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kw.\*:("MERCURE II SELENIURE")

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PRECIPITATIONS IN HGCRSE4 CRYSTALS OBTAINED BY THE CHEMICAL TRANSPORT METHODJELONEK M; WINIARSKI A; CHELKOWSKI A et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 1; PP. K5-K6; H.T. 2; BIBL. 1 REF.Article

STRUCTURE ET PROPRIETES DES COUCHES EPITAXIQUES DE SELENIURE DE MERCURESAVITSKIJ VG; ALEKSEENKO LI; FILATOVA AK et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 10; PP. 1746-1749; BIBL. 15 REF.Article

ETUDE PHYSICO-CHIMIQUE DU SYSTEME HGCR2SE4-HGIN2SE4KOVALEVA IS; LEVSHIN VA; KALINNIKOV VT et al.1981; Z. NEORG. HIM.; ISSN 0044-457X; SUN; DA. 1981; VOL. 26; NO 4; PP. 1029-1033; BIBL. 2 REF.Article

PHASE STUDIES IN THE SYSTEM MERCURY SELENIDE-MANGANESE SELENIDE.PAJACZKOWSKA A; RABENAU A.1977; MATER. RES. BULL.; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 183-187; BIBL. 10 REF.Article

VAPOR GROWTH OF HGCR2SE4.GIBART P.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 1; PP. 21-27; BIBL. 15 REF.Article

INFLUENCE DES POLYMERES AQUASOLUBLES NON IONIQUES SUR LES POTENTIELS ELECTROCINETIQUES DES PARTICULES COLLOIDALESKOCHERGA II; BARAN AA.1976; TEOR. EKSPER. KHIM., U.S.S.R.; S.S.S.R.; DA. 1976; VOL. 12; NO 5; PP. 640-647; BIBL. 16 REF.Article

X-RAY INVESTIGATIONS OF TEMPERATURE DEPENDENCE OF THE LATTICE CONSTANTS OF HGCR2S4, HGCR2SE4, CDCR2S4, CDCR2SE4, CUCR2SE4, ZNCR2SE4 POLYCRYSTALS IN A TEMPERATURE RANGE FROM 70OK TO THE DECOMPOSITION TEMPERATURE.SLEBARSKI A; KONOPKA D; CHELKOWSKI A et al.1974; PHYS. LETTERS, A; NETHERL.; DA. 1974; VOL. 50; NO 5; PP. 333-334; BIBL. 12 REF.Article

ELABORATION ET ETUDE PHYSICO-CHIMIQUE DE CHALCOGENURES METALLIQUES EN VUE DE LEUR APPLICATION A LA PHOTOELECTROCHIMIEMAYET FRANCOIS.1980; ; FRA; DA. 1980; 103 P.: ILL.; 30 CM; BIBL. 117 REF.; TH. 3E CYCLE: CHIM. MINER./LYON 1/1980/966Thesis

REACTION DE HGSE AVEC CR2SE3KOVALEVA IS; KUZNETSOVA I YA; KALINNIKOV VT et al.1980; Z. NEORG. HIM.; ISSN 0044-457X; SUN; DA. 1980; VOL. 25; NO 4; PP. 1156-1159; BIBL. 9 REF.Article

ON THE NATURE OF THE NONSTOICHIOMETRY DEFECTS IN CDXHG1-XSE (X <OU= 0.2) SEMICONDUCTING ALLOYS. IIWANOWSKI RJ; BAK J.1981; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1981; VOL. 59; NO 3; PP. 325-339; BIBL. 36 REF.Article

PREPARATION AND CHARACTERIZATION OF CD0.95MN0.05SE SINGLE CRYSTALSKHAZAI B; KERSHAW R; DWIGHT K et al.1983; MATERIALS RESEARCH BULLETIN; ISSN 0025-5408; USA; DA. 1983; VOL. 18; NO 2; PP. 217-223; BIBL. 13 REF.Article

