WEISER, G et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 704-708, issn 0022-3093, aConference Paper

a-Si:H deposited at high rate on the cathode of a rf-PECVD reactorWILL, S; MELL, H; POSCHENRIEDER, M et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 29-33, issn 0022-3093, aConference Paper

Comparative study of light-induced photoconductivity decay in hydrogenated amorphous siliconBEYER, W; MELL, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 466-469, issn 0022-3093, 1Conference Paper

Electron and hole-spin densities in undoped illuminated a-Si:HSALEH, R; ULBER, I; FUHS, W et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 367-370, issn 0022-3093, 1Conference Paper

Bandgap fluctuations in compensated a-Si:H(P,B) filmsRATH, J. K; FUHS, W; MELL, H et al.Physica status solidi. B. Basic research. 1993, Vol 179, Num 1, pp 83-90, issn 0370-1972Article