Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("METHODE PHASE VAPEUR")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 6314

  • Page / 253

Export

Selection :

  • and

NEW VAPOUR DEPOSITION TECHNIQUE.DUGDALE RA.1974; NATURE; G.B.; DA. 1974; VOL. 249; NO 5456; PP. 440-441; BIBL. 13 REF.Article

PREPARATION AND PROPERTIES OF ANTIREFLECTION COATINGS BY CHEMICAL VAPOR DEPOSITIONHALL LH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4615-4621; BIBL. 19 REF.Serial Issue

ETUDE DE LA CARBYNE CONDENSEE A PARTIR DES VAPEURS DU CARBONEKASATOCHKIN VI; SAVRANSKIJ VV; SMIRNOV BN et al.1974; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1974; VOL. 217; NO 4; PP. 796-799; H.T. 2; BIBL. 9 REF.Article

NUCLEUS GROWTH RATE OF VACUUM-DEPOSITED THIN FILMS.LEWIS B; FUJIWARA S.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1735-1736; BIBL. 17 REF.Article

LOW CARBON CONTAMINATION OF EPITAXIAL GERMANIUM FILMS PRODUCED BY PYROLYSIS OF ALKYL GERMANIUM COMPOUNDS.AVIGAL Y; ITZHAK D; SCHIEBER M et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1226-1229; BIBL. 21 REF.Article

UEBER DEN MECHANISMUS DES WACHSTUMSSTOPPS VON KALIUMWHISKERN. = MECANISME DE CESSATION DE LA CROISSANCE DE TRICHITES DE POTASSIUMKLOEPPEL A; DITTMAR W.1975; Z. PHYS. CHEM., FRANKFURT; DTSCH.; DA. 1975; VOL. 95; NO 4-6; PP. 209-214; ABS. ANGL.; BIBL. 6 REF.Article

CARBON FORMATION ON IRON AND NICKEL FOILS BY HYDROCARBON PYROLYSIS - REACTIONS AT 700OC.BAIRD T; FRYER JR; GRANT B et al.1974; CARBON; G.B.; DA. 1974; VOL. 12; NO 5; PP. 591-602; BIBL. 25 REF.Article

ELECTRON MICROSCOPY OF SIZE DISTRIBUTION AND GROWTH OF SMALL ZINC CRYSTALS FORMED BY HOMOGENEOUS NUCLEATION IN A FLOWING INERT-GAS SYSTEM.EVERSOLE JD; BROIDA HP.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 2; PP. 596-602; BIBL. 10 REF.Article

FIBROUS GROWTH OF TANTALUM CARBIDE BY A-C DISCHARGE METHOD.TAKAHASHI T; SUGIYAMA K.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 5; PP. 714-718; BIBL. 8 REF.Article

ETUDE DU DEPOT DE MOLYBDENE EN PHASE VAPEUR A PARTIR DE MOCL5.CROSET M; COLOMBIER M.1974; DGRST-7371343; FR.; DA. 1974; PP. 1-6; BIBL. 2 REF.; (RAPP. FINAL, ACTION CONCERTEE: C.C.M.)Report

CRISTALLISATION DU SULFURE DE CADMIUM A PARTIR DE LA PHASE GAZEUSEBULAKH BM.1974; ROST KRISTALLOV; S.S.S.R.; DA. 1974; VOL. 10; PP. 98-114; BIBL. 36 REF.Article

ON THE GROWTH OF THICK EPITAXIAL PLATINUM FILMS WITH VARIOUS ORIENTATIONSREICHELT K; SCHOBER T; VIEHWEG J et al.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 18; NO 3; PP. 312; BIBL. 3 REF.Serial Issue

VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATESKUROIWA K; SUGANO T.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 138-140; BIBL. 13 REF.Serial Issue

TRANSPORT DU BORE DE LA SOURCE A LA COUCHE EPITAXIQUE LORS DE LA SUBLIMATION DE SILICIUM SOUS VIDELOGINOVA RG; RUBTSOVA RA; OVSYANNIKOV MI et al.1973; KRISTALLOGRAFIJA; S.S.S.R.; DA. 1973; VOL. 18; NO 2; PP. 374-376; BIBL. 4 REF.Serial Issue

GROWTH OF MN3O4 SINGLE CRYSTALS BY CHEMICAL TRANSPORT METHODYAMAMOTO N; NAGASAWA K; BANDO Y et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1754-1755; BIBL. 4 REF.Serial Issue

SILICON EPITAXIAL GROWTH BY ROTATING DISK METHODSUGAWARA K.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1749-1760; BIBL. 24 REF.Serial Issue

CROISSANCE DE TRICHITES DE NITRURE D'ALUMINIUM PAR REACTION EN PHASE VAPEURKATO A; TOMODA K.1972; NIPPON KAGAKU KAISHI; JAP.; DA. 1972; NO 12; PP. 2344-2348; ABS. ANGL.; BIBL. 15 REF.Serial Issue

FILMS ET COUCHES DE METAUX LANTHANIDESLISHENKO LG; NAZAROVA TS; ROZEN AA et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 243-244; BIBL. 6 REF.Serial Issue

POSSIBILITE DE CROISSANCE DE COUCHE EPITAXIQUE D'ARSENIURE DE GALLIUM PAR TRANSPORT CHIMIQUE DANS UN FLUX D'ARGONRTSKHILADZE VG; MOISTSRAPISHVILI AV; CHITORELIDZE GM et al.1972; SOOBSHCH. AKAD. NAUK GRUZ. S.S.R.; S.S.S.R.; DA. 1972; VOL. 67; NO 3; PP. 637-640; ABS. GEORGIEN, ANGL.; BIBL. 2 REF.Serial Issue

DETERMINATION EXPERIMENTALE DES VITESSES DE GERMINATION SPONTANEERYBIN EN; PANKRATOVA ME; KOGAN YA I et al.1976; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1976; VOL. 50; NO 3; PP. 769-771; BIBL. 5 REF.Article

DYNAMICAL INSTABILITY IN STOCHASTIC MODELS OF CRYSTAL GROWTH.SAITO Y.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 54; NO 3; PP. 201-202; BIBL. 5 REF.Article

PREPARATION AND PROPERTIES OF MGO SINGLE CRYSTALS GROWN BY CHEMICAL VAPOR DEPOSITION.BOOTH JR; KINGERY WD; BOWEN HK et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 29; NO 3; PP. 257-262; BIBL. 14 REF.Article

THE DEPOSITION OF TIN OXIDE FILMS FROM A D-C GLOW DISCHARGE.CARLSON DE.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 10; PP. 1334-1337; BIBL. 20 REF.Article

CROISSANCE EN PHASE VAPEUR DE MONOCRISTAUX DE BISBO4ITO S; KODAIRA K; TSUNASHIMA A et al.1975; J. CERAM. SOC. JAP.; JAP.; DA. 1975; VOL. 83; NO 8; PP. 407-410; ABS. ANGL.; BIBL. 9 REF.Article

CONE-HELIX GROWTH FORMS OF GRAPHITE.DOUBLE DD; HELLAWELL A.1974; ACTA METALLURG.; E.U.; DA. 1974; VOL. 22; NO 4; PP. 481-487; ABS. FR. ALLEM.; BIBL. 29 REF.Article

  • Page / 253