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MEMOIRES MORTES OU VIVES: COMMENT LES TESTER.BOUCHET C.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 21-26Article

POLYSILICON-FILLED NOTCH PRODUCES FLAT, WELL-ISOLATED BIPOLAR MEMORYSANDERS TJ; MORCOM WR.1973; ELECTRONICS; U.S.A.; DA. 1973; VOL. 46; NO 8; PP. 117-120Serial Issue

A 100 NS 5 V ONLY 64 K X 1 MOS DYNAMIC RAMCHAN JY; BARNES JJ; WANG CY et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 839-846; BIBL. 11 REF.Article

ADD A STANDLY BATTERY TO A RAMBOYLE PW; WENTIN RF.1978; ELECTRON. DESIGN; USA; DA. 1978; VOL. 26; NO 15; PP. 80-83; BIBL. 1 REF.Article

CONCEPTION ET REALISATION DE CARTES-MEMOIRES A CI DE 8K X 8 BITS OU 4K X 16 BITSMASSON JC.1973; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1973; NO 171; PP. 65-70Serial Issue

AN 18 K BIPOLAR DYNAMIC RANDOM ACCESS MEMPRYPENOYER RF; BADIH EL KAREN; HOUGHTON RJ et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 861-865; BIBL. 4 REF.Article

LA MEMOIRE RAM 16 K TMS 4070 ET SES APPLICATIONS.CHAUVEL G.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 234; PP. 43-47Article

THE 64-K RAM: WHICH WAY TO REFRESH . = LES MEMOIRES VIVES A ACCES DIRECT A 64000 ELEMENTS BINAIRES: DE QUELLE MANIERE FAUT-IL LES RAFRAICHIR .JOHNSTON B.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 1; PP. 145-147Article

PRESENT AND FUTURE TRENCH OF DYNAMIC MOS MEMORIES = TENDANCES D'EVOLUTION ACTUELLE ET FUTURE DES MEMOIRES MOS DYNAMIQUESHOFFMANN K.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 115-119; BIBL. 17 REF.Article

THE RACE HEATS UP IN FAST STATIC RAMSCAPECE R.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 9; PP. 125-135Article

LES RAM 4K STATIQUES SONT PLUS FACILES A UTILISER.OUAKNINE M.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 236; PP. 20-22Article

AN INTEGRATED TEST CONCEPT FOR SWITCHED-CAPACITOR DYNAMIC MOS RAM'S.LO TC; GUIDRY MR.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 6; PP. 693-703; BIBL. 11 REF.Article

THE TESTING OF MODERN MEMORIES.DAVISON C.1978; ONDE ELECTR.; FR.; DA. 1978; VOL. 58; NO 5; PP. 396-400; ABS. FR.Article

OXIDE ISOLATION BRINGS HIGH DENSITY TO PRODUCTION BIPOLAR MEMORIESBAKER WD; HERNDON WH; LONGO TA et al.1973; ELECTRONICS; U.S.A.; DA. 1973; VOL. 46; NO 7; PP. 65-70Serial Issue

UNE RAM DE 4.096 BITSFONTENAY R.1973; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1973; NO 168; PP. 32-33Serial Issue

THE 64-KBIT RAM, AN IMPORTANT NEW STATE OF THE ART IN SEMICONDUCTOR TECHNOLOGY = LA MEMOIRE VIVE D A ACCES SELECTIF A 64 KBITS REPRESENTE UNE ETAPE IMPORTANTE DANS L'EVOLUTION DE LA TECHNOLOGIE DES SEMICONDUCTEURSDEPPE HR; SCHWARZL S.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 127-132; BIBL. 11 REF.Article

SYSTEM DESIGN WITH DYNAMIC MEMORIES TAKES ATTENTION TO DETAIL.CALEBOTTA S.1978; ELECTRONICS; U.S.A.; DA. 1978; VOL. 51; NO 3; PP. 109-113Article

-K RAM EASES MEMORY DESIGN FOR MAINFRAMES & MICROCOMPUTERS.COKER D.1977; ELECTRONICS; U.S.A.; DA. 1977; VOL. 50; NO 9; PP. 115-119Article

HMOS II STATIC RAMS OVERTAKE BIPOLAR COMPETITIONJECMEN RM; HUI CH; EBEL AV et al.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 19; PP. 124-128Article

64-K DYNAMIC RAM HAS PIN THAT REFRESHESFORD DC; MOENCH J.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 4; PP. 141-147Article

DES MEMOIRES PLUS UTILES MORTES QUE VIVESMALET N.1978; ZERO, UN, INFORMAT.; FRA; DA. 1978; NO 123; PP. 87-90Article

IT'S A USER'S PARADISE: CHEAPER RAMS, REPROGRAMABLE ROMS, CCDS AND BUBBLES COMING ALONG.ALTMAN L.1977; ELECTRONICS; U.S.A.; DA. 1977; VOL. 50; NO 2; PP. 81-84Article

A 90 ns 256 K×1 bit DRAM with double-level Al technologyFUJII, T; MITAKE, K; TADA, K et al.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 437-440, issn 0018-9200Article

Fully decoded GaAs 1-kbit static RAM using closely spaced electrode FET'sKATANO, F; TAKAHASHI, K; UETAKE, K et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 3, pp 810-815, issn 0018-9200Article

A sub-100 ns 256K DRAM with open bit line schemeNAKANO, T; YABU, T; NOGUCHI, E et al.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 452-456, issn 0018-9200Article

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