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Results 1 to 25 of 37

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Formation of graphite oxideMERMOUX, M; CHABRE, Y.Synthetic metals. 1990, Vol 34, Num 1-3, pp 157-162, issn 0379-6779, 6 p.Conference Paper

FTIR and 13C NMR study of graphite oxideMERMOUX, M; CHABRE, Y; ROUSSEAU, A et al.Carbon (New York, NY). 1991, Vol 29, Num 3, pp 469-474, issn 0008-6223Article

Intercalation of manganese chloride into mesophase pitch-based graphite fibers via gaseous complexesSARMEO, D; BLAZEWICZ, S; MERMOUX, M et al.Carbon (New York, NY). 2001, Vol 39, Num 13, pp 2049-2058, issn 0008-6223Article

In situ Raman monitoring of the growth of diamond films in plasma-assisted CVD reactorsMERMOUX, M; FAYETTE, L; MARCUS, B et al.Diamond and related materials. 1995, Vol 4, Num 5-6, pp 745-749, issn 0925-9635Conference Paper

Rôle de la température du substrat dans la synthèse des films de diamant déposés par CVD assistée plasma microonde = Role of substrate temperature in diamond film synnthesis deposited by microwave assisted plasma CVDROY, F; MERMOUX, M; MARCUS, B et al.Le Vide, les couches minces. 1991, Vol 47, Num 256, pp 353-355, issn 0223-4335, SUPConference Paper

Confocal Raman imaging for the study of HPHT and CVD diamond crystals and filmsMERMOUX, M; MARCUS, B; CRISCI, A et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 1, pp 97-102, issn 0031-8965, 6 p.Conference Paper

Potentialities of Raman Imaging for the Analysis of Oxide Scales Formed on Zircaloy-4 and M5® in Air at High Temperature : Advanced Characterization Techniques in High Temperature Oxidation and Corrosion StudiesIDARRAGA, I; MERMOUX, M; DURIEZ, C et al.Oxidation of metals. 2013, Vol 79, Num 3-4, pp 289-302, issn 0030-770X, 14 p.Article

High temperature processing of poly-SiC substrates from the vapor phase for wafer-bondingCHICHIGNOUD, G; PONS, M; BLANQUET, E et al.Surface & coatings technology. 2006, Vol 201, Num 7, pp 4014-4020, issn 0257-8972, 7 p.Conference Paper

Analysis of the fine structure of the Raman line and of X-ray reflection profiles for textured CVD diamond filmsFAYETTE, L; MERMOUX, M; MARCUS, B et al.Diamond and related materials. 1995, Vol 4, Num 11, pp 1243-1250, issn 0925-9635Article

Deep ultra-violet Raman imaging of CVD boron-doped and non-doped diamond filmsCRISCI, A; MERMOUX, M; SAUBAT-MARCUS, B et al.Diamond and related materials. 2008, Vol 17, Num 7-10, pp 1207-1211, issn 0925-9635, 5 p.Conference Paper

Surface study of iridium buffer layers during the diamond bias enhanced nucleation in a HFCVD reactorAMAULT, J. C; VONAU, F; MERMOUX, M et al.Diamond and related materials. 2004, Vol 13, Num 3, pp 401-413, issn 0925-9635, 13 p.Article

Strains and cracks in undoped and phosphorus-doped {111} homoepitaxial diamond filmsTAJANI, A; MERMOUX, M; MARCUS, B et al.Physica status solidi. A. Applied research. 2003, Vol 199, Num 1, pp 87-91, issn 0031-8965, 5 p.Conference Paper

In situ analysis of the Raman diamond line. Measurements in the visible and UV spectral rangeMERMOUX, M; FAYETTE, L; MARCUS, B et al.Physica status solidi. A. Applied research. 1996, Vol 154, Num 1, pp 55-68, issn 0031-8965Article

Characterization of tubular boron nitride filamentsGLEIZE, P; HERREYRE, S; GADELLE, P et al.Journal of materials science letters. 1994, Vol 13, Num 19, pp 1413-1415, issn 0261-8028Article

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurementsKARBOYAN, S; TARTARIN, J. G; ROMAIN-LATU, E et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1491-1495, issn 0026-2714, 5 p.Conference Paper

Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5)HARTMANN, J. M; ABBADIE, A; ROUCHON, D et al.Thin solid films. 2008, Vol 516, Num 12, pp 4238-4246, issn 0040-6090, 9 p.Article

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates : II. Strain and defectsHARTMANN, J. M; ABBADIE, A; ROUCHON, D et al.Semiconductor science and technology. 2007, Vol 22, Num 4, pp 362-368, issn 0268-1242, 7 p.Article

Optical mapping of aluminum doped p-type SiC wafersWELLAMNN, P. J; STRAUBINGER, T; CAMASSEL, J et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 4, pp 598-601, issn 0031-8965, 4 p.Conference Paper

In situ pulsed Raman study of the growth process of diamond films in a microwave plasma assisted CVD reactorMERMOUX, M; FAYETTE, L; MARCUS, B et al.Analusis (Imprimé). 1995, Vol 23, Num 7, pp 325-332, issn 0365-4877Article

Diamond nucleation and growth at the early stages on Si(100) monitored by electron spectroscopiesLE NORMAND, F; ABABOU, A; BRAUL, N et al.Applied surface science. 1994, Vol 81, Num 3, pp 309-324, issn 0169-4332Article

Sodium reactivity with anthracitic carbons at 700°CSECHET, C; SARMEO, D; MERMOUX, M et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1994, Vol 244-45, pp 555-560, issn 1058-725XConference Paper

Raman investigation of pre- and post-breakaway oxide scales formed on Zircaloy-4 and M5® in air at high temperatureIDARRAGA, I; MERMOUX, M; DURIEZ, C et al.Journal of nuclear materials. 2012, Vol 421, Num 1-3, pp 160-171, issn 0022-3115, 12 p.Article

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?VINCENT, B; DAMLENCOURT, J. F; CAMPIDELLI, Y et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 205-213, issn 1369-8001, 9 p.Conference Paper

Raman characterization of boron-doped {111} homoepitaxial diamond layersMERMOUX, M; JOMARD, F; TAVARES, C et al.Diamond and related materials. 2006, Vol 15, Num 4-8, pp 572-576, issn 0925-9635, 5 p.Conference Paper

BEN-HFCVD effects on diamond nucleation on iridium : a Raman imaging studyARNAU, J. C; SCHULL, G; MERMOUX, M et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 11, pp 2073-2078, issn 0031-8965, 6 p.Conference Paper

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