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MOYENS ELEMENTAIRES ET SCHEMA POUR LA REALISATION DE SUPERGRANDS CIRCUITS INTEGRES A SEMICONDUCTEUR DE MEMOIRE OPERATIVELAPSHINSKIJ VA.1979; MIKROELEKTRONIKA; SUN; DA. 1979; VOL. 8; NO 4; PP. 302-311; BIBL. 14 REF.Article

PROGRAMMIERBARER FUNKTIONSGENERATOR FUER BELIEBIGE KURVENFORMEN MIT HALBLEITERSPEICHER. = GENERATEUR DE FONCTIONS PROGRAMMABLE POUR TOUTES FORMES DE COURBE AVEC MEMOIRE A SEMI-CONDUCTEURS1975; ELEKTRONIK; DTSCH.; DA. 1975; VOL. 24; NO 9; PP. 107-109; BIBL. 4 REF.Article

ADVANCES IN MEMORY TECHNOLOGY.KOEHLER HF.1974; COMPUTER DESIGN; U.S.A.; DA. 1974; VOL. 13; NO 6; PP. 71-77Article

MEMOIRE A SEMICONDUCTEUR NON VOLATILETARUI Y; NAGAI K; HAYASHI Y et al.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 10; PP. 990-1002; ABS. ANGL.; BIBL. 49 REF.Article

DEVELOPMENTS IN CMOS MEMORYWATSON D.1979; MICROELECTRON. AND RELIABIL.; GBR; DA. 1979 PUBL. 1980; VOL. 19; NO 5-6; PP. 449-452Conference Paper

DER FERNSCHREIBER LO 2000 ESR MIT ELEKTRONISCHEM SENDESPEICHER = LE TELEIMPRIMEUR LO 2000 ESR A MEMOIRE D'EMISSION ELECTRONIQUEHERWIG W.1979; FERNMELDE-PRAXIS; DEU; DA. 1979; VOL. 56; NO 2; PP. 52-57Article

L'APPAREIL DE PROGRAMMATION DU SYSTEME PROCONTIC S BROWN BOVERI.REMPT B.1975; REV. BROWN BOVERI; SUISSE; DA. 1975; VOL. 62; NO 10-11; PP. 485-489; BIBL. 4 REF.Article

ELARGISSEMENT DES POSSIBILITES FONCTIONNELLES DES MEMOIRES (DE CAPACITE SUPERIEURE A 4 KILOBITS) A SUPER GRAND DEGRE D'INTEGRATION EN TANT QUE METHODE D'AMELIORATION DES PARAMETRES DES MEMOIRES A SEMICONDUCTEURALEKSENKO AG; LAPSHINSKIJ VA.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 2; PP. 169-182; BIBL. 13 REF.Article

AMORPHOUS SEMICONDUCTORS FOR ELECTRICALLY ALTERABLE MEMORY APPLICATIONS.SHANKS RR.1974; COMPUTER DESIGN; U.S.A.; DA. 1974; VOL. 13; NO 5; PP. 95-100; BIBL. 2 REF.Article

CARACTERISTIQUES QUANTITATIVES D'AUGMENTATION DE LA FIABILITE DES MEMOIRES SEMICONDUCTRICES LORS DE LA DETECTION ET DE LA CORRECTION DES ERREURSBORISOV VS.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 109-112; BIBL. 11 REF.Article

TECHNIQUES FOR MEMORY TESTINGCRAFTS JM.1979; COMPUTER; USA; DA. 1979; VOL. 12; NO 10; PP. 23-31; (8 P.)Article

PRESENT STATE AND EVOLUTION OF MASS MEMORIES.ROGGE H.1974; ONDE ELECTR.; FR.; DA. 1974; VOL. 54; NO 6; PP. 273-276; ABS. FRArticle

ELECTRONICA 80: MIKROPROZESSOREN UND HALBLEITERSPEICHER = ELECTRONIQUE 80: MICROPROCESSEURS ET MEMOIRES SEMICONDUCTEURPREUSS A.1981; RTP, REGELUNGSTECH. PRAX.; ISSN 0340-4730; DEU; DA. 1981; VOL. 23; NO 4; PP. 132-134; BIBL. 2 REF.Article

SEMICONDUCTOR MEMORIESWILCOCK JD.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 4; PP. 106-113; (5 P.)Article

PREDICTING THE REAL COSTS OF SEMICONDUCTOR-MEMORY SYSTEMS.KOPPEL RJ; MALTZ I.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 24; PP. 117-122Article

THE ORGANIZATION OF SOME SOLID-STATE STORESDEAN KJ.1972; RADIO ELECTRON. ENGRS; G.B.; DA. 1972; VOL. 42; NO 8; PP. 357-363; BIBL. 18 REF.Serial Issue

TECHNOLOGICAL IMPACT ON SEMICONDUCTOR MEMORIES.OLIPHANT JM.1976; IN: COMPCON '76 FALL. COMPUT... BY MILLIONS FOR MILLIONS. IEEE COMPUT. SOC. INT. CONF. 13. DIG. PAPERS; WASHINGTON, D.C.; 1976; LONG BEACH, CALIF.; IEEE COMPUTER SOC.; DA. 1976; PP. 174-177Conference Paper

JAPANESE DEVELOP NONDESTRUCTIVE ANALOG SEMICONDUCTOR MEMORY.1974; ELECTRONICS; U.S.A.; DA. 1974; VOL. 47; NO 14; PP. 29-30Article

ALL SEMICONDUCTOR MEMORY SELECTED FOR NEW MINICOMPUTER SERIES.FRANKENBERG RJ.1974; HEWLETT-PACKARD J.; U.S.A.; DA. 1974; VOL. 26; NO 2; PP. 15-20 (5P.)Article

PROGRAMMING UNIT ROBOTRON 1902 FOR PROM CIRCUITSFAHR K; SPORBERT HD.1980; NEUE TECH. BUERO; DDR; DA. 1980; VOL. 24; NO 1; PP. 14-15Article

L'EVOLUTION DES CIRCUITS INTEGRESBOREL J.1980; BULL. LIAISON RECH. INFORMAT. AUTOMAT.; FRA; DA. 1980; NO 60; PP. 4-12; BIBL. 12 REF.Article

LE NS 16000, DE 16 BITS, BIENTOT DANS LA COMPETITION: ARCHITECTURE MEMOIRE A MEMOIRE, ADRESSAGE NON SEGMENTE DE 16 MEGA-OCTETS, PROCESSEURS ESCLAVES ET USAGE DE LANGAGES EVOLUES, AINSI SE PRESENTE LE NOUVEAU MICROPROCESSEUR 16 BITS DE NATIONAL SEMICONDUCTORLILEN H.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 285; PP. 22-23Article

CHARACTERIZATION OF AN MOS SENSE AMPLIFIERVARSHNEY RC; VENKATESWARAN K.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 2; PP. 268-270; BIBL. 2 REF.Article

THE TESTING OF MODERN MEMORIES.DAVISON C.1978; ONDE ELECTR.; FR.; DA. 1978; VOL. 58; NO 5; PP. 396-400; ABS. FR.Article

CHECKING OUT SEMICONDUCTOR MEMORIES FOR ELECTRONIC SWITCHING SYSTEMS.GREEN CW.1977; BELL LAB. REC.; U.S.A.; DA. 1977; VOL. 55; NO 5; PP. 131-136Article

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