NUMERICAL SIMULATION OF HEATING EFFECTS DUE TO A LOW POWER ELECTRON IRRADIATION OF A SILICON WAFER WITH A CONVENTIONAL ELECTRON GUNLULLI G; MERLI PG.1981; OPTIK (STUTTGART); ISSN 0030-4026; DEU; DA. 1981; VOL. 60; NO 1; PP. 29-43; ABS. GER; BIBL. 14 REF.Article

NUMERICAL SIMULATION OF HEATING EFFECTS DUE TO A LOW POWER ELECTRON IRRADIATION OF A SILICON WAFER WITH A CONVENTIONAL ELECTRON GUNLULLI G; MERLI PG.1981; OPTIK (STUTTG.); ISSN 0030-4026; DEU; DA. 1981; VOL. 60; NO 1; PP. 29-43; ABS. GER; BIBL. 14 REF.Article

SELF-ANNEALING OF ION-IMPLANTED SILICON: FIRST EXPERIMENTAL RESULTSCEMBALI GF; MERLI PG; ZIGNANI F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 808-810; BIBL. 7 REF.Article

TRANSMISSION ELECTRON MICROSCOPY OBSERVATIONS OF P-N JUNCTIONS.MERLI PG; MISSIROLI GF; POZZI G et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 699-711; ABS. ALLEM.; BIBL. 17 REF.Article

LOW ANGLE ELECTRON DIFFRACTION WITH THE ELMISKOP 101 ELECTRON MICROSCOPEARMIGLIATO A; MERLI PG; RUFFINI G et al.1973; J. PHYS. E; G.B.; DA. 1973; VOL. 6; NO 1; PP. 35-39; BIBL. 11 REF.Serial Issue

METODI LITOGRAFICI PER LA TECNOLOGIA PLANARE. I. LITOGRAFIA OTTICA, A RAGGI X, ELETTRONICA A PROIEZIONE. = METHODES LITHOGRAPHIQUES POUR LA TECHNOLOGIE PLANAIRE. PHOTOLITHOGRAPHIE, LITHOGRAPHIE AUX RAYONS X, LITHOGRAPHIE PAR PROJECTION D'ELECTRONSARMIGLIATO A; COCITO M; MERLI PG et al.1977; ELETTRON. E TELECOMUNIC.; ITAL.; DA. 1977; VOL. 26; NO 2; PP. 67-80; ABS. ANGL.; BIBL. 36 REF.Article

LOW ANGLE ELECTRON DIFFRACTION WITH THE ELMISKOP 101 ELECTRON MICROSCOPEARMIGLIATO A; MERLI PG; RUFFINI G et al.1973; J. PHYS. E; G.B.; DA. 1973; VOL. 6; NO 1; PP. 35-39; BIBL. 11 REF.Serial Issue

CHARACTERIZATION OF MICROPLASMA SITES IN SILICON N⁺-P JUNCTIONS.DONOLATO C; MERLI PG; VECCHI I et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 3; PP. 473-474; BIBL. 10 REF.Article

THEORETICAL MODEL FOR INTERPRETING TEM IMAGES OF THINNED P-N JUNCTIONS.CAPILUPPI C; MERLI PG; POZZI G et al.1977; OPTIK; DTSCH.; DA. 1977; VOL. 47; NO 2; PP. 205-214; ABS. ALLEM.; BIBL. 11 REF.; (DGA O/NTG-TAG. VERARBEITUNG OPT. INF. BER.; NUERNBERG; 1976)Conference Paper

P-N JUNCTION OBSERVATIONS BY INTERFERENCE ELECTRON MICROSCOPY.MERLI PG; MISSIROLI GF; POZZI G et al.1974; J. MICR.; FR.; DA. 1974; VOL. 21; NO 1; PP. 11-20; H.T. 5; ABS. FR.; BIBL. 14 REF.Article

OUT-OF-FOCUS OBSERVATIONS OF P-N JUNCTIONS BY HIGH-VOLTAGE ELECTRON MICROSCOPY.CAPILUPPI C; MERLI PG; POZZI G et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 1; PP. 165-172; ABS. ALLEM.; BIBL. 12 REF.Article

SELF-ANNEALED ION IMPLANTED N⁺-P DIODESCEMBALI G; FINETTI M; MERLI PG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 62-64; BIBL. 4 REF.Article

INTERFERENCE ELECTRON MICROSCOPY IN THIN FILM INVESTIGATIONSMATTEUCCI G; MISSIROLI GF; POZZI G et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 62; NO 1; PP. 5-17; BIBL. 30 REF.Article