DER EINFLUSS DER EIGENDOTIERUNG DES HGSE AUF DEN REAKTIONSMECHANISMUS DER DOPPELTEN UMSETZUNG ZWISCHEN PBTE UND HGSE = L'INFLUENCE DU DOPAGE PROPRE DE HGSE SUR LE MECANISME DE REACTION DE LA DOUBLE CONVERSION ENTRE PBTE ET HGSELEUTE V; HORNISCHER R.1976; BER. BUNSENGESELLSCH. PHYS. CHEM.; DTSCH.; DA. 1976; VOL. 80; NO 2; PP. 146-152; ABS. ANGL.; BIBL. 12 REF.; (HAUPTVERSAMML. DTSCH. BUNSEN-GES. PHYS. CHEM. E.V. 75; SAARBRUECKEN; 1976)Article

ABSORPTION INTRINSEQUE ET ABSORPTION PAR LES PORTEURS LIBRES DANS CDSE-HGSEMARCHUK IV; PIDLISNYJ EV.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 8; PP. 1384-1386; BIBL. 5 REF.Article

BAND STRUCTURE OF HGSE AND MIXED CRYSTALS HG_1-XCD_X SE AND HGS_XSE_1-X FROM THE INTERBAND MAGNETOABSORPTIONMYCIELSKI A; KOSSUT J; DOBROWOLSKA M et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 15; PP. 3293-3318; BIBL. 2 P.Article

ELECTRONS SUPERFICIELS BIDIMENSIONNELS DANS HGSEMIN'KOV GM; RUT O EH; KRUZHAEV VV et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 9; PP. 2574-2576; BIBL. 5 REF.Article

PROCEDE CHIMIQUE DE DEPOT DES FILMS MIROIRS DE SELENIURE DE MERCURESELEZNEVA NA; PLOTNIKOVA OM; RED'KINA AI et al.1975; IZVEST. AKAD. NAUK KAZAKH. S.S.R., SER. KHIM.; S.S.S.R.; DA. 1975; VOL. 25; NO 4; PP. 87-89; ABS. KAZ.; BIBL. 11 REF.Article

THE MAGNETIC SUSCEPTIBILITY OF HG_1-XMN_XSE FOR SMALL XSONDERMANN U.1980; J. MAGN. MAGN. MATER.; ISSN 0304-8853; NLD; DA. 1980; VOL. 21; NO 3; PP. 228-232; BIBL. 12 REF.Article

DIAGRAMME DE PHASES DE HGSEOMEL'CHENKO AV; SOSHNIKOV VI.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 5; PP. 928-929; BIBL. 3 REF.Article

NUCLEATION OF PRESSURE INDUCED PHASE TRANSITIONS IN MERCURY SELENIDE.LOMBOS BA; MAHDALY HM; PANT BC et al.1977; CANAD. J. PHYS.; CANADA; DA. 1977; VOL. 55; NO 3; PP. 222-226; ABS. FR.; BIBL. 12 REF.Article

THE PARTIAL PRESSURES OF HG(G) AND SE_N(G) IN EQUILIBRIUM WITH CRYSTALLINE MERCURY SELENIDEMUNIR ZA; MESCHI DJ; POUND GM et al.1972; J. CRYST. GROWTH; NETHERL.; DA. 1972; VOL. 15; NO 4; PP. 263-267; BIBL. 18 REF.Serial Issue

ELECTRONIC DIFFUSION AND DIRECTIONAL ORDER IN THE MAGNETIC SEMICONDUCTOR HGCR₂SE₄MERCERON T; PORTE M.1981; IEEE TRANS. MAGN.; ISSN 0018-9464; USA; DA. 1981; VOL. 17; NO 3; PP. 1364-1366; BIBL. 7 REF.Article

IDENTIFICATION OF THE GASEOUS MOLECULES ZNS(G), ZNTE(G), CDTE(G), AND HGSE(G) IN EQUILIBRIUM WITH THE SOLID PHASEGRADE M; HIRSCHWALD W.1979; BER. BUNSENGE. PHYS. CHEM.; ISSN 0005-9021; DEU; DA. 1979; VOL. 83; NO 12; PP. 1269-1272; ABS. GER; BIBL. 5 REF.Article

