MESURES PAR TOPOGRAPHIE RX DES VARIATIONS LOCALES DE DISTANCE ET D'ORIENTATION ENTRE LES PLANS RETICULAIRES DES COUCHES EPITAXIQUESNITTONO O; SHIMIZU S.1977; J. VACUUM SOC. JAP.; JAP.; DA. 1977; VOL. 20; NO 10; PP. 351-357; ABS. ANGL.; BIBL. 9 REF.Article

THE INTERRELATIONSHIP BETWEEN INTERNAL BOUNDARIES OF LARGE AND SMALL MISFIT.MARCINKOWSKI MJ.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 213-224; ABS. ALLEM.; BIBL. 13 REF.Article

DISORIENTATION BETWEEN ANY TWO LATTICESBONNET R.1980; ACTA CRYSTALLOGR., SECT. A, CRYST. PHYS., DIFFR., THEOR. GEN. CRYSTALLOGR.; ISSN 0567-7394; DNK; DA. 1980; VOL. 36; NO 1; PP. 116-122; BIBL. 19 REF.Article

EFFECTS OF SUBSTRATE POTENTIAL ON INCOMMENSURATE EPITAXIES AT FINITE TEMPERATURESCHUI ST; WEEKS JD.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 10; PP. 4413-4418; BIBL. 20 REF.Article

THE EFFECT OF MISMATCH ON THE PERFORMANCE OF GAASSB PHOTODIODESMOON RL.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5561-5564; BIBL. 12 REF.Article

ASPECTS CRISTALLOCHIMIQUES DE LA FORMATION DES STRUCTURES MOS A BASE DE COMPOSES A^IIIB^VEMEL'YANOV AV; KUZ'MICHEVA GM; LAVRISHCHEV VP et al.1980; DOKL. AKAD. NAUK SSSR; ISSN 0002-3264; SUN; DA. 1980; VOL. 254; NO 3; PP. 636-640; BIBL. 7 REF.Article

SUR L'INFLUENCE THEORIQUE DE L'ACCORD PARAMETRIQUE A L'INTERFACE DE DEUX SOLIDES EN INTERACTION PHYSIQUE OU CHIMIQUEEON JG; COURTINE P.1979; C.R. ACAD. SCI., C; FRA; DA. 1979; VOL. 288; NO 1; PP. 17-19; ABS. ENG; BIBL. 7 REF.Article

ON INFINITELY ADAPTIVE CRYSTAL STRUCTURES.KITTEL C.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 8; PP. 519-520; BIBL. 4 REF.Article

GRAIN BOUNDARIES IN NIO. I: RELATIVE OF <001> TILT BOUNDARIESDHALENNE G; REVCOLEVSCHI A; GERVAIS A et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 1; PP. 267-276; ABS. GER; BIBL. 28 REF.Article

THE TRANSMISSION ELECTRON MICROSCOPE IMAGE CONTRAST OF EPITAXIAL INTERFACES WITH SMALL MISFITSAURET FD; BALL CAB; SNYMAN HC et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 61; NO 3; PP. 289-295; BIBL. 8 REF.Article

TETRAGONAL DISTORTION IN HETEROEPITAXIAL LAYERS: GE ON GAAS.HAGEN W.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 6; PP. 739-744; BIBL. 9 REF.Article

COMPUTERIZED METHOD TO DETERMINE CRYSTAL ORIENTATIONS FROM KIKUCHI PATTERNSHEILMANN P; CLARK WAT; RIGNEY DA et al.1982; ULTRAMICROSCOPY; ISSN 0304-3991; NLD; DA. 1982; VOL. 9; NO 4; PP. 365-371; BIBL. 13 REF.Article

HGTE/CDTE HETEROJUNCTIONS: A LATTICE-MATCHED SCHOTTKY BARRIER STRUCTUREKUECH TF; MCCALDIN JO.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3121-3128; BIBL. 28 REF.Article

IMPROVEMENTS TO MELT PREPARATION IN LPE GROWTH OF SEMICONDUCTOR HETEROSTRUCTURESNELSON AW; WHITE EAD.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 3; PP. 610-612; BIBL. 2 REF.Article

ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPERLATTICESCