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Results 1 to 25 of 106668

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L'EEPROM QUI SE VEUT RAM NON VOLATILEROUBLOT R.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 44-45Article

DESIGNER'S REFERENCE TO SEMICONDUCTOR MEMORIES: PROMS AND RAMS1980; ELECTRON. DESIGN; USA; DA. 1980; VOL. 28; NO 15; PP. 81-138; (34 P.)Article

EEPROM ECLIPSES OTHER REPROGRAMMABLE MEMORIESDESROCHERS G.1980; ELECTRON. DES.; ISSN 0013-4872; USA; DA. 1980; VOL. 28; NO 24; PP. 247-250Article

CELL LAYOUT BOOSTS SPEED OF LOW-POWER 64-K ROM.WILSON DR.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 96-99Article

V-MOS CONFIGURATION PACKS 64 KILOBITS INTO 175-MIL2 CHIP.HOLDT T; YU R.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 7; PP. 99-104Article

LES MEMOIRES DIFMOS, NON VOLATILES, EFFACABLES ET REPROGRAMMABLES ELECTRIQUEMENTDE MONTAIGNE J.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 267; PP. 36-39Article

EAROM: NON-VOLATILE DATA STORAGESIRAIH A.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 609; PP. 61-62Article

ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NONVOLATILE RAMWALLACE C.1979; ELECTRONICS; USA; DA. 1979; VOL. 52; NO 10; PP. 128-131Article

KNOW THY MEMORY: THE USE OF QUESTIONNAIRES TO ASSESS AND STUDY MEMORYHERRMANN DJ.1982; PSYCHOLOGICAL BULLETIN; ISSN 0033-2909; USA; DA. 1982; VOL. 92; NO 2; PP. 434-452; BIBL. 2 P.Article

NON-VOLATILE R.A.M.S IN CONSUMER CIRCUITSWALLACE C.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 3; PP. 100-103; (3 P.)Article

DES "EEPROM" QUI POURRAIENT ETRE LES PREMIERES RAM NON VOLATILESARMAILLE J.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 37-39Article

INEXPENSIVE ADAPTER LETS 8-K PROGRAMMER BURN-IN 16-K PROMSGALLO MJ.1980; ELECTRON. DES.; ISSN 0013-4872; USA; DA. 1980; VOL. 28; NO 25; PP. 111-112Article

MEMOIRE ANALOGIQUE A 2 CANAUX POUR SIGNAUX VARIANT LENTEMENTPONKRATOV EI.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 102-104; BIBL. 3 REF.Article

MEMOIRE ANALOGIQUEKLIMENKO VT; MIKHAJLOV YU A; VERETEL'NIK N YA et al.1979; KHIM. PROM-ST, AVTOM. KHIM. PROIZVOD.; SUN; DA. 1979; NO 1; PP. 42-43Article

COMPUTATION OF COLD-START MISS RATIOS = EVALUATION DES RAPPORTS DE MANQUES POUR UN DEPART A VIDEEASTON MC.1978; I.E.E.E. TRANS. COMPUTERS; USA; DA. 1978; VOL. 27; NO 5; PP. 404-408; BIBL. 7 REF.Article

HIERARCHIES DE MEMOIRES INTEGRANT DES MEMOIRES A BULLES MAGNETIQUESLITAIZE D; GLIZE P; AKIL A et al.1982; ARCHITECTURE DES MACHINES ET SYSTEMES INFORMATIQUES. CONGRES. AFCET INFORMATIQUE 82. CONGRES/1982-11-17/LILLE; FRA; BOULOGNE-BILLANCOURT: ED. HOMMES ET TECHNIQUES; DA. 1982; PP. 145-155; ABS. ENG; BIBL. 2 P.Conference Paper

SEMICONDUCTOR MEMORY UPDATE. I: ROMSHNATEK ER.1979; COMPUTER DESIGN; USA; DA. 1979; VOL. 18; NO 12; PP. 67-77; BIBL. 9 REF.Article

A1.5 X 108 BIT RANDOM ACCESS READ-ONLY HOLOGRAPHIC MEMORY.WATERWORTH P.1973; IN: TOP. MEET. OPT. STORAGE DIGITAL DATA; ASPEN, COLO; 1973; WASHINGTON; OPT. SOC. AMERICAN; DA. 1973; PP. TUA2.1-TUA2.4; BIBL. 2 REF.Conference Paper

A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTORTANIMOTO M; MUROTA J; OHMORI Y et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 517-520; BIBL. 7 REF.Article

DIGITAL STORAGE - A REVIEW OF CURRENT TECHNOLOGIESSCOTT CJ.1979; TELECOMMUNIC. J. AUSTRAL.; AUS; DA. 1979; VOL. 29; NO 2; PP. 122-128Article

PROGRAM RESTRUCTURING IN A MULTILEVEL VIRTUAL MEMORYLAU EJ; FERRARI O.1983; IEEE TRANSACTIONS ON SOFTWARE ENGINEERING; ISSN 0098-5589; USA; DA. 1983; VOL. 9; NO 1; PP. 69-79; BIBL. 24 REF.Article

PRESENT AND FUTURE TRENCH OF DYNAMIC MOS MEMORIES = TENDANCES D'EVOLUTION ACTUELLE ET FUTURE DES MEMOIRES MOS DYNAMIQUESHOFFMANN K.1982; SIEMENS FORSCH.-ENTWICKLUNGSBER.; ISSN 0370-9736; DEU; DA. 1982; VOL. 11; NO 3; PP. 115-119; BIBL. 17 REF.Article

DESIGN LIMITATIONS IN LARGE BIPOLAR PROMSCLINE RL.1980; MICROELECTRONICS J.; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 5; PP. 15-19Article

WECHSLER MEMORY SCALE PERFORMANCE OF ELDERLY PSYCHIATRIC PATIENTSGILLEARD CJ.1980; J. CLIN. PSYCHOL.; ISSN 0021-9762; USA; DA. 1980; VOL. 36; NO 4; PP. 958-960; BIBL. 6 REF.Article

ANALYSE DE LA CAPACITE D'INFORMATION D'UNE MEMOIRE OPERATIVE OPTOELECTRONIQUE AVEC ENREGISTREMENT DE L'INFORMATION PAR BITSZHALEJKO VB; KITOVICH VV.1978; AVTOMAT. I TELEMEKH.; SUN; DA. 1978; NO 6; PP. 163-172; ABS. ENG; BIBL. 4 REF.Article

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