L'EEPROM QUI SE VEUT RAM NON VOLATILEROUBLOT R.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 44-45Article

EEPROM ECLIPSES OTHER REPROGRAMMABLE MEMORIESDESROCHERS G.1980; ELECTRON. DES.; ISSN 0013-4872; USA; DA. 1980; VOL. 28; NO 24; PP. 247-250Article

CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article

V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article

EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article

ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NONVOLATILE RAMWALLACE C.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 10; PP. 128-131Article

KNOW THY MEMORY: THE USE OF QUESTIONNAIRES TO ASSESS AND STUDY MEMORYHERRMANN DJ.1982; PSYCHOLOGICAL BULLETIN; ISSN 0033-2909; USA; DA. 1982; VOL. 92; NO 2; PP. 434-452; BIBL. 2 P.Article

NON-VOLATILE R.A.M.S IN CONSUMER CIRCUITSWALLACE C.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 3; PP. 100-103; (3 P.)Article

DES "EEPROM" QUI POURRAIENT ETRE LES PREMIERES RAM NON VOLATILESARMAILLE J.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 37-39Article

MEMOIRE ANALOGIQUE A 2 CANAUX POUR SIGNAUX VARIANT LENTEMENTPONKRATOV EI.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 102-104; BIBL. 3 REF.Article

MEMOIRE ANALOGIQUEKLIMENKO VT; MIKHAJLOV YU A; VERETEL'NIK N YA et al.1979; KHIM. PROM-ST, AVTOM. KHIM. PROIZVOD.; SUN; DA. 1979; NO 1; PP. 42-43Article

HIERARCHIES DE MEMOIRES INTEGRANT DES MEMOIRES A BULLES MAGNETIQUESLITAIZE D; GLIZE P; AKIL A et al.1982; ARCHITECTURE DES MACHINES ET SYSTEMES INFORMATIQUES. CONGRES. AFCET INFORMATIQUE 82. CONGRES/1982-11-17/LILLE; FRA; BOULOGNE-BILLANCOURT: ED. HOMMES ET TECHNIQUES; DA. 1982; PP. 145-155; ABS. ENG; BIBL. 2 P.Conference Paper

A1.5 X 10⁸ BIT RANDOM ACCESS READ-ONLY HOLOGRAPHIC MEMORY.WATERWORTH P.1973; IN: TOP. MEET. OPT. STORAGE DIGITAL DATA; ASPEN, COLO; 1973; WASHINGTON; OPT. SOC. AMERICAN; DA. 1973; PP. TUA2.1-TUA2.4; BIBL. 2 REF.Conference Paper

A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

DIGITAL STORAGE - A REVIEW OF CURRENT TECHNOLOGIESSCOTT CJ.1979; TELECOMMUNIC. J. AUSTRAL.; AUS; DA. 1979; VOL. 29; NO 2; PP. 122-128Article

A MULTITRACK FERROELECTRIC ARRAY WITH INHERENT TRACK ACCESSGEARY JM.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1046-1047; BIBL. 7 REF.Article

A FAULT-TOLERANT 64 K DYNAMIC RANDOM-ACCESS MEMORYCENKER RP; CLEMONS DG; HUBER WR et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 853-860; BIBL. 14 REF.Article

DENSE, INTERCHANGEABLE ROMS WORK WITH FAST MICROPROCESSORS.GREENE R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 104-107Article

A THEORETICAL AND EXPERIMENTAL ANALYSIS OF THE BURIED-SOURCE VMOS DYNAMIC RAM CELLJENNE FB; BARNES JJ; RODGERS TJ et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1204-1213; BIBL. 20 REF.Article

ETUDE DE POINT MEMOIRE A JONCTION POUR PROM.MOUSSIE M.1977; DGRST-7570660; FR.; DA. 1977; PP. 1-37; BIBL. 2 P.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MINIATURISES)Report

CLEARING UP THE CONFUSION: VIRTUAL VS MAPPED MEMORY.TANNER DJ.1976; COMPUTER DESIGN; U.S.A.; DA. 1976; VOL. 15; NO 10; PP. 101-105Article

FULLY OPERATIONAL WRITE-READ-WRITE AND RANDOM-ACCESS OPTICAL STORE.HILL B; KRUMME JP; MUCH G et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3697-3701; BIBL. 11 REF.Article

STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIESFALCONY C; DIMARIA DJ; DONG DW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 43-47; BIBL. 13 REF.Article

MEMORY DEFICITS IN DISPERSION: EVIDENCE UTILIZING THE WECHSLER MEMORY SCALEBRESLOW R; KOCSIS J; BELKIN B et al.1980; PERCEPT. MOT. SKILLS; ISSN 0031-5125; USA; DA. 1980; VOL. 51; NO 2; PP. 541-542; BIBL. 6 REF.Article

LA 2816 D'INTEL EST LA PREMIERE MEMOIRE EEPROM 16K NON VOLATILE EFFACABLE MOT PAR MOT1980; MES., REGUL., AUTOM.; ISSN 0026-0193; FRA; DA. 1980; VOL. 45; NO 12; PP. 91Article