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THE USE OF III-V COMPOUNDS FOR INTEGRATED OPTICAL CIRCUITSMERZ JL.1982; FIBER AND INTEGRATED OPTICS; ISSN 0146-8030; USA; DA. 1982; VOL. 4; NO 2; PP. 143-157; BIBL. 28 REF.Article

III-V HETEROSTRUCTURE DEVICES FOR INTEGRATED OPTICSMERZ JL.1980; OPT. ENG.; ISSN 0091-3286; USA; DA. 1980; VOL. 19; NO 4; PP. 581-586; BIBL. 45 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASERS FABRICATED BY WET CHEMICAL ETCHING.MERZ JL; LOGAN RA.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3503-3509; BIBL. 15 REF.Article

INTEGRATED GAAS-ALX GA1-XAS INJECTION LASERS AND DETECTORS WITH ETCHED REFLECTORS.MERZ JL; LOGAN RA.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 10; PP. 530-533; BIBL. 15 REF.Article

LOSS MEASUREMENT IN P-TYPE GAAS DIELECTRIC WAVEGUIDES USING RAMAN SCATTERINGSERGENT AM; MERZ JL; LOGAN RA et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2552-2554; BIBL. 4 REF.Article

LOSS MEASUREMENTS IN GAAS AND ALXGA1-X AS DIELECTRIC WAVEGUIDES BETWEEN 1.1 EV AND THE ENERGY GAP.MERZ JL; LOGAN RA; SERGENT AM et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1436-1450; BIBL. 51 REF.Article

DEEP LEVELS IN ION-IMPLANTED SI AFTER BEAM ANNEALINGSHENG NH; MIZUTA M; MERZ JL et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 1; PP. 68-71; BIBL. 15 REF.Article

RAMAN SCATTERING AND ZONE-FOLDING EFFECTS FOR ALTERNATING MONOLAYERS OF GAAS-ALAS.MERZ JL; BARKER AS JR; GOSSARD AC et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 2; PP. 117-119; BIBL. 14 REF.Article

STUDY OF INTENSITY PULSATIONS IN PROTON-BOMBARDED STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE ALXGA1-XAS LASERSVAN DER ZIEL JP; MERZ JL; PAOLI TL et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4620-4637; BIBL. 54 REF.Article

LUMINESCENCE INVESTIGATIONS OF LASER-ANNEALED SIMIZUTA M; SHENG NH; MERZ JL et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 453-455; BIBL. 12 REF.Article

STUDY OF ZONE-FOLDING EFFECTS ON PHONONS IN ALTERNATING MONOLAYERS OF GAAS-ALASBARKER AS JR; MERZ JL; GOSSARD AC et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 17; NO 8; PP. 3181-3196; BIBL. 36 REF.Article

SATURABLE OPTICAL ABSORPTION OF THE DEEP TE-COMPLEX CENTER IN AL0.4GA0.6ASMERZ JL; VAN DER ZIEL JP; LOGAN RA et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 2; PP. 654-663; BIBL. 20 REF.Article

SHALLOW N ACCEPTOR IN N+-IMPLANTED ZNSEWU ZL; MERZ JL; WERKHOVEN CJ et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 345-346; BIBL. 13 REF.Article

TAPER COUPLERS FOR GAAS-ALXGA1-XAS WAVEGUIDE LAYERS PRODUCED BY LIQUID PHASE AND MOLECULAR BEAM EPITAXY.MERZ JL; LOGAN RA; WIEGMANN W et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 6; PP. 337-340; BIBL. 5 REF.Article

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