Interaction dans les systèmes Cu2Ge(Sn)Se3-HgSeMKRTCHYAN, S. A; ZHUKOR, EH. G; DOVLETOV, K et al.Žurnal neorganičeskoj himii. 1988, Vol 33, Num 9, pp 2379-2384, issn 0044-457XArticle

Pressure-induced phase transitions of HgSeHUANG, T; RUOFF, A. L.Physical review. B, Condensed matter. 1983, Vol 27, Num 12, pp 7811-7812, issn 0163-1829Article

Croissance cristalline et affinement de la structure de HgGa2Se4 = Crystal growth and refinement of the structure of HgGa2Se4GASTALDI, L; PARDO, M.-L.Comptes-rendus des séances de l'Académie des sciences. Série 2, Mécanique-physique, chimie, sciences de l'univers, sciences de la terre. 1984, Vol 298, Num 2, pp 37-38, issn 0750-7623Article

UNTERSUCHUNGEN AN EINIGEN EINKRISTALLEN DES SYSTEMS CUXHG1-XCR2SE4. = ETUDE DE QUELQUES MONOCRISTAUX DU SYSTEME CUXHG1-XCR2SE4OKONSKA KOZLOWSKA I; JELONEK M; DRZAGA Z et al.1977; Z. ANORG. ALLG. CHEM.; DTSCH.; DA. 1977; VOL. 436; NO 9; PP. 265-269; ABS. ANGL.; BIBL. 18 REF.Article

PROCEEDINGS OF THE FIRST U.S. WORKSHOP ON THE PHYSICS AND CHEMISTRY OF MERCURY CADMIUM TELLURIDE1982; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 1; PP. 109-262; BIBL. DISSEM.Article

ETUDES POLAROGRAPHIQUES DE SELS DE METHYL-1 BENZOTHIADIAZOLE- ET BENZOSELENADIAZOLE-2,1,3 EN MILIEU AQUEUXTSVENIASHVILI V SH; MALASHKHIYA MV; STRELETS B KH et al.1980; IZVEST. AKAD. NAUK GRUZ. S.S.R., SER. KHIM.; SUN; DA. 1980; VOL. 6; NO 1; PP. 60-65; ABS. GEO/ENG; BIBL. 12 REF.Article

Preparation and crystal structures of two new modifications of mercury(II) selenite(IV), HgSeO3, and the mixed-valent mercury(II) selenite(IV) selenide(-II), (HgSeO3)3HgSeWEIL, Matthias.Solid state sciences. 2002, Vol 4, Num 9, pp 1153-1162, issn 1293-2558Article

Preparation and characterization of Cd1-xHgxSe thin filmsWENG, S; COCIVERA, M.Chemistry of materials. 1992, Vol 4, Num 3, pp 615-619, issn 0897-4756Article

Growth of epitaxial films of the ternary compound Hg1-xCdxSe by using vapor transport techniqueKONG HONGZHI; SHI WEIDONG; WANG DECHANG et al.Chinese physics. 1988, Vol 8, Num 3, pp 804-807, issn 0273-429XArticle

Vapour transport of CdCr2S4 and HgCr2Se4: chemical equilibrium and crystal growthBELYAEV, V. K; NIKIFOROV, K. G; RADAUSTAN, S. I et al.Crystal research and technology (1979). 1989, Vol 24, Num 4, pp 371-377, issn 0232-1300Article

Etch pits and polarity identification in CdTe, HgSe and HgTe crystalsIWANAGA, H; TOMIZUKA, A; SHIBATA, N et al.Journal of crystal growth. 1986, Vol 74, Num 1, pp 113-117, issn 0022-0248Article

Even and odd moments: intrinsic properties of helical compoundsHAIJE, W. G; DOBBELAAR, J. A. L; WELTER, M. H et al.Chemical physics. 1987, Vol 116, Num 2, pp 159-170, issn 0301-0104Article

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