Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("MEMOIRE NON VOLATILE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 2985

  • Page / 120
Export

Selection :

  • and

ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYERDIMARIA DJ; DEMEYER KM; SERRANO CM et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4825-4842; BIBL. 54 REF.Article

EVALUATION OF AN INTEGRAL IN THE THEORY OF NON VOLATILE SEMICONDUCTOR MEMORIES.FERRIS PRABHU AV; LUBART ND; MEDVE TJ et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 1; PP. 74-75; BIBL. 13 REF.Article

FUNCTIONAL MODELLING OF NON-VOLATILE MOS MEMORY DEVICES FOR COMPUTER-AIDED DESIGN.CARD HC; ELMASRY MI.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 565-568; BIBL. 7 REF.Conference Paper

ELECTRON BEAM MEMORY STORES 32 MBITS. = MEMOIRE A FAISCEAU ELECTRONIQUE A 32 MBITS1975; DIGIT. DESIGN; U.S.A.; DA. 1975; VOL. 5; NO 6; PP. 15-16Article

NON VOLATILE MEMORY EFFECTS OF AG-AG PHOTODOPED AMORPHOUS AS2S3-MO DIODE.HIROSE Y; HIROSE H.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 3; PP. 378-379; BIBL. 4 REF.Article

MEMOIRE A SEMICONDUCTEUR NON VOLATILETARUI Y; NAGAI K; HAYASHI Y et al.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 10; PP. 990-1002; ABS. ANGL.; BIBL. 49 REF.Article

GIMOS. A NONVOLATILE MOS MEMORY TRANSISTORHSU ST.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 3; PP. 424-433; BIBL. 10 REF.Article

NON VOLATILE MEMORY STRUCTURE1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 825-835; ABS. FRE; BIBL. DISSEM.Conference Paper

ADD A STANDLY BATTERY TO A RAMBOYLE PW; WENTIN RF.1978; ELECTRON. DESIGN; USA; DA. 1978; VOL. 26; NO 15; PP. 80-83; BIBL. 1 REF.Article

MEMOIRE A SEMICONDUCTEUR NON VOLATILE REPROGRAMMABLE ELECTRIQUEMENTTARUI Y; HAYASHI Y; NAGAI K et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 248-255; ABS. ANGL.; BIBL. 6 REF.Article

MEGABIT BUBBLE MEMORY FOR NON-VOLATILE STORAGESIEGEL P.1980; ELECTRON. ENJ.; ISSN 0013-4902; GBR; DA. 1980; VOL. 52; NO 634; PP. 51-59; (5 P.)Article

NON-VOLATILE R.A.M.S IN CONSUMER CIRCUITSWALLACE C.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 3; PP. 100-103; (3 P.)Article

POTENTIAL OF ALTERNATE DIELECTRICS FOR SINGLE AND COMPOSITE FILM FET GATE APPLICATIONS.BALK P.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 4; PP. 635-662; BIBL. 3 P. 1/2Article

BUBBLE MEMORIES-MASS STORAGE IN THE PALM OF YOUR HANDCOX G.1979; INSTRUM. CONTROL SYST.; USA; DA. 1979; VOL. 52; NO 6; PP. 59-62Article

ELECTRICAL CHARACTERISTICS, RELIABILITY AND APPLICATION OF THE 16 KBIT EEPROMWAKIMOTO H; NABETANI S; SATO N et al.1983; HITACHI REVIEW; ISSN 0018-277X; JPN; DA. 1983; VOL. 32; NO 1; PP. 45-48; BIBL. 4 REF.Article

LES MEMOIRES NON VOLATILES ELECTRIQUEMENT REPROGRAMMABLES. BILAN ET PERSPECTIVES. I: LES PRINCIPES PHYSIQUES ET LEUR MISE EN OEUVREROUX P; CAZENAVE P; DOM JP et al.1983; ONDE ELECTRIQUE; ISSN 0030-2430; FRA; DA. 1983; VOL. 63; NO 3; PP. 29-33; ABS. ENG; BIBL. 21 REF.Article

MEMOIRE BIPOLAIRE NON VOLATILE REPROGRAMMABLE ELECTRIQUEMENTDOM JEAN PAUL; ROUX PHILIPPE.1981; ; FRA; DA. 1981; DGRST/78 7 2991; 41 P.; 30 CM; BIBL. 13 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

PLATINUM-INDUCED HYSTERISIS AND NONVOLATILE MEMORY PROPERTIES IN MOS SYSTEMS (PLATMOS)NASSIBIAN AG; FARAONE L.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 9; PP. 1757-1761; BIBL. 12 REF.Article

DES "EEPROM" QUI POURRAIENT ETRE LES PREMIERES RAM NON VOLATILESARMAILLE J.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 37-39Article

FUNCTIONAL MODELLING OF NON-VOLATILE MOS MEMORY DEVICES.CARD HC; ELMASRY MI.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 10; PP. 863-870; BIBL. 32 REF.Article

INJECTION, TRAPPING AND RELEASE FROM SIO2 OF PHOTO-GENERATED HOLE CHARGE FOR AN ERASABLE NON-VOLATILE OPTICAL MEMORY.NAGAI K; HAYASHI Y; TARUI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 1; PP. 159-160; BIBL. 2 REF.Article

NON-VOLATILE MEMORY PROPERTIES OF METAL/SRTIO3/SIO2/SI STRUCTURESHUANG TY; GRANNEMANN WW.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 2; PP. 159-166; BIBL. 16 REF.Article

ELECTRICALLY REPROGRAMMABLE NONVOLATILE SEMICONDUCTOR MEMORY WITH MNMOOS (METAL-NITRIDE-MOLYDENUM-OXIDE-SILICON) STRUCTURE.RAI Y; SASAMI T; HASEGAWA Y et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 313-316; BIBL. 4 REF.Conference Paper

BIAS-TEMPERATURE-STRESS STUDIES OF CHARGE RETENTION IN DUAL-DIELECTRIC, CHARGE-STORAGE CELLS.THORNBER KK; KAHNG D; NEPPELL CT et al.1974; BELL SYST. TECH. J.; U.S.A.; DA. 1974; VOL. 53; NO 9; PP. 1741-1770; BIBL. 1 P.Article

SEMICONDUCTOR-FERROELECTRIC NONVOLATILE MEMORY USING ANOMALOUS HIGH PHOTOVOLTAGES IN FERROELECTRIC CERAMICSBRODY PS.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 153-155; BIBL. 11 REF.Article

  • Page / 120