THE EFFECTS OF PRESSURE ON THE ELASTIC CONSTANTS OF MERCURY SELENIDE UP TO THE PHASE TRANSITIONFORD PJ; MILLER AJ; SAUNDERS GA et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 4; PP. 657-671; BIBL. 27 REF.Article

MICROWAVE HELICON PROPAGATION AND THE DYNAMIC MAGNETIC SUSCEPTIBILITY IN HG_1-XMN_XSEMULLIN DP; GALAZKA RR; FURDYNA JK et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 1; PP. 355-362; BIBL. 24 REF.Article

PRESSURE DEPENDENCE OF THE GALVANOMAGNETIC PROPERTIES OF N- AND P-TYPE FERROMAGNETIC SEMICONDUCTORS HGCR₂SE₄SELMI A; GIBART P; WEILL G et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 665-668; ABS. FRE; BIBL. 7 REF.Article

REACTIONS A L'ELECTRODE DE HG AVEC PARTICIPATION DES ANIONS SE^2- ET TE^2-GLADYSHEV VP; KIREEVA EP.1972; ELEKTROKHIMIJA; S.S.S.R.; DA. 1972; VOL. 8; NO 7; PP. 1098; BIBL. 4 REF.Serial Issue

INFLUENCE OF THE SPIN DISORDER ON THE PLASMA EDGE IN N-TYPE HGCR₂SE₄SELMI A; LE TOULLEC R; FAYMONVILLE R et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 114; NO 2; PP. K97-K99; BIBL. 3 REF.Article

INFLUENCE DES PORTEURS CHAUDS DE COURANT SUR LES SPECTRES RAMAN DES SEMI-CONDUCTEURS MAGNETIQUES CDCR₂SE₄ ET HGCR₂SE₄SAMOKHVALOV AA; SUKHORUKOV YU P.1982; PIS'MA V ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0370-274X; SUN; DA. 1982; VOL. 35; NO 5; PP. 212-214; BIBL. 5 REF.Article

SPECIFIC HEAT MAGNETIC SUSCEPTIBILITY, AND THE SPIN-GLASS TRANSITION IN HG_1-XMN_XSEGUL DAD KHATTAK; AMARA EKARA CD; GALAZKA RR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 7; PP. 3553-3554; BIBL. 6 REF.Article

LATTICE-DYNAMICAL CONTRIBUTIONS TO G-VALUESSHRIVASTAVA KN.1982; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 18; PP. 3869-3876; BIBL. 12 REF.Article

CARACTERE ANORMAL DE LA CATHODOLUMINESCENCE DES SOLUTIONS SOLIDES A BASE DE SEMICONDUCTEURS FERROMAGNETIQUES HGCR₂SE₄ ET CDCR₂SE₄ANZIN VB; BOGDANKEVICH OV; BORISOV NA et al.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 3; PP. 673-676; BIBL. 9 REF.Article

MAGNETOOPTICAL INVESTIGATION OF HG_1-XCD_XSE MIXED CRYSTALSMYCIELSKI A; GULDNER Y; RIGAUX C et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1061-1065; BIBL. 20 REF.Article

SPECTROSCOPIE TUNNEL DE HGSE-NRUT O EH; KRUZHAEV VV; MIN'KOV GM et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 11; PP. 3212-3217; BIBL. 11 REF.Article

Growth of HgSe and Hg_1-xCd_xSe thin films by molecular beam epitaxyLANSARI, Y; COOK, J. W; SCHETZINA, J. F et al.Journal of electronic materials. 1993, Vol 22, Num 8, pp 809-813, issn 0361-5235Conference Paper

A COMPARISON OF MELTING POINT RELATIONS FOR METALS, TETRAHEDRAL SEMICONDUCTORS, AND METAL CARBIDES AND NITRIDES WITH THE ROCKSALT STRUCTUREVAN UITERT LG.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5547-5552; BIBL. 22 REF.Article

CROISSANCE EPITAXIQUE ISOTHERME DE COUCHES MINCES DES SOLUTIONS SOLIDES HG_XCD_1-XCR₂SE₄ SUR DES SUPPORTS MONOCRISTALLINS CDCR₂SE₄KOGUCHI N; MASUMOTO K.1981; NIPPON KINZOKU GAKKAISHI (1952); ISSN 0021-4876; JPN; DA. 1981; VOL. 45; NO 7; PP. 740-745; ABS. ENG; BIBL. 18 REF.Article