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Results 1 to 25 of 73

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WIDE SILICON RIBBON CRYSTALS.KURODA E; MATSUDA M; KOZUKA H et al.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 3; PP. 388-390; BIBL. 4 REF.Article

IMPURITY REDISTRIBUTION IN EFGKALEJS JP.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 3; PP. 329-344; BIBL. 22 REF.Article

MORPHOLOGY OF COPPER PRECIPITATES CHARACTERIZING LATTICE IMPERFECTION IN EFG RIBBON SILICONSHIMOKAWA R.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 97-108; BIBL. 30 REF.Article

EFFECT OF HEAT TRANSFER ON MELT/SOLID INTERFACE SHAPE AND SOLUTE SEGREGATION IN EDGE-DEFINED FILM-FED GROWTH: FINITE ELEMENT ANALYSISETTOUNEY HM; BROWN RA.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 2; PP. 313-329; BIBL. 27 REF.Article

EVALUATION OF TEMPERATURE DISTRIBUTION OF MELT IN SILICON RIBBON GROWTHKURODA E; MATSUDA M; KOZUKA H et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 471-477; BIBL. 9 REF.Article

DEEP LEVELS IN ELECTRON IRRADIATED EDGE-DEFINED FILM-FED GROWTH RIBBON SILICONJAWOROWSKI AE; PIERCE CB; BURDICK S et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3337-3340; BIBL. 18 REF.Article

SAPPHIRES EXPAND ELECTRONIC DEVICE APPLICATIONSMARUYAMA T; ISHIBITSU K; NOSAKA S et al.1978; J. ELECTRON. ENGNG; JPN; DA. 1978; NO 141; PP. 22-25Article

CROISSANCE DE CRISTAUX DE SAPHIR EN FORME DE RUBAN PAR LA TECHNIQUE DE CROISSANCE A ALIMENTATION CONTINUE ET A BORDS DEFINISHOSHIKAWA K; WADA K.1977; OYO BUTURI; JAP.; DA. 1977; VOL. 46; NO 9; PP. 938-942; BIBL. 15 REF.Article

GROWTH OF THIN PLATES OF BI12SIO20 SINGLE CRYSTALSMIYAMOTO K; MIYAMOTO H; KOMODA S et al.1980; MATER. RES. BULL.; ISSN 0025-5408; USA; DA. 1980; VOL. 15; NO 6; PP. 729-734; BIBL. 7 REF.Article

THE EFG PROCESS APPLIED TO THE GROWTH OF SILICON RIBBONS.SWARTZ JC; SUREK T; CHALMERS B et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 2; PP. 255-279; BIBL. 2 P.Article

Impurity transients in multiple crystal growth from a single crucible for EFG silicon octagons : American crystal growth 1996CAO, J; PRINCE, M; KALEJS, J. P et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 170-175, issn 0022-0248Conference Paper

Admissible manoeuvres in pulling rate for filament grown from the melt in a vacuum by EFG methodBRAESCU, L; BALINT, A. M; BALINT, St et al.Journal of crystal growth. 2001, Vol 233, Num 3, pp 425-430, issn 0022-0248Article

Quasiequilibrium meniscus formation with hysteresis effectsSHYY, W; UDAYKUMAR, H. S; LIANG, S. J et al.Physics of fluids. A, Fluid dynamics. 1993, Vol 5, Num 11, pp 2610-2623, issn 0899-8213Article

Growth of large Pb5Ge4(VO4)2 crystalsGOSPODINOV, M; SVESHTAROV, P.Crystal research and technology (1979). 1990, Vol 25, Num 3, pp K58-K61, issn 0232-1300Article

Oxygen- and carbon-related defects in edge-defined film-fed growth silicon ribbonPIVAC, B; DESNICA, U. V.Journal of applied physics. 1988, Vol 64, Num 4, pp 2208-2210, issn 0021-8979Article

Residual stresses of thin, short rectangular platesANDONIAN, A. T; DANYLUK, S.Journal of materials science. 1985, Vol 20, Num 12, pp 4459-4464, issn 0022-2461Article

Mechanisms for lateral solute segregation in edge-defined film-fed crystal growthETTOUNEY, H. M; BROWN, R. A.Journal of applied physics. 1984, Vol 55, Num 12, pp 4384-4391, issn 0021-8979Article

SHAPED CRYSTAL GROWTHCULLEN GW; SUREK T; ANTONOV PI et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; 396 P.; BIBL. DISSEM.Serial Issue

INTERFACE SHAPE STUDIES FOR SILICON RIBBON GROWTH BY THE EF6 TECHNIQUE. II: EFFECT OF DIE ASYMMETRYKALEJS JP.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 3; PP. 485-493; BIBL. 8 REF.Article

PHASE DETERMINATIONS AND CRYSTAL GROWTH OF PB2KNB5O15 (PKN)KRAMER WE; ROLAND GW.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 2; PP. 393-398; BIBL. 5 REF.Article

MODELING OF AMBIENT-MENISCUS MELT INTERACTIONS ASSOCIATED WITH CARBON AND OXYGEN TRANSPORT IN EFG OF SILICON RIBBONKALEJS JP; CHIN LY.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 6; PP. 1356-1361; BIBL. 14 REF.Article

THE RELATIONSHIP BETWEEN GROWTH ORIENTATION AND GRAIN BOUNDARY GENERATION IN SAPPHIRE PLATE CRYSTALS GROWN BY THE EFG TECHNIQUEZHANG SHOU QING; TANG LIANG AN; WANG WEN et al.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 3; PP. 659-662; BIBL. 7 REF.Article

EDGE-DEFINED, FILM-FED GROWTH OF MN2SIO4-MNO EUTECTIC COMPOSITES: EFFECT OF DIE-TOP GEOMETRY ON SOLIDIFICATION INTERFACE SHAPE.FINCH CB; HOLDER JD; CLARK GW et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 3; PP. 245-252; BIBL. 23 REF.Article

EPITAXIAL SILICON SOLAR CELLS ON RIBBON SUBSTRATES.KRESSEL H; D'AIELLO RV; LEVIN ER et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 39; NO 1; PP. 23-44; BIBL. 7 REF.Article

THE GROWTH OF EFG SILICON RIBBONS.RAVI KV.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 39; NO 1; PP. 1-16; BIBL. 33 REF.Article

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