kw.\*:("MINORITY CARRIER")
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DUREE DE VIE EFFECTIVE DES PORTEURS DE CHARGE MINORITAIRES DANS LES MAGNETODIODESKARAKUSHAN EH I; KARAPATINTSKIJ IA; STAFEEV VI et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 7; PP. 1190-1192; BIBL. 10 REF.Article
LA PHOTOCONDUCTIVITE NEGATIVE DU CARBURE DE SILICIUM INHOMOGENE DE LA MODIFICATION CUBIQUERODIONOV VN; SHAKALOV AP.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 4; PP. 695-698; BIBL. 9 REF.Article
EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article
NEW EXPERIMENTAL EVIDENCE FOR MINORITY-CARRIER REFLECTION AT NEGATIVE-BARRIER MIS CONTACTSTARR NG; PULFREY DL; ILES PA et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 6; PP. 1018-1021; BIBL. 14 REF.Article
THE INFLUENCE OF ILLUMINATION ON THE MAJORITY-CARRIER QUASI-FERMI-LEVEL IN THE SCHOTTKY-BARRIER DIODEHEASELL EL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 889-895; BIBL. 11 REF.Article
THE INFLUENCE OF SURFACE PROPERTIES ON MINORITY CARRIER LIFETIME AND SHEET CONDUCTANCE IN SEMICONDUCTORSWHITE AM.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 1; PP. L1-L3; BIBL. 3 REF.Article
MESURE DE LA DUREE DE VIE DES PORTEURS DE CHARGE MINORITAIRES DANS LES COUCHES TRES RESISTANTES DES STRUCTURES TRANSISTORSGRIGOR'EV BI; RUDSKIJ VA; TOGATOV VV et al.1981; RADIOTEKH. I ELEKTRON.; SUN; DA. 1981; VOL. 26; NO 7; PP. 1514-1521; BIBL. 8 REF.Article
LIFETIME DETERMINATION OF MOS DIODES WITH VERY THIN OXIDE BY THEIR PHOTOCURRENT SPECTRAHIROSE M; OSAKA Y.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8249-8251; BIBL. 10 REF.Article
A METHOD TO DETERMINE MINORITY CARRIER LIFETIME IN GAAS LIGHT-EMITTING DIODESMUELLER J; REICHL H; BERNT H et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 3; PP. 257-260; BIBL. 9 REF.Article
EINFLUSS HOHER VERSETZUNGSDICHTEN AUF DIE KENNLINIENCHARAKTERISTIK VON DIODEN = INFLUENCE DE DENSITES DE DISLOCATION PLUS ELEVEES SUR LES CARACTERISTIQUES DES COURBES CARACTERISTIQUES DES DIODESRICHTER H; HEYMANN G.1978; KRISTALL U. TECH.; DDR; DA. 1978; VOL. 13; NO 6; PP. 687-691; ABS. RUS; BIBL. 12 REF.Article
MESURE DE LA LONGUEUR DE DIFFUSION DE PORTEURS DE CHARGES MINORITAIRES DANS LES STRUCTURES P.N.LOVYAGIN RN; SEMENOVA NR.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 6; PP. 156-158; BIBL. 5 REF.Article
TRANSPARENT DYNAMIQUE OPTIQUEMENT CONTROLABLE, A STRUCTURE MDS A BASE D'ARSENIURE DE GALLIUMAGRAFENIN YU V; GETALOV VS; ZALETIN VM et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 327-330; BIBL. 6 REF.Article
MODIFICATION OF THE TRANSIENT CAPACITANCE ANALYSIS OF GAAS MIS STRUCTURES FOR MINORITY CARRIER LIFETIME DETERMINATIONBHATTACHARYYA AB; LAKSHMI E.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2116-2118; BIBL. 13 REF.Article
ON THE MINORITY CHARGE STORAGE FOR AN EPITAXIAL SCHOTTKY-BARRIER DIODECHUANG CT.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 700-705; BIBL. 15 REF.Article
MINORITY CARRIER TRANSPORT AND RADIATIVE RECOMBINATION IN ALXGA1-XAS VARIABLE-COMPOSITION STRUCTURESOSINSKII VI; MALYSHEV SA; RYZHKOV MP et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 43-50; ABS. GER; BIBL. 23 REF.Article
NEW EXPERIMENTAL EVIDENCE FOR MINORITY-CARRIER REFLECTION AT NEGATIVE-BARRIER MIS CONTACTSTARR NG; PULFREY DL; ILES PA et al.1982; IEEE TRANS. ACOUST. SPEECH SIGNAL PROCESS.; ISSN 0096-3518; USA; DA. 1982; VOL. 29; NO 6; PP. 1018-1021; BIBL. 14 REF.Article
TEMPERATURE DEPENDENT BARRIER INJECTION IN TRANSIT TIME DEVICES: STEADY STATEMUSTAFA M; AHMAD S.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6236-6239; BIBL. 15 REF.Article
GENERATION OF EXCESS MINORITY CARRIERS IN MOS DEVICES DUE TO GAMMA IRRADIATIONSINGH SK; KESHAW SINGH; SRIVASTAVA RS et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 103-104; BIBL. 6 REF.Article
MESURE DE LA DUREE DE VIE DES PORTEURS DE CHARGE MINORITAIRES DANS LES BASES DES STRUCTURES DIODES ET THYRISTORS SOUS DE FORTES DENSITES DE COURANTGRIGOR'EV BI; TOGATOV VV.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 5; PP. 1063-1071; BIBL. 5 REF.Article
EFFECT OF BACK SURFACE FIELD ON PHOTOCURRENT IN A SEMICONDUCTOR JUNCTIONAMITABHA SINHA; CHATTOPADHYAYA SK.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 943-951; BIBL. 28 REF.Article
MEASUREMENT OF MINORITY CARRIER LIFETIME PROFILES IN SILICON.SCHWAB G; BERNT H; REICHL H et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 91-94; H.T. 1; BIBL. 11 REF.Article
TRANSIENT RESPONSE OF OHMIC CONTACTS OPERATED IN THE TWO-CARRIER REGIME.CARUSO A; SPIRITO P; VITALE GF et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 769-771; BIBL. 4 REF.Article
DEPLETION LAYER EFFECTS IN THE OPEN-CIRCUIT-VOLTAGE-DECAY LIFETIME MEASUREMENTMAHAN JE; BARNES DL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 989-994; BIBL. 12 REF.Article
MINORITY CARRIER DIFFUSION LENGTH EBIC MEASUREMENTS IN CADMIUM TELLURIDEGAUGASH P; MILNES AG.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 4; PP. 921-924; BIBL. 17 REF.Article
THE MINORITY-CARRIER INJECTION IN THE COMPLETELY DEPLETED MSM STRUCTUREMALACHOWSKI MJ; STEPNIEWSKI J.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 381-385; BIBL. 9 REF.Article