HOLOGRAPHIC MEMORY1971; ELECTRON. ENGR; U.S.A.; DA. 1971; VOL. 30; NO 8; PP. 36Serial Issue

JAPANESE DEVELOP NONDESTRUCTIVE ANALOG SEMICONDUCTOR MEMORY.1974; ELECTRONICS; U.S.A.; DA. 1974; VOL. 47; NO 14; PP. 29-30Article

TWO-JOSEPHSON-JUNCTION INTERFEROMETER MEMORY CELL FOR N.D.R.O.BEHA H.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 596-598; BIBL. 4 REF.Article

MULTILEVEL RANDOM ACCESS MEMORY USING ONE JFET PER CELL.HEALD RA; HODGES DA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 324-327; BIBL. 5 REF.Conference Paper

A NOVEL HIGH-PERFORMANCE BIPOLAR MONOLITHIC MEMORY CELLFARBER AS; SCHLIG ES.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 4; PP. 297-298; BIBL. 2 REF.Serial Issue

MAS-ROM: THE FABRICATION AND MEMORY CHARACTERISTICSWADA T; NAKAGIRI M; IWASE K et al.1972; N.E.C. RES. DEVELOP.; JAP.; DA. 1972; NO 26; PP. 110-121; BIBL. 10 REF.Serial Issue

FUNDAMENTAL CRITERIA FOR THE DESIGN OF HIGH-PERFORMANCE JOSEPHSON NONDESTRUCTIVE READOUT RANDOM ACCESS MEMORY CELLS AND EXPERIMENTAL CONFIRMATIONHENKELS WH.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8143-8168; BIBL. 36 REF.Article

AN INDUCTIVELY COUPLED MEMORY CELL FOR NDRO WITH TWO JOSEPHSON JUNCTIONS.JUTZI W.1976; CRYOGENICS; G.B.; DA. 1976; VOL. 16; NO 2; PP. 81-88; BIBL. 9 REF.Article

CORRECTION DES DEFAUTS ET DES ERREURSTSYBAKOV BS.1975; PROBL. PEREDACHI INFORM.; S.S.S.R.; DA. 1975; VOL. 11; NO 3; PP. 21-30; BIBL. 4 REF.Article

INTEGRATED MAGNETIC MEMORIES. I1972; I.E.E.E. TRANS. MAGNET.; U.S.A.; DA. 1972; VOL. 8; NO 3; PP. 564-573; BIBL. DISSEM.Serial Issue

SOME STUDIES ON FAST SWITCHING IN TOROIDAL MEMORY CORE.DUTTA MAJUMDER D; DAS J.1977; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1977; VOL. 23; NO 8; PP. 511-515; BIBL. 8 REF.Article

ETUDE DES CARACTERISTIQUES DYNAMIQUES D'UN IONOTRON AU SELENIUM EN REGIME DYNAMIQUEGEORGIEV NV; ALEKSEYUNAS AA; CHESNIS AA et al.1971; LIET. T.S.R. MOKSLU AKAD. DARB., B; S.S.S.R.; DA. 1971; NO 4; PP. 203-210; ABS. LITU. ANGL.; BIBL. 7 REF.Serial Issue

MEMORY INTERFACE FOR THE 2650 MICROPROCESSOR.SCHUTTE H.1977; EUROMICRO NEWSLETTER; NETHERL.; DA. 1977; VOL. 3; NO 3; PP. 68-76Article

CHARACTER GENERATION USING MOS READ-ONLY MEMORIESEILER RM.1972; ELECTRON. ENGR; U.S.A.; DA. 1972; VOL. 30; NO 9; PP. DC.6-DC.9Serial Issue

An inductively coupled single-flux quantum NDRO memory cellKOJIMA, K; NOGUCHI; HAMANAKA, K et al.IEEE electron device letters. 1983, Vol 4, Num 8, pp 264-266, issn 0741-3106Article

EQUIPEMENTS ELECTRONIQUES ACTUELS. III. MEMOIRES INTEGREES ETAT SOLIDEHAINZMANN J.1977; MERES ES AUTOMAT.; MAGYAR.; DA. 1977; VOL. 25; NO 8; PP. 303-307; ABS. RUSSE ALLEM. ANGL.; BIBL. 11 REF.Article

PHYSICS OF MULTILAYER-GATE IGFET MEMORIESKAHNG D; NICOLLIAN EH.1972; APPL. SOLID STATE SCI.; U.S.A.; DA. 1972; VOL. 3; PP. 1-70; BIBL. 3 P.Serial Issue

Josephson NDRO memory cell with a direct-coupled sense gateENPUKY, K; SUEOKA, K; YOSHIDA, K et al.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1984, Vol 67, Num 6, pp 331-332, issn 0387-236XArticle

A novel non-destructible readout molecular memoryYONGCHAO LIANG; DVORNIKOV, Alexander S; RENTZEPIS, Peter M et al.Optics communications. 2003, Vol 223, Num 1-3, pp 61-66, issn 0030-4018, 6 p.Article

Miniaturized vortex transitional Josephson memory cell by a vertically integrated device structureNAGASAWA, S; TAHARA, S; NUMATA, H et al.IEEE transactions on applied superconductivity. 1994, Vol 4, Num 1, pp 19-24, issn 1051-8223Article

Organic materials for reversible optical data storageFERINGA, B. L; JAGER, W. F; DE LANGE, B et al.Tetrahedron (Oxford. Print). 1993, Vol 49, Num 37, pp 8267-8310, issn 0040-4020Article

Charge-injection imaging: Operating techniques and performances characteristicsBURKE, Hubert K; MICHON, Gerald J.SPIE milestone series. 2003, Vol 177, pp 36-43, issn 1050-0529, 8 p.Article

Perturbations to the Stoner-Wohlfarth threshold in 2×20 μm M-R memory elements = Perturbations du seuil de Stoner-Wohlfarth dans des éléments de mémoire magnétorésistifs de 2×20 μmCOMSTOCK, C. S; YOO, H. Y; POHM, A. V et al.Journal of applied physics. 1988, Vol 63, Num 8, pp 4321-4323, issn 0021-8979, 2BConference Paper