MEMOIRE A COUCHE MINCE CARACTERISEE PAR UN CYCLE DE 400 NSHAMERLIK R.1975; ELEKTROTECH. CAS.; CESKOSL.; DA. 1975; VOL. 26; NO 1; PP. 43-52; ABS. RUSSE ALLEM. ANGL.; BIBL. 8 REF.Article

EVOLUTION DES MEMOIRES VIVES (RAM) INTEGREESFONTENAY R.1972; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1972; NO 162; PP. 41-43Serial Issue

DENSE, INTERCHANGEABLE ROMS WORK WITH FAST MICROPROCESSORS.GREENE R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 104-107Article

CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article

V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article

EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article

ELECTRICALLY ERASABLE AND REPROGRAMMABLE READ-ONLY MEMORY USING THE N-CHANNEL SIMOS ONE TRANSISTOR CELL.ROSSLER B.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 606-610; BIBL. 7 REF.Article

FERROELECTRIC FIELD-EFFECT MEMORY DEVICE USING BI₄TI₃O₁₂.SUBIBUCHI K; KUROGI Y; ENDO N et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 2877-2881; BIBL. 20 REF.Article

RESISTIVE-INSULATED-GATE ARRAYS AND THEIR APPLICATIONS: AN EXPLORATORY STUDY.WHELAN MV; DAVERVELD LA; DE GROOT JG et al.1975; PHILIPS RES. REP.; NETHERL.; DA. 1975; VOL. 30; NO 6; PP. 436-482; BIBL. 8 REF.Article

A ROM-CONTROLLED THYRISTOR TRIGGER CIRCUITCERNUSHI FRIAS B.1980; PROC. I.E.E.E.; USA; DA. 1980; VOL. 68; NO 3; PP. 413-414; BIBL. 3 REF.Article

A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

THE ORGANIZATION OF MICROPROGRAM STORESDAS GUPTA S.1979; COMPUTG SURV.; USA; DA. 1979; VOL. 11; NO 1; PP. 39-65; BIBL. 3 P.Article