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COMMENTS ON "MOBILITY DEGRADATION DUE TO THE GATE FIELD IN THE INVERSION LAYER OF MOSFET'S"SCHWARZ SA; THORNBER KK.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 11-12; BIBL. 8 REF.Article

MASKED ION BEAM LITHOGRAPHY FOR SUBMICROMETER DEVICE FABRICATIONSLAYMAN CW; BARTELT JL; MCKENNA CM et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 208-214; BIBL. 11 REF.Article

EFFECTS OF COLLECTOR EPITAXIAL LAYER ON THE SWITCHING SPEED OF HIGH-PERFORMANCE BIPOLAR TRANSISTORSTANG DD; MACWILLIAMS KP; SOLOMON PM et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 17-19; BIBL. 7 REF.Article

CONTRAST ENHANCED PHOTOLITHOGRAPHYGRIFFING BF; WEST PR.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 14-16; BIBL. 7 REF.Article

APPLICATION OF ZONE PLATES TO ALIGNMENT IN X-RAY LITHOGRAPHYFELDMAN M; WHITE AD; WHITE DL et al.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 203-207; BIBL. 13 REF.Article

MICROSTRUCTURE FABRICATION.KEYES RW.1977; SCIENCE; U.S.A.; DA. 1977; VOL. 196; NO 4293; PP. 945-949; BIBL. 9 REF.Article

DO DISLOCATIONS HOLD TECHNOLOGICAL PROMISE.SCHOCKLEY W.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 75-78; BIBL. 2 REF.Article

MODELING THE EARLY EFFECT IN BIPOLAR TRANSISTORSHART BL.1983; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1983; VOL. 18; NO 1; PP. 139-140; BIBL. 3 REF.Article

VLSI METALLIZATION USING ALUMINIUM AND ITS ALLOYSPRAMANIK D; SAXENA AN.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 1; PP. 127-133; BIBL. 20 REF.Article

X-RAY LITHOGRAPHY APPLIED TO THE FABRICATION OF ONE MICROMETER N-CHANNEL METAL OXIDE SEMICONDUCTOR CIRCUITSFULS EN.1983; OPTICAL ENGINEERING; ISSN 0091-3286; USA; DA. 1983; VOL. 22; NO 2; PP. 199-202; BIBL. 8 REF.Article

COMPUTER SIMULATION OF AN OXIDE WALLED EMITTER STL GATEROULSTON DJ; DEPEY M.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 1; PP. 21-22; BIBL. 4 REF.Article

REACTIVE ION ETCHING OF POLYSILICON AND TANTALUM SILICIDEBEINVOGL W; HASLER B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 125-130; BIBL. 26 REF.Article

CELLULE D'ACCELERATION A UTILISATION OPTIMALE DE LA PUISSANCE DE LA SOURCE D'OSCILLATIONS UHFKRAMSKOJ GD; MAKHNENKO LA.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 6; PP. 1117-1121; BIBL. 8 REF.Article

DEVELOPMENTS IN FABRICATION TECHNIQUES.LOAD J.1977; AUSTRAL. ELECTRON. ENGNG; AUSTRAL.; DA. 1977; VOL. 10; NO 12; PP. 42-44Article

THE EDUCATION CONNECTION.RAMSOM CJ.1976; IN: INT. ELECTRON. PACKAG. PROD. CONF. PROC. TECH. PROGRAMME; BRIGHTON, ENGL.; 1976; SURBITON; KIVER COMMUNICATIONS; DA. 1976; PP. 32-41; BIBL. 10 REF.Conference Paper

UTILISATION D'UN RESEAU DE DIFFRACTION POUR LA DETERMINATION DES ARRONDIS SUR LES ANGLES DES ELEMENTS TOPOLOGIQUES DES MASQUES PHOTOGRAPHIQUESVOLKOV VV; GERASIMOV LL; KAPAEV VV et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 4; PP. 329-336; BIBL. 4 REF.Article

QUANTITATIVE EXAMINATION OF PHOTOFABRICATED PROFILES. III: MEASUREMENT OF ETCH FACTORALLEN DM; HORNE DF; STEVENS GWW et al.1978; J. PHOTOGR.; GBR; DA. 1978; VOL. 26; NO 6; PP. 242-245; BIBL. 3 REF.Article

BALL SLIDES KEEP WAFER CUTTER IN GROOVEMACNICHOL A.1978; INSULAT. CIRCUITS; USA; DA. 1978; VOL. 24; NO 8; PP. 31-32Article

IMPACT OF SCALING ON MOS ANALOG PERFORMANCEWONG S; SALAMA CAT.1983; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1983; VOL. 18; NO 1; PP. 106-114; BIBL. 26 REF.Article

A RE-EXTRAPOLATION TECHNIQUE IN NEWTON-SOR COMPUTER SIMULATION OF SEMICONDUCTOR DEVICESWANG CT.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1083-1087; BIBL. 12 REF.Article

EXPERIMENTAL ETCHING EQUIPMENTKILIAN R; LIEHR M.1978; PHILIPS TECH. REV.; NLD; DA. 1978-1979; VOL. 38; NO 2; PP. 51-53Article

ETCHING CHARACTERISTICS FOR ORGANOSILICAENDO N; MATSUI S.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 2; PART. 2; PP. L109-L111; BIBL. 6 REF.Article

FRAME REPETITION RATE FOR FLICKER-FREE VIEWING OF HIGHT VDU SCREENSBAUER D; BONACKER M; CAVONIUS CR et al.1983; DISPLAYS; ISSN 0141-9382; GBR; DA. 1983; VOL. 4; NO 1; PP. 31-33; BIBL. 9 REF.Article

PREPARATION OF LARGE-AREA, ELECTRON-TRANSPARENT SILICON SPECIMENS BY ANISOTROPIC ETCHINGVARKER CJ; CHANG LH.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 143-146; BIBL. 8 REF.Article

NATURAL LITHOGRAPHYDECKMAN HW; DUNSMUIR JH.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 377-379; BIBL. 8 REF.Article

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