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Results 1 to 25 of 273

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DETECTION DES IMPURETES FORMANT DES NIVEAUX PROFONDS DANS LA ZONE PROHIBEE DE SI PAR LA METHODE CAPACITIVEBERMAN LS; KOZHUKHOVA EA; KORNILOV BV et al.1974; ZAVODSK. LAB.; S.S.S.R.; DA. 1974; VOL. 40; NO 10; PP. 1209-1211; BIBL. 8 REF.Article

MESURE SANS CONTACT DE L'EPAISSEUR DES DIELECTRIQUES PLANSKARTASHOVA AN; KRYUCHENKOV VV.1972; IZMERITEL. TEKH.; S.S.S.R.; DA. 1972; NO 7; PP. 34-35; BIBL. 3 REF.Serial Issue

EXPERIMENTAL OBSERVATIONS OF THE EFFECTS OF OXIDE CHARGE INHOMOGENEITY ON FAST SURFACE STATE DENSITY FROM HIGH-FREQUENCY MOS CAPACITANCE-VOLTAGE CHARACTERISTICS.MCNUTT MJ; SAH CT.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 378-380; BIBL. 9 REF.Article

KAPAZITIVES MESSEN DES WASSERGEHALTES VON SCHUETTGUETERN = MESURE CAPACITIVE DE L'HUMIDITE DES MATERIAUX EN VRACSCHAFER HG; JANSEN H.1975; GLUECKAUF-FORSCH.-H.; DTSCH.; DA. 1975; VOL. 36; NO NO 3; PP. 105-109; BIBL. 7 REF.Article

UNGEKLAERTE EFFEKTE BEI DER KAPAZITIVEN WASSERGEHALTSBESTIMMUNG VON KOHLEN = EFFETS INEXPLIQUES DANS LA DETERMINATION CAPACITIVE DE L'HUMIDITE DU CHARBONSCHAFER HG; JANSEN H.1975; GLUECKAUF-FORSCH.-H.; DTSCH.; DA. 1975; VOL. 36; NO 1; PP. 39-44; ABS. ANGL. FR.; BIBL. 12 REF.Article

MESURE DE LA CHARGE ACCELEREE DANS UN BETATRON A L'AIDE D'UNE ELECTRODE ELECTROSTATIQUE DE SIGNALMOSKALEV VA; GROMOV YU A.1974; IZVEST. TOMSK. POLITEKH. INST. S. M. KIROVA; S.S.S.R.; DA. 1974; VOL. 279; PP. 81-85; BIBL. 10 REF.Article

DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE.KAR S.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 169-181; BIBL. 21 REF.Article

EIN KAPAZITIVES VERFAHREN ZUR LEITFAEHIGKEITSMESSUNG AN HALBLEITERN BEI TIEFEN TEMPERATUREN (2,3 K BIS 300 K). = UNE METHODE CAPACITIVE POUR LA MESURE DE LA RESISTIVITE ELECTRIQUE DES SEMICONDUCTEURS A BASSE TEMPERATURE (2,3 A 300OK)HOYER W.1975; ARCH. ELEKTROTECH.; DTSCH.; DA. 1975; VOL. 57; NO 2; PP. 92-101; ABS. ANGL.; BIBL. 12 REF.Article

DETERMINATION SEPAREE DE LA POSITION DU CENTRE ET DE LA SECTION EFFICACE DE CAPTURE DANS LA METHODE DE CAPACITE THERMOSTIMULEEEREMIN VK; STROKAN NB; TUREBEKOV U SH et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 9; PP. 1743-1746; BIBL. 6 REF.Article

HEMISPHERICAL DIELECTRIC PERMITTIVITY CELL.HAYDEN JS; BERBERIAN JG.1978; REV. SCI. INSTRUM.; USA; DA. 1978; VOL. 49; NO 7; PP. 1014-1015; BIBL. 3 REF.Article

METHOD OF SEPARATING HYSTERESIS EFFECTS FROM MIS CAPACITANCE MEASUREMENTS.NAKAGAWA T; FUJISADA H.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 5; PP. 348-350; BIBL. 10 REF.Article

PECULIARITIES OF CAPACITIVE MEASUREMENT OF HEAT HUMIDITYPODKIN YU G; BODROV AI; IVANOV ES et al.1977; TORF. PROMYSHL.; S.S.S.R.; DA. 1977; NO 2; PP. 16-19; BIBL. 5 REF.Article

CAPACITANCE PROBE STUDY OF ROTATING-HEAD/TAPE INTERFACE.FELISS NA; TALKE EE.1977; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1977; VOL. 21; NO 3; PP. 289-293; BIBL. 9 REF.Article

STATIC TECHNIQUE FOR DIFFERENTIAL CAPACITANCE MEASUREMENTS IN MOS STRUCTURES.KIROV K; MINCHEV G; ALEXANDROVA S et al.1976; C.R. ACAD. BULG. SCI.; BULG.; DA. 1976; VOL. 29; NO 12; PP. 1749-1750; BIBL. 3 REF.Article

ON THE DETERMINATION OF THE ELECTRONIC PROPERTIES OF THE INACCESSIBLE THIN FILM SEMICONDUCTOR-SOLID SUBSTANCE INTERFACE BY THE MIS CAPACITANCE METHOD.SNEJDAR V; JERHOT J.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 26; NO 2; PP. 341-348; BIBL. 10 REF.Article

METHODE SANS CONTACT DE MESURE DE PUISSANCE EN TEMPS REEL DANS LES GUIDES D'ONDES ULTRASONORESFILIPCZYNSKI L; TOCZYSKI Z.1975; ARCH. AKUST.; POLSKA; DA. 1975; VOL. 10; NO 3; PP. 257-277; ABS. RUSSE ANGL.; BIBL. 13 REF.Article

AN INVESTIGATION OF THE SILICON-SAPPHIRE INTERFACE USING THE MIS CAPACITANCE METHOD.GOODMAN AM.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 63-65; BIBL. 13 REF.Article

ANALYSE DE LA METHODE CAPACITIVE DE MESURE D'HUMIDITE RELATIVE DE L'AIRVETROV VV; KATUSHKIN VP.1974; IZMERITEL. TEKH.; S.S.S.R.; DA. 1974; NO 5; PP. 65-66; BIBL. 3 REF.Article

KONZENTRATIONS-BZW. DICHTEMESSUNG VON PHYSIKALISCHEN GEMISCHEN BEI DER FOERDERUNG DURCH ROHRLEITUNGEN = CONCENTRATION AND DENSITY MEASUREMENT OF TWO-PHASE MIXTURES IN PIPES = MESURE DE CONCENTRATION ET DE DENSITE DE MELANGES PHYSIQUES AU COURS DE LEUR TRANSPORT EN CONDUITESKESKA J.1982; SENSOR '82-TRANSDUCER-TECHNIK U. TEMPERATURMESSUNG. KONFERENZ/1982/ESSEN; DEU/GBR; WUNSTORF; BUCKINGHAM: NETWORK; DA. 1982; PP. 168-185; BIBL. 5 REF.Conference Paper

A CAPACITIVE MULTI-CHANNEL LIQUID LEVEL MEASURING SYSTEM TO STUDY LIQUID MALDISTRIBUTIONS IN A PACKED COLUMNHOEK PJ; DE ROOIJ JG; HEEMSTRA T et al.1981; DELFT PROG. REP.; ISSN 0304-985X; NLD; DA. 1981; VOL. 6; NO 1; PP. 37-46; BIBL. 9 REF.Article

OPTICALLY ACTIVE INTERFACE STATES IN MOS STRUCTURESKAMIENIECKI E; NITECKI R; SWIATEK A et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 79-85; BIBL. 18 REF.Article

GENERATION LIFETIME INVESTIGATION OF ION-DAMAGE GETTERED SILICON USING MOS STRUCTURE.NASSIBIAN AG; BROWNE WA; PERKINS KD et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 3; PP. 992-996; BIBL. 13 REF.Article

INVESTIGATION OF DEEP TRAPS IN GAAS BY A CAPACITIVE METHOD.MITONNEAU A.1976; PHILIPS RES. REP.; NETHERL.; DA. 1976; VOL. 31; NO 3; PP. 244-256; BIBL. 15 REF.Article

A SIMPLIFIED TECHNIQUE FOR MEASURING FAST SURFACE STATES.SHINE MC.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 12; PP. 1135-1140; BIBL. 11 REF.Article

CAPACITIVE PROBE MEASUREMENTS OF DIPOLE DOMAINS IN INP. = MESURES A L'AIDE D'UNE SONDE CAPACITIVE DES DOMAINES DIPOLAIRES DANS INPROBSON PN; POTTER KE; MAJERFELD A et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 8; PP. 569-575; BIBL. 14 REF.Article

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