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GROWTH OF TITANIUM SINGLE CRYSTALS BY ELECTROTRANSPORT.MORIN P; DE LA BATHIE P.1975; MATER. RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 6; PP. 511-514; BIBL. 9 REF.Article

OBTENTION DES MONOCRISTAUX DE LA MODIFICATION ALPHA DE CU2SEASADOV YU G; GASYMOV GB; DZHABRAILOVA GA et al.1972; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1972; VOL. 8; NO 12; PP. 2208; H.T. 1; BIBL. 1 REF.Serial Issue

COMMENTS ON THE "THE VALIDITY OF STEADY-STATE DENDRITE GROWTH MODELS" BY R.J. SCHAEFER.TRIVEDI R.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 1; PP. 110-111; BIBL. 7 REF.Article

CROISSANCE DE COUCHES MONOPHASEES LORS DE L'INTERDIFFUSION DANS UN SYSTEME BINAIRE MONOPHASEPIMENOV VN.1975; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1975; NO 6; PP. 60-65; BIBL. 8 REF.Article

THE EVOLUTION OF CRYSTAL GROWTH TECHNIQUES.PAMPLIN BR.1977; PROGR. CRYST. GROWTH CHARACTER.; G.B.; DA. 1977; VOL. 1; NO 1; PP. 5-22; BIBL. 3 P.Article

CROISSANCE DE CRISTAUX D'OR EN FORME D'AIGUILLES DANS LE SYSTEME METAL-CARBONE SOUS PRESSION ET TEMPERATURE ELEVEESBUTUZOV VP; LAPTEV VA; DUNIN VP et al.1975; DOKL. AKAD NAUK S.S.S.R.; S.S.S.R.; DA. 1975; VOL. 225; NO 1; PP. 88-90; BIBL. 5 REF.Article

PREPARATION DE COUCHE SEMICONDUCTRICE DE TITANATE DE BARYUM AVEC UN COEFFICIENT DE TEMPERATURE DE LA RESISTIVITE POSITIFNAGAI M; YANAGIDA H.1976; J. CERAM. SOC. JAP.; JAP.; DA. 1976; VOL. 84; NO 3; PP. 157-161; ABS. ANGL.; BIBL. 8 REF.Article

EPITAXIAL GROWTH BY SOLID-STATE DIFFUSION.GABOR T; DIERSSEN GH.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 3; PP. 430-433; BIBL. 10 REF.Article

DIAMOND FORMATION AT HIGH PRESSURES.WENTORF RH JR.1974; ADV. HIGH PRESS. RES.; U.S.A.; DA. 1974; VOL. 4; PP. 249-281; BIBL. 1 P. 1/2; 17 ILL.Article

SOLID-PHASE EPITAXIAL GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS.CANALI C; CAMPISANO SU; LAU SS et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 2831-2836; BIBL. 16 REF.Article

MONTE-CARLO SIMULATION OF DENDRITES DEVELOPING FROM VERY SMALL CRYSTALSFRANKE H; LACMANN R.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. 475-478; ABS. GER; BIBL. 7 REF.Article

EINE NEUE VERBINDUNG IM SYSTEM NIO-TIO2. = UN NOUVEAU COMPOSE DANS LE SYSTEME NIO-TIO2WERNER HD; GEBERT W.1976; NEU. JB. MINERAL., MONATSH.; DTSCH.; DA. 1976; NO 1; PP. 44-48; ABS. ANGL.; BIBL. 5 REF.Article

CONDITIONS DE FORMATION DU FERRITE-GRENAT D'YTTRIUMCHALYJ VP; DANIL'CHENKO KP.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 6; PP. 1089-1093; BIBL. 20 REF.Article

EPITAXIE DE PHASE SOLIDE DE GE SUR (111) SIKRYUGER DB; MIKHAJLOV IF; PALATNIK LS et al.1978; DOKL. AKAD. NAUK S.S.S.R.; SUN; DA. 1978; VOL. 243; NO 6; PP. 1448-1450; BIBL. 5 REF.Article

TRANSPORT ET CRISTALLISATION DE GE SUR ASGA EN PHASE SOLIDE.MOUTOU PC; MONTEL J.1977; DGRST-7571479; FR.; DA. 1977; PP. (53P.); H.T. 22; BIBL. 3 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: PHYS. ELECTRON.)Report

A STUDY OF PD2SI FILMS ON SILICON USING AUGER ELECTRON SPECTROSCOPY.FERTIG DJ; ROBINSON GY.1976; SOLID. STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 407-413; BIBL. 17 REF.Article

KISERLETEK SZILARD FAZISU KRISTALYNOEVEKEDESI FOLYAMATOK KOEREBOEL = ESSAIS DANS LE DOMAINE DE LA CROISSANCE CRISTALLINE EN PHASE SOLIDEMORLIN Z.1979; MAGYAR FIZ. FOLYOIRAT; HUN; DA. 1979; VOL. 27; NO 2; PP. 119-141; BIBL. 21 REF.Article

ELABORATION DE MONOCRISTAUX DE ZIRCONIUM ALPHA ET ETUDE DE LEUR PERFECTION CRISTALLINE.BRAICHOTTE G; COUTERNE JC; CIZERON G et al.1974; J. MATER. NUCL.; PAYS-BAS; DA. 1974; VOL. 54; NO 2; PP. 175-189; ABS. ANGL. ALLEM.; BIBL. 18 REF.Article

DISSOCIATION MECHANISM FOR SOLID-PHASE EPITAXY OF SILICON IN THE SI <100>/PA2SI/SI (AMORPHOUS) SYSTEM.PRETORIUS R; LIAU ZL; LAU SS et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 598-600; BIBL. 4 REF.Article

RAPID GROWTH OF SI BY SOLID-PHASE EPITAXY, INCLUDING COMPARISONS TO CONVENTIONAL SI CRYSTAL GROWTH.BOATRIGHT RL; MCCALDIN JO.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 938-939; BIBL. 9 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

SOLID STATE NUCLEATION IN THE TI-SI ULTRASHIN FILM SYSTEMBENE RW; YANG HY.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 1; PP. 1-10Article

RAPID GROWTH OF ALPHA -ZR SINGLE CRYSTALS USING A MASSIVE TRANSFORMATIONAKHTAR A.1976; J. MATER. NUCL.; PAYS-BAS; DA. 1976; VOL. 60; NO 3; PP. 344-346; BIBL. 16 REF.Article

ANTIMONY DOPING OF SI LAYERS GROWN BY SOLID-PHASE EPITAXY.LAU SS; CANALI C; LIAU ZL et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 3; PP. 148-150; BIBL. 8 REF.Article

ALLIAGES BORE-SILICIUM RICHES EN BORE. II: PREPARATION D'ALLIAGES HOMOGENES, ANALYSE, CROISSANCE CRISTALLINEVIALA JC; HILLEL R; BOUIX J et al.1980; J. LESS-COMMON METALS; NLD; DA. 1980; VOL. 71; NO 2; PP. 207-218; ABS. ENG; BIBL. 15 REF.Article

ETUDE DES TRANSFORMATIONS DE STRUCTURE ET DE PHASE DANS LES COUCHES TRIPLES TI-BA-TILOMOVOJ VV; ROMANOVA NI; TOCHITSKIJ EH I et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 5; PP. 861-865; BIBL. 7 REF.Article

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