CHEMICALLY ETCHED-MIRROR GAINASP/IN LASERS. REVIEWIGA K; MILLER BI.1982; IEEE J. QUANTUM. ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 1; PP. 22-29; BIBL. 45 REF.Article

DIFFUSION OF CD ACCEPTORS IN INP AND A DIFFUSION THEORY FOR III-V SEMICONDUCTORSTIEN PK; MILLER BI.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 701-704; BIBL. 13 REF.Article

GALNASP/INP LASER WITH MONOLITHICALLY INTEGRATED MONITORING DETECTORIGA K; MILLER BI.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 9; PP. 342-343; BIBL. 6 REF.Article

C.W. OPERATION OF GALNASP/INP LASER WITH CHEMICALLY ETCHED MIRRORIGA K; MILLER BI.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 22; PP. 830-832; BIBL. 8 REF.Article

SUCCESSFUL LIQUID PHASE EPITAXIAL GROWTH AND OPTICALLY PUMPED LASER OPERATION OF IN⁰,5)GA⁰,5)P-GA⁰,4)AL⁰,6)AS DOUBLE HETEROSTRUCTURE MATERIAL.MILLER BI; JOHNSTON WD JR.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 216-218; BIBL. 13 REF.Article

DOUBLE-HETEROSTRUCTURE GAAS DISTRIBUTED-FEEDBACK LASER.SHANK CV; SCHMIDT RV; MILLER BI et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 200-201; BIBL. 12 REF.Article

MOLECULAR BEAM EPITAXIAL GROWTH OF INP.MCFEE JH; MILLER BI; BACHMANN KJ et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 259-272; BIBL. 49 REF.Article

VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERSCASEY HC JR; MILLER BI; PINKAS E et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1281-1287; BIBL. 21 REF.Serial Issue

SINGLE-MODE OPERATION OF COUPLED-CAVITY GAINASP/INP SEMICONDUCTOR LASERSEBELLING KJ; COLDREN LA; MILLER BI et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 6-8; BIBL. 10 REF.Article

GENERATION OF SINGLE-LONGITUDINAL-MODE SUBNANOSECOND LIGHT PULSES BY HIGH-SPEED CURRENT MODULATION OF MONOLITHIC TWO-SECTION SEMICONDUCTOR LASERSEBELING KJ; COLDREN LA; MILLER BI et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 21; PP. 901-902; BIBL. 5 REF.Article

NOVEL DEPOSIT/SPIN WAVEGUIDE INTERCONNECTION (DSWI) TECHNIQUE FOR SEMICONDUCTOR INTEGRATED OPTICSFURUYA K; MILLER BI; COLDREN LA et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 5; PP. 204-205; BIBL. 11 REF.Article

GAINASP/INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACETCOLDREN LA; IGA K; MILLER BI et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 8; PP. 681-683; BIBL. 20 REF.Article

ETCHED MIRROR AND GROOVE-COUPLED GAINASP/INP LASER DEVICES FOR INTEGRATED OPTICSCOLDREN LA; FURUYA K; MILLER BI et al.1982; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 10; PP. 1667-1676; BIBL. 39 REF.Article

COMBINED DRY AND WET ETCHING TECHNIQUES TO FORM PLANAR (011) FACETS IN GALNASP/INP DOUBLE HETEROSTRUCTURESCOLDREN LA; FURUYA K; MILLER BI et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 5; PP. 235-237; BIBL. 13 REF.Article

CRYSTALLOGRAPHIC FACETS CHEMICALLY ETCHED IN GALNASP/INP FOR INTEGRATED OPTICSFURUYA K; COLDREN LA; MILLER BI et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 17; PP. 582-583; BIBL. 7 REF.Article

LOW-RESISTANCE OHMIC CONTACTS TO P-INPCHENG CL; COLDREN LA; MILLER BI et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 17; PP. 755-756; BIBL. 10 REF.Article

PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300K CW OPERATIONDYMENT JC; D'ASARO LA; NORTH JC et al.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 726-728; BIBL. 8 REF.Serial Issue

SINGLE-MODE SEMICONDUCTOR LASER OPTICALLY PUMPED BY AN INJECTION LASERDAMEN TC; DUGUAY MA; MILLER BI et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 1; PP. 3-4; BIBL. 9 REF.Article

GAINASP/INP DH LASERS WITH A CHEMICALLY ETCHED FACETIGA K; POLLACK MA; MILLER BI et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1044-1047; BIBL. 17 REF.Article

GAAS-AL_XGA_1-XAS DOUBLE HETEROSTRUCTURE LASERS-EFFECT OF DOPING ON LASING CHARACTERISTICS OF GAAS = LASERS A DOUBLE HETEROSTRUCTURE EN GAAS-AL_XGA_1-XAS. EFFET DU DOPAGE SUR LES CARACTERISTIQUES LASER DE GAASPINKAS E; MILLER BI; HAYASHI I et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2827-2835; BIBL. 24 REF.Serial Issue

ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP/GA⁰,47)IN⁰,53)AS/INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBEMILLER BI; MCFEE JH; MARTIN RJ et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 44-47; BIBL. 19 REF.Article

HIGH QUANTUM EFFICIENCY INGAASP/INP LASERSTAMARI N; ORON M; MILLER BI et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1025-1027; BIBL. 13 REF.Article