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SUBTHRESHOLD CURRENT IN OXIDE ISOLATED STRUCTURESSUGINO M; AKERS LA.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 114-115; BIBL. 8 REF.Article

NATURE OF THE BAND DISCONTINUITIES AT SEMICONDUCTOR HETEROJUNCTION INTERFACESMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 3; PP. 163-166; BIBL. 19 REF.Article

DYNAMIQUE D'ALIGNEMENT DE LA CHARGE LORS DE L'IRRADIATION D'UNE STRUCTURE MDSVINETSKIJ VL; CHAJKA GE; SHEVCHENKO ES et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 8; PP. 1478-1482; BIBL. 6 REF.Article

Electrical characteristics of insulating aluminum nitride MIS nanostructuresABDALLAH, Bassam; AL-KHAWAJA, Sameer; ALKHAWWAM, Anas et al.Applied surface science. 2011, Vol 258, Num 1, pp 419-424, issn 0169-4332, 6 p.Article

CAPACITE DE LA STRUCTURE METAL-DIELECTRIQUE-SEMICONDUCTEURKONSTANTINOV OV; MEZRIN OA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1063-1069; BIBL. 10 REF.Article

ON THE ELECTRICAL PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL/INSULATOR/SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATESHASEGAWA H; SAWADA T.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 119-140; BIBL. 79 REF.Article

DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURECHEIN WEI JEN; CHUNG LEN LEE; TAN FU LEI et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 949-954; BIBL. 9 REF.Article

THEORY OF HETEROSTRUCTURE INVERSION-MODE METAL-INSULATOR-SEMICONDUCTOR FIELD EFFECT TRANSISTORSKOBAYASHI T.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2795-2806; BIBL. 26 REF.Article

THEORIE DES ETATS DE SURFACE ET DE LA CONDUCTIVITE DANS LES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEURGERGEL VA; SURIS RA.1983; ZURNAL EKSPERIMENTAL'NOJ I TEORETICESKOJ FIZIKI; ISSN 0044-4510; SUN; DA. 1983; VOL. 84; NO 2; PP. 719-736; ABS. ENG; BIBL. 13 REF.Article

ETUDE DE LA FIABILITE DU DIELECTRIQUE-PORTE DES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEURLASHEVSKIJ RA; FILARETOV GA; SHAPIRO LA et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 347-354; BIBL. 12 REF.Article

Anodic oxide metal-insulator-semiconductor structures on n-type InSbCHEN, C. W; LILE, D. L.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 5, pp 1122-1125, issn 0734-211X, 4 p.Article

Surface-field induced interband tunneling in InAsKUNZE, U.Zeitschrift für Physik. B, Condensed matter. 1989, Vol 76, Num 4, pp 463-472, issn 0722-3277, 10 p.Article

Thermal nitridation of silicon dioxide at atmospheric pressure: physico-chemical and electrical characterizationCHARTIER, J. L; PLANTARD, M; SERRARI, A et al.Applied surface science. 1989, Vol 40, Num 1-2, pp 65-76, issn 0169-4332, 12 p.Article

La théorie de la transformation d'échelle décrit-elle la magnétoconductivité des structures MDS à siliciumKRAVCHENKO, S. V; PUDALOV, V. M.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1989, Vol 50, Num 2, pp 65-69, issn 0370-274X, 5 p.Article

Radiation characteristics of epitaxial CaF2 on siliconNISHIOKA, Y; CHIH-CHEN CHO; SUMMERFELT, S. R et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1265-1270, issn 0018-9499, 1Conference Paper

APPAREILLAGE POUR L'ETUDE DES PARAMETRES DES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEUR PAR UNE METHODE DE CONDUCTIVITE.BELOTELOV SV; SURIS RA; FEDOROV VN et al.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; VOL. 6; NO 1; PP. 216-219; BIBL. 5 REF.Article

BARRIER HEIGHT MODIFICATION IN SCHOTTKY MIS DIODESSHOUSHA AHM.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 92; NO 6; PP. 293-296; BIBL. 7 REF.Article

COMPORTEMENT EN COURANT ALTERNATIF DE STRUCTURES EN COUCHES MINCES AL-SIO/B2O3-AUROPARS F; DELAUNAY G; PETIT C et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 76; NO 4; PP. 295-306; ABS. ENG; BIBL. 13 REF.Article

A NEW "SURFACE-STATES" MODE OF SWITCHING IN M-THIN INSULATOR-N-P+ DEVICESHABIB SED; ELTOUKHY AA.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 3027-3031; BIBL. 12 REF.Article

METHODE QUASI STATIQUE DE DETERMINATION DU POTENTIEL SUPERFICIEL D'UN SEMICONDUCTEUR DANS DES STRUCTURES MDSZAKHAROV AK; KORNYUSHKIN NA; NEIZVESTNYJ IG et al.1978; MIKROELEKTRONIKA; S.S.S.R.; DA. 1978; VOL. 7; NO 2; PP. 174-177; BIBL. 4 REF.Article

SOURCE DE FAIBLES COURANTS POUR LE CONTROLE NON DESTRUCTIF DES STRUCTURES METAL-DIELECTRIQUE-SEMICONDUCTEURSAL'MAN EG; SAMOJLOV VA; VERTOPRAKHOV VN et al.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 220-221; BIBL. 4 REF.Article

A PROPOSED MODEL OF MISS COMPOSED OF TWO ACTIVE DEVICESADAN A; ZOLOMY I.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 449-456; BIBL. 13 REF.Article

EXPERIMENTAL OBSERVATION OF SWITCHING IN MISM AND MISIM DEVICESDARWISH M; BOARD K.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 161-164; BIBL. 7 REF.Article

THEORY OF SWITCHING IN MISIM STRUCTURESDARWISH M; BOARD K.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 5; PP. 165-173; BIBL. 13 REF.Article

CARACTERISTIQUES VOLT-AMPERE DE STRUCTURE MDS TUNNEL SOUS ECLAIREMENTSACHENKO AV; KRUPNOVA IV.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 1; PP. 73-81; BIBL. 15 REF.Article

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