Measurement dynamic linewidth properties of a 1.5 μm DFB-GRIN-rod coupled-cavity laser under direct high-frequency modulationLEE, T. P; MENOCAL, S. G.Electronics Letters. 1985, Vol 21, Num 22, pp 1046-1048, issn 0013-5194Article

High-speed 1.3 μm GaInAsP p-substrate buried-crescent lasers with semi-insulating Fe/Ti-doped InP current blocking layersZAH, C. E; CANEAU, C; MENOCAL, S. G et al.Electronics Letters. 1988, Vol 24, Num 11, pp 695-697, issn 0013-5194Article

Wide-bandwidth and high-power 1.3μm InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layersZAH, C. E; OSINSKI, J. S; MENOCAL, S. G et al.Electronics Letters. 1987, Vol 23, Num 1, pp 52-53, issn 0013-5194Article

Performance of 1.5μm λ/4-shifted DFB-SIPBH laser diodes with electron beam defined and reactive ion-etched gratingsZAH, C. E; CANEAU, C; MENOCAL, S. G et al.Electronics Letters. 1989, Vol 25, Num 10, pp 650-652, issn 0013-5194, 3 p.Article

Low-threshold and high-speed 1•5μm compressive-strained multiquantum well four-wavelength distributed-feedback laser arraysZAH, C. E; CHEUNG, K. W; LEE, T. P et al.Electronics Letters. 1991, Vol 27, Num 12, pp 1040-1042, issn 0013-5194, 3 p.Article

Fast wavelength-switching of laser transmitters and amplifiersKOBRINSKI, H; VECCHI, M. P; GOODMAN, M. S et al.IEEE journal on selected areas in communications. 1990, Vol 8, Num 6, pp 1190-1202, issn 0733-8716, 13 p.Article

Orientation dependence of S,Zn,Si,Te and Sn doping in OMCVD growth of InP and GaAs : application to DH lasers and lateral p-n junction arrays grown on non-planar substratesBHAT, R; CANEAU, C; ZAH, C. E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 772-778, issn 0022-0248Conference Paper

Fabrication and performance of 1•5υm GalnAsP travelling-wave laser amplifiers with angled facetsZAH, C. E; OSINSKI, J. S; CANEAU, C et al.Electronics Letters. 1987, Vol 23, Num 19, pp 990-992, issn 0013-5194Article

1.5μm compressive-strained multiquantum-well waveguide detectors for coherent polarisation-diversified receiversZAH, C. E; CHEUNG, K. W; BHAT, R et al.Electronics Letters. 1991, Vol 27, Num 10, pp 838-839, issn 0013-5194Article

Low-threshold 1.5 μm compressive-strained multiple- and single-quantum-well lasersCHUNG-EN ZAH; RAJARAM BHAT; FAVIRE, F. J et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 6, pp 1440-1450, issn 0018-9197Article

Phase modulation characteristics of 1.5μm strained-layer multiple quantum well laser amplifiersREICHENBACH, D; ZAH, C. E; ANDREADAKIS, N et al.Electronics Letters. 1990, Vol 26, Num 22, pp 1858-1860, issn 0013-5194Article

Narrow-linewidth 1•3 μ DFB-DCPBH lasers with λ/4-shifted first-order gratings fabricated by electron beam lithography using a new fast resistZAH, C. E; CANEAU, C; MENOCAL, S. G et al.Electronics Letters. 1988, Vol 24, Num 2, pp 94-96, issn 0013-5194Article

Nanosecond-tunable double-section DFB laser for dynamic wavelength addressing applicationsCOOPER, J. M; DIXON, J; GOODMAN, M. S et al.Electronics Letters. 1988, Vol 24, Num 19, pp 1237-1239, issn 0013-5194Article

1.3 μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatingsZAH, C. E; CANEAU, C; SHOKOOHI, F. K et al.Electronics Letters. 1988, Vol 24, Num 20, pp 1275-1276, issn 0013-5194Article