TRANSISTORS HYPERFREQUENCES A HAUTE FIABILITE1980; INTER ELECTRON.; FRA; DA. 1980; NO 305; PP. 17-19; (2 P.)Article

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3-GHZ 15-W SILICON BIPOLAR TRANSISTORSUCHIZAKI I; HORI S; ODA Y et al.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 12; PP. 1038-1042; BIBL. 5 REF.Conference Paper

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ETAT ACTUEL ET PROBLEMES FONDAMENTAUX RELATIFS A L'ELABORATION DE TRANSISTORS MICROONDES. (REVUE)MURAV'EV VV; NAUMOVICH NM.1982; IZV. VYSS. UCEBN. ZAVED., RADIOELECTRON.; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 10; PP. 42-56; BIBL. 67 REF.Article

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SILICON BIPOLAR MICROWAVE POWER TRANSISTORSALLISON R.1979; I.E.E.E. TRANS. MICROWAVE. THEORY. TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 415-422; BIBL. 33 REF.Article

100 W A 1 GHZ AVEC LE PREMIER "SIT" HYPERFREQUENCE DU MARCHEDELLA MUSSIA JP.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 275; PP. 36-37Article

MODELLING OF MICROWAVE GAAS F.E.T. IN COMMON-GATE OPERATION.ZAPATA FERRER J; LORIOU B.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 4; PP. 106-107; BIBL. 4 REF.Article

ANALYSIS OF FREQUENCY-CONVERSION TECHNIQUES IN MEASUREMENTS OF MICROWAVE TRANSISTOR NOISE TEMPERATURES.CARUSO G; SANNINO M.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 11; PP. 870-873; BIBL. 5 REF.Article

MICROWAVE PACKAGING: CONCEPTIONS AND MISCONCEPTIONS.WADE PC.1976; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1976; VOL. 16; NO 9; PP. 65-69Article

WELLEN AUF GEKOPPELTEN ELEKTRODEN VON LEISTUNGS-FET = ONDES SUR DES ELECTRODES COUPLEES DU TEC PUISSANTHARTNAGEL HL; HEINRICH W; KRETSCHMER KH et al.1983; FREQUENZ; ISSN 0016-1136; DEU; DA. 1983; VOL. 37; NO 2; PP. 31-38; ABS. ENG; BIBL. 26 REF.Article

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