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A REVIEW OF RAM TESTING METHODOLOGICSCORSI A; MORANDI C.1983; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1983; VOL. 14; NO 2; PP. 55-71; BIBL. 29 REF.Article

MINIATURIZATION DEGREE OF DYNAMIC MOS RAM CELLS WITH READOUT SIGNAL GAINTSUCHIYA T; NAKAJIMA S.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1713-1717; BIBL. 6 REF.Article

ENHANCED-PERFORMANCE 4 K X 1 HIGH-SPEED SRAM USING OPTICALLY DEFINED SUBMICROMETER DEVICES IN SELECTED CIRCUITSCHATTERJEE PK; SHAH AH; YUNG TAO LIN et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 700-706; BIBL. 21 REF.Article

LIVING IN 64 K WORLDPRINCE B.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 6; PP. 775-778Article

AN MO GATE 4K STATIC MOS RAMISHIKAWA H; YAMAMOTO M; TOKUNAGA H et al.1980; IEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1586-1590; BIBL. 11 REF.Article

SINGLE 5-V, 64K RAM WITH SCALED-DOWN MOS STRUCTUREMASUDA H; HORI R; KAMIGAKI Y et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1607-1612; BIBL. 11 REF.Article

KEEP THE MEMORY INTERFACE SIMPLE BETWEEN DYNAMIC RAMS AND A MU P. USE THE RIGHT TIMING AND REFRESH, AND YOU WON'T HAVE TO TRADE OFF MUCH PERFORMANCE FOR COST.FIELLAND G; OISHI K.1978; ELECTRON. DESIGN; U.S.A.; DA. 1978; VOL. 26; NO 9; PP. 84-92Article

DYNAMIC MEMORIES OFFER ADVANTAGES.WINFIELD J.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 14; PP. 66-70; BIBL. 2 REF.Article

QUESTIONS RELATIVES A L'ORGANISATION DE L'ECHANGE D'INFORMATION AVEC DES MEMOIRES D'ACCES DIRECTGULESHA EA; LIDAK V YU; SPIRIDONOV VV et al.1976; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1976; VOL. 19; NO 2; PP. 69-72; BIBL. 3 REF.Article

SURFACE-ACOUSTIC-WAVE RANDOM-ACCESS MEMORIESMANES GF.1981; IEEE TRANS. SONICS ULTRASON.; ISSN 0018-9537; USA; DA. 1981; VOL. 28; NO 3; PP. 220-228; BIBL. 10 REF.Article

TRENDS BEI HOCHINTEGRIERTEN DYNAMISCHEN RAMSS = LES TENDANCES ACTUELLES DES MEMOIRES RAM A HAUTE INTEGRATIONPOSA JG.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 22; PP. 87-94; BIBL. 3 REF.Article

OSCILLOSCOPE DISPLAYS CONTENTS OF RAMS AND ROMS.BLACKBURN JA.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 1; PP. 117-119 (2P.)Article

OVERVIEW OF CCD MEMORY.TERMAN LM; HELLER LG.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 1; PP. 4-10; BIBL. 23 REF.Article

GRACE A L'IMPLANTATION IONIQUE ET A L'ELECTRON-LITHOGRAPHIE, IBM A REALISE UNE RAM DE 8 K BITS EN MOS AVEC ACCES EN 90 NS.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 214; PP. 7Article

BIPOLAR MEMORIES.ALFKE P.1974; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1974; VOL. 13; NO 5; PP. 339-343; (SEMINEX SEMIN.; LONDON; 1974)Conference Paper

DOUBLE LAYER POLYSILICON CELLS FOR HIGH DENSITY RAMSTAGUCHI M; NAKAMURA T.1981; FUJITSU SCI. TECH. J.; ISSN 0016-2523; JPN; DA. 1981; VOL. 17; NO 4; PP. 129-146; BIBL. 14 REF.Article

A 100 NS 5 V ONLY 64 K X 1 MOS DYNAMIC RAMCHAN JY; BARNES JJ; WANG CY et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 839-846; BIBL. 11 REF.Article

FOCUS ON SEMICONDUCTOR RAMS.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 17; PP. 56-62Article

LANGE DATENWORTE IN RAM MIT KLEINER WORTLAENGE GESPEICHERT = MOTS DE DONNEES LONGS DANS DES RAM AVEC STOCKAGE DE PETITES LONGUEURS DE MOTSDIRKS C.1973; ELEKTRONIK; DTSCH.; DA. 1973; VOL. 22; NO 6; PP. 219-220; BIBL. 1 REF.Serial Issue

A RADIATION HARDENED 256 X 4 BULK CMOS RAMNAPOLI LS; SMELTZER RK; DONNELLY R et al.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 3; PP. 458-463; BIBL. 4 REF.Article

MEMORY SYSTEMS. STANDARD RAM MODULES PROVIDE MEMORY EXPANSION FOR Q-BUS/MULTIBUS SYSTEMS1981; COMPUT. DES.; ISSN 0010-4566; USA; DA. 1981; VOL. 20; NO 9; PP. 120-122; 2 P.Article

EINSATZ VON DYNAMISCHEN RAMS IN ARBEITSSPEICHERN = MISE EN OEUVRE DES MEMOIRES DYNAMIQUES A ACCES DIRECTWITTGRUBER F; HEINZERLING H.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 2; PP. 56-58; BIBL. 11 REF.Article

16-K STATIC RAM TAKES NEW ROUTE TO HIGH SPEEDSUD R; HARDEE KC.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 20; PP. 117-123Article

HITH SPEED 4 K STATIC RAM USING DSA MOSTSTAKAHASHI K; IKEJIMA H; MORIMOTO M et al.1978; N.E.C. RES. DEVELOP.; JPN; DA. 1978; NO 51; PP. 16-21; BIBL. 6 REF.Article

A RANDOM ACCESS MEMORY DATA LOGGERCOXALL A; OWEN D.1978; LAB. PRACT.; GBR; DA. 1978; VOL. 27; NO 7; PP. 566-567; BIBL. 5 REF.Article

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