COMMENTS ON "MOBILITY DEGRADATION DUE TO THE GATE FIELD IN THE INVERSION LAYER OF MOSFET'S"SCHWARZ SA; THORNBER KK.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 11-12; BIBL. 8 REF.Article

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EFFECTS OF COLLECTOR EPITAXIAL LAYER ON THE SWITCHING SPEED OF HIGH-PERFORMANCE BIPOLAR TRANSISTORSTANG DD; MACWILLIAMS KP; SOLOMON PM et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 17-19; BIBL. 7 REF.Article

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APPLICATION OF ZONE PLATES TO ALIGNMENT IN X-RAY LITHOGRAPHYFELDMAN M; WHITE AD; WHITE DL et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 203-207; BIBL. 13 REF.Article

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REACTIVE ION ETCHING OF POLYSILICON AND TANTALUM SILICIDEBEINVOGL W; HASLER B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 125-130; BIBL. 26 REF.Article

CELLULE D'ACCELERATION A UTILISATION OPTIMALE DE LA PUISSANCE DE LA SOURCE D'OSCILLATIONS UHFKRAMSKOJ GD; MAKHNENKO LA.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 6; PP. 1117-1121; BIBL. 8 REF.Article

DEVELOPMENTS IN FABRICATION TECHNIQUES.LOAD J.1977; AUSTRAL. ELECTRON. ENGNG; AUSTRAL.; DA. 1977; VOL. 10; NO 12; PP. 42-44Article

THE EDUCATION CONNECTION.RAMSOM CJ.1976; IN: INT. ELECTRON. PACKAG. PROD. CONF. PROC. TECH. PROGRAMME; BRIGHTON, ENGL.; 1976; SURBITON; KIVER COMMUNICATIONS; DA. 1976; PP. 32-41; BIBL. 10 REF.Conference Paper

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QUANTITATIVE EXAMINATION OF PHOTOFABRICATED PROFILES. III: MEASUREMENT OF ETCH FACTORALLEN DM; HORNE DF; STEVENS GWW et al.1978; J. PHOTOGR.; GBR; DA. 1978; VOL. 26; NO 6; PP. 242-245; BIBL. 3 REF.Article

BALL SLIDES KEEP WAFER CUTTER IN GROOVEMACNICHOL A.1978; INSULAT. CIRCUITS; USA; DA. 1978; VOL. 24; NO 8; PP. 31-32Article

DESIGN MODEL FOR BULK CMOS SCALING ENABLING ACCURATE LATCHUP PREDICTIONWIEDER AW; WERNER C; HARTER J et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 240-245; BIBL. 11 REF.Article

HIGH RATE ALUMINIUM ETCHING IN A BATCH LOADED REACTIVE ION ETCHERSAIA RJ; GOROWITZ B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 247-251Article

A DEVICE FOR SPATIAL, TEMPORAL AND CONTRAST RESOLUTION MEASUREMENT USING A VDU SCREENUMBACH FW.1983; DISPLAYS; ISSN 0141-9382; GBR; DA. 1983; VOL. 4; NO 1; PP. 25-29; BIBL. 4 REF.Article

DRIFT-DIFFUSION THEORY OF SYMMETRICAL DOUBLE-JUNCTION DIODESSCHMIDT PE; HENISCH HK.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1129-1133; BIBL. 14 REF.Article

EQUIPEMENTS POUR LA MICROLITHOGRAPHIE - SITUATION ET TENDANCES DE DEVELOPPEMENTKASCHLIK K.1979; REV. IENA; DDR; DA. 1979; VOL. 19; NO 2; PP. 57-60; BIBL. 18 REF.Article

VERTIKALE MASKENSEGMENTIERUNG - EINE BASIS FUER DAS LAYOUT-TESTSYSTEM LOCATE = SEGMENTATION VERTICALE DES MASQUES. UNE BASE POUR LE SYSTEME DE CONTROLE DU TRACE LOCATEJAGER U.1979; TECH. MITT.-AEG-TELEFUNKEN; ISSN 0040-1447; DEU; DA. 1979; VOL. 69; NO 4; PP. 141-142; BIBL. 8 REF.Article

NEW CLEANING SYSTEM REMOVES REMNANT PARTICLES.WORKMAN DB.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 38-41; (3 P.)Article

ION BEAM ETCHING WITH REACTIVE GASESBOLLINGER LD.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 99-108; BIBL. 15 REF.Article

NEW APPROACH TO ELECTRON BEAM LITHOGRAPHYFULTON TA; DOLAN GJ.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 752-754; BIBL. 9 REF.Article

PLASMA ETCHER CAPITAL EQUIPEMENT DESIGN TRENDSBROWN HL.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 239-241Article

PROXIMITY EFFECT CORRECTION FOR ELECTRON BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSEOWEN G; RISSMAN P.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3573-3581; BIBL. 6 REF.Article