au.\*:("MERFELD, D. W")
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Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodesMERFELD, D. W; CAO, X. A; LEBOEUF, S. F et al.Journal of electronic materials. 2004, Vol 33, Num 11, pp 1401-1405, issn 0361-5235, 5 p.Article
Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nmCAO, X. A; YAN, C. H; D'EVELYN, M. P et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 242-248, issn 0022-0248, 7 p.Article
Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaNCAO, X. A; LEBOEUF, S. F; ARTHUR, S. D et al.SPIE proceedings series. 2004, pp 48-53, isbn 0-8194-5468-0, 6 p.Conference Paper
Carrier capture and recombination at localized states in InGaN/GaN light-emitting diodesCAO, X. A; LEBOEUF, S. F; ROWLAND, L. B et al.Proceedings - Electrochemical Society. 2003, pp 166-173, issn 0161-6374, isbn 1-56677-349-0, 8 p.Conference Paper