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MEMORY ADDRESSING AND PROTECTION.1975; COMPUTER MONOGR.; NETHERL.; DA. 1975; VOL. 5; PP. 52-82Article

ASYMMETRIC MEMORY HIERARCHIESWILLIAMS JG.1973; COMMUNIC. A.C.M.; U.S.A.; DA. 1973; VOL. 16; NO 4; PP. 213-222; BIBL. 27 REF.Serial Issue

LIVING IN 64 K WORLDPRINCE B.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 6; PP. 775-778Article

SOME PARAMETERS AFFECTING THE PERFORMANCE OF PAGED STORAGE HIERACHIES.DOYLE MS; GRAHAM JW.1975; INFOR; CANADA; DA. 1975; VOL. 13; NO 2; PP. 197-207; ABS. FR.; BIBL. 12 REF.Article

EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article

ALLOCATION DE MEMOIRE OPERATIONNELLEBRODSKY J.1976; INFORM. SYST.; CESKOSL.; DA. 1976; VOL. 5; NO 1; PP. 65-79; ABS. RUSSE ANGL.; BIBL. 14 REF.Article

PRESENT STATE AND EVOLUTION OF MASS MEMORIES.ROGGE H.1974; ONDE ELECTR.; FR.; DA. 1974; VOL. 54; NO 6; PP. 273-276; ABS. FRArticle

METHODEN DER SPEICHERRAUMZUWEISUNG. = METHODES D'ALLOCATION MEMOIREMULLER D; HORN TM.1974; RECHENTECH. DATENVERARBEIT.; DTSCH.; DA. 1974; VOL. 11; NO 11; PP. 16-20; BIBL. 3 REF.Article

STATIC RAM'S WITH MICROWATT DATA RETENTION CAPABILITYDUMBRI AC; ROSENZWEIG W.1980; IEEE J. SOLID. STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 826-831; BIBL. 10 REF.Article

A NEW EAROM MEMORY CELL IMPLEMENTED BY DOUBLEGATE THICKNESS MNOST AND MICRORESISTOR LOADS.ANDREEVA AN.1978; C.R. ACAD. BULG. SCI.; BULG.; DA. 1978; VOL. 31; NO 1; PP. 31-33; BIBL. 4 REF.Article

FAST LOW-POWER MEMORY DEVICES USING ESFI MOS TECHNOLOGY.POMPER M; HORNINGER K; TIHANYI J et al.1974; ONDE ELECTR.; FR.; DA. 1974; VOL. 54; NO 4; PP. 187-191; ABS. FR.; BIBL. 13 REF.Article

A 100 NS 5 V ONLY 64 K X 1 MOS DYNAMIC RAMCHAN JY; BARNES JJ; WANG CY et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 839-846; BIBL. 11 REF.Article

FUTURE MEMORY SYSTEMS: ARCHITECTURE AND TECHNOLOGIES1971; IN: NORTHEAST ELECTRON. RES. ENG. MEET. BOSTON, MASS., 1971; NEWTON, MASS; I.E.E.E.; DA. 1971; VOL. 1; PP. 98-106; BIBL. DISSEM.Conference Proceedings

ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NONVOLATILE RAMWALLACE C.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 10; PP. 128-131Article

PRESENT AND FUTURE TRENCH OF DYNAMIC MOS MEMORIES = TENDANCES D'EVOLUTION ACTUELLE ET FUTURE DES MEMOIRES MOS DYNAMIQUESHOFFMANN K.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 115-119; BIBL. 17 REF.Article

ASPECTS OF MEMORY HIERARCHY CONCEPTS EXTENDED TO MICROCODE-STORE LEVELRAYMOND MLJ; PUCKNELL DA.1981; I.E.E. PROC., E; ISSN 0143-7062; GBR; DA. 1981; VOL. 128; NO 6; PP. 255-257; BIBL. 12 REF.Article

DESIGNER'S REFERENCE TO SEMICONDUCTOR MEMORIES: PROMS AND RAMS1980; ELECTRON. DESIGN; USA; DA. 1980; VOL. 28; NO 15; PP. 81-138; (34 P.)Article

THE RACE HEATS UP IN FAST STATIC RAMSCAPECE R.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 9; PP. 125-135Article

LES MEMOIRES DIFMOS, NON VOLATILES, EFFACABLES ET REPROGRAMMABLES ELECTRIQUEMENTDE MONTAIGNE J.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 267; PP. 36-39Article

EPROM HIGH-SPEED ERASING SCHEME.EMBERTY RG; MCNEIL JR; COLLINS GJ et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 2; PP. 159Article

THE SEMICONDUCTOR MEMORY REVOLUTION.1977; IN: ELECTRO CONF. REC.; NEW YORK; 1977; EL SEGUNDO, CALIF.; ELECTRO; DA. 1977; PP. (22P.); BIBL. DISSEM.Conference Paper

DEMAND PREPAGING ALGORITHMS BASING ON A MODEL OF LOCALITY OF PROGRAMS.SPANIOL O.1974; IN: COMPUT. ARCHIT. NETWORKS. MODELLING EVAL. PROC. INT. WORKSHOP; ROCQUENCOURT, FR.; 1974; AMSTERDAM; NORTH-HOLLAND PUBLISHING CO; DA. 1974; PP. 515-527; BIBL. 6 REF.Conference Paper

SEMICONDUCTOR MEMORIES 1976.WILCOCK JD.1977; NEW ELECTRON.; G.B.; DA. 1977; VOL. 10; NO 4; PP. 73-78 (4P.)Article

SEMICONDUCTOR MEMORY UPDATE: EEPROMS, ELECTRICALLY ERASABLE PROGRAMMABLE ROMS, COMBINING THE BEST FEATURES OF BOTH ULTRAVIOLET ERASABLE AND ELECTRICALLY ALTERABLE TYPES, ARE LIKELY TO BE THE REAL IMPETUS OF THE FUTUREHNATEK ER.1981; COMPUT. DES.; ISSN 0010-4566; USA; DA. 1981; VOL. 20; NO 12; PP. 137-144; 6 P.; BIBL. 2 REF.Article

E-PROM DOUBLES BIT DENSITY WITHOUT ADDING A PINGREENE B; LOUIE F.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 17; PP. 126-129Article

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