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POWER GAIN AND NOISE OF INP AND GAAS INSULATED GATE MICROWAVE FETSMESSICK L.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 71-76; BIBL. 23 REF.Article

A GAAS/SIXOYNZMIS FET.MESSICK L.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 12; PP. 5474-5475; BIBL. 10 REF.Article

A D.C. TO 16 GHZ INDIUM PHOSPHIDE MISFETMESSICK L.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 551-555; BIBL. 20 REF.Article

INP/SIO2 MIS STRUCTURE.MESSICK L.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 11; PP. 4949-4951; BIBL. 10 REF.Article

EVIDENCE OF DAMAGE AT GALLIUM ARSENIDE-INSULATOR INTERFACES.LUM WY; MESSICK L; ZEISSE CR et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 6; PP. 3602-3603; BIBL. 10 REF.Article

N-CHANNEL INVERSION-MODE INP M.I.S.F.E.T.LILE DL; COLLINS DA; MEINERS LG et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 20; PP. 657-658; BIBL. 14 REF.Article

A MICROWAVE INPSIO2 MISFET.MESSICK L; LILE DL; CLAWSON AR et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 8; PP. 494-495; BIBL. 3 REF.Article

DIRECT AND TEMPERATURE-MODULATED REFLECTANCE SPECTRA OF MNO, COO AND NIOMESSICK L; WALKER WC; GLOSSER R et al.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 10; PP. 3941-3949; BIBL. 28 REF.Serial Issue

A MICROWAVE GAAS INSULATED GATE FET.LILE DL; COLLINS DA; MESSICK L et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 247-248; BIBL. 14 REF.Article

A 64-bit 800-MHz insulated-gate CCD on InPMESSICK, L; COLLINS, D. A; LILE, D. L et al.IEEE electron device letters. 1986, Vol 7, Num 12, pp 680-682, issn 0741-3106Article

An InP MISFET with a power density of 1.8 W/mm at 30 GHzSAUNIER, P; NGUYEN, R; MESSICK, L. J et al.IEEE electron device letters. 1990, Vol 11, Num 1, pp 48-49, issn 0741-3106Article

Gigahertz logic gates based on InP-MISFET's with minimal drain current driftPANDE, K. P; FATHIMULLA, M. A; GUTIERREZ, D et al.IEEE electron device letters. 1986, Vol 7, Num 7, pp 407-409, issn 0741-3106Article

Ion-implanted high microwave power indium phosphide transistorsBIEDENBENDER, M. D; KAPOOR, V. J; MESSICK, L. J et al.IEEE transactions on microwave theory and techniques. 1989, Vol 37, Num 9, pp 1321-1326, issn 0018-9480Article

A stable indium-phosphide diffused junction field-effect transistor with high gain and low leakageZEISSE, C. R; NGUYEN, R; MESSICK, L. J et al.IEEE electron device letters. 1989, Vol 10, Num 8, pp 358-360, issn 0741-3106Article

Indium gallium arsenide microwave power transistorsJOHNSON, G. A; SHOKRANI, M; KAPOOR, V. J et al.IEEE transactions on microwave theory and techniques. 1991, Vol 39, Num 7, pp 1069-1075, issn 0018-9480Article

Submicron-gate InP power MISFET's with improved output power density at 18 and 20 GHzBIEDENBENDER, M. D; KAPOOR, V. J; SHALKHAUSER, K. A et al.IEEE transactions on microwave theory and techniques. 1991, Vol 39, Num 8, pp 1368-1375, issn 0018-9480Article

Radiation tolerance of NMOS technology on indium phosphideLILE, D. L; TAYLOR, M. J; MESSICK, L. J et al.IEEE electron device letters. 1984, Vol 5, Num 3, pp 94-96, issn 0741-3106Article

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