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PLATINUM-INDUCED HYSTERISIS AND NONVOLATILE MEMORY PROPERTIES IN MOS SYSTEMS (PLATMOS)NASSIBIAN AG; FARAONE L.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1757-1761; BIBL. 12 REF.Article

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CHALCOGENIDE MEMORY MATERIALSHOLMBERG SH; SHANKS RR; BLUHM VA et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 333-344; BIBL. 17 REF.Article

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INTEGRATED CIRCUITS - MOS VLSI MEMORY1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 336-363; BIBL. DISSEM.Conference Paper

LA NOVRAM: A LA FOIS RAM ET ROM1978; INTER ELECTRON.; FRA; DA. 1978; NO 273; PP. 44-45Article

ELECTRICALLY ERASABLE BURIED-GATE NONVOLATILE READ-ONLY MEMORY.NEUGEBAUER CA; BURGESS JF; STEIN L et al.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 613-618; BIBL. 10 REF.Article

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