Novel analog self-electrooptic-effect devices : Smart pixelsMILLER, D. A. B.IEEE journal of quantum electronics. 1993, Vol 29, Num 2, pp 678-698, issn 0018-9197Article

Laser tuners and wavelength-sensitive detector based on absorbers in standing wavesMILLER, D. A. B.IEEE journal of quantum electronics. 1994, Vol 30, Num 3, pp 732-749, issn 0018-9197Article

Huygens's wave propagation principle correctedMILLER, D. A. B.Optics letters. 1991, Vol 16, Num 18, pp 1370-1372, issn 0146-9592Article

Optical bistability in self-electro-optic effect devices with asymmetric quantum wellsMILLER, D. A. B.Applied physics letters. 1989, Vol 54, Num 3, pp 202-204, issn 0003-6951, 3 p.Article

Analog differential self-linearized quantum-well self-electro-optic-effect modulatorDE SOUZA, E. A; CARRARESI, L; BOYD, G. D et al.Optics letters. 1993, Vol 18, Num 12, pp 974-976, issn 0146-9592Article

Optical logic using electrically connected quantum well PIN diode modulators and detectorsLENTINE, A. L; MILLER, D. A. B; HENRY, J. E et al.Applied optics. 1990, Vol 29, Num 14, pp 2153-2163, issn 0003-6935Article

Quantum well optical tri-state devicesLENTINE, A. L; HINTERLONG, S. J; CLOONAN, T. J et al.Applied optics. 1990, Vol 29, Num 8, pp 1157-1160, issn 0003-6935Article

Resonantly enhanced electron tunneling rates in quantum wellsLIVESCU, G; FOX, A. M; MILLER, D. A. B et al.Physical review letters. 1989, Vol 63, Num 4, pp 438-441, issn 0031-9007Article

Room-temperature electroabsorption and switching in a Gaas/AlGaAs superlatticeBAR-JOSEPH, I; GOOSSEN, K. W; KUO, J. M et al.Applied physics letters. 1989, Vol 55, Num 4, pp 340-342, issn 0003-6951Article

Femtosecond excitonic optoelectronicsKNOX, W. H; HENRY, J. E; GOOSSEN, K. W et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 12, pp 2586-2595, issn 0018-9197, 10 p.Article

Multistate self-electrooptic effect devicesLENTINE, A. L; MILLER, D. A. B; HENRY, J. E et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 8, pp 1921-1927, issn 0018-9197, 7 p.Article

Free carrier and many-body effects in absorption spectra of modulation-doped quantum wellsLIVESCU, G; MILLER, D. A. B; CHEMLA, D. S et al.IEEE journal of quantum electronics. 1988, Vol 24, Num 8, pp 1677-1689, issn 0018-9197Article

High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optimal modulatorKOREN, U; MILLER, B. I; TUCKER, R. S et al.Electronics Letters. 1987, Vol 23, Num 12, pp 621-622, issn 0013-5194Article

Low-voltage modulator and self-biased self-electro-optic-effect deviceWEINER, J. S; GOSSARD, A. C; ENGLISH, J. H et al.Electronics Letters. 1987, Vol 23, Num 2, pp 75-77, issn 0013-5194Article

Quadratic electro-optic effect due to the quantum-confined Stark effect in quantum wellsWEINER, J. S; MILLER, D. A. B; CHEMLA, D. S et al.Applied physics letters. 1987, Vol 50, Num 13, pp 842-844, issn 0003-6951Article

Multiple quantum well reflection modulatorBOYD, G. D; MILLER, D. A. B; CHEMLA, D. S et al.Applied physics letters. 1987, Vol 50, Num 17, pp 1119-1121, issn 0003-6951Article

Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structuresWEINER, J. S; PEARSON, D. B; MILLER, D. A. B et al.Applied physics letters. 1986, Vol 49, Num 9, pp 531-533, issn 0003-6951Article

Wavelength-selective voltage-tunable photodetector made from multiple quantum wellsWOOD, T. H; BURRUS, C. A; GNAUCK, A. H et al.Applied physics letters. 1985, Vol 47, Num 3, pp 190-192, issn 0003-6951Article

Novel hybrid optically bistable switch: the quantum well self-electro-optic effect deviceMILLER, D. A. B; CHEMLA, D. S; DAMEN, T. C et al.Applied physics letters. 1984, Vol 45, Num 1, pp 13-15, issn 0003-6951Article

Low capacitance CMOS silicon photodetectors for optical clock injectionLATIF, S; KOCABAS, S. E; TANG, L et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 4, pp 1129-1135, issn 0947-8396, 7 p.Article

Optically controlled optical gate with an optoelectronic dual diode structure: theory and experimentYAIRI, M. B; DEMIR, H. V; MILLER, D. A. B et al.Optical and quantum electronics. 2001, Vol 33, Num 7-10, pp 1035-1054, issn 0306-8919Article

Simultaneous measurement of electron and hole escape times from biased single quantum wellsCAVAILLES, J. A; MILLER, D. A. B; CUNNINGHAM, J. E et al.Applied physics letters. 1992, Vol 61, Num 4, pp 426-428, issn 0003-6951Article

THz pulses from the creation of polarized electron-hole pairs in biased quantum wellsPLANKEN, P. C. M; NUSS, M. C; KNOX, W. H et al.Applied physics letters. 1992, Vol 61, Num 17, pp 2009-2011, issn 0003-6951Article

Quantum well carier sweep out : relation to electroabsorption and exciton saturationFOX, A. M; MILLER, D. A. B; LIVESCU, G et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 10, pp 2281-2295, issn 0018-9197Article

Effect of collisions and relaxation on coherent resonant tunneling : hole tunneling in GaAs/Al_Ga_1-As double-quantum-well structuresLEO, K; JAGDEEP SHAH; GORDON, J. P et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 11, pp 7065-7068, issn 0163-1829, 4 p.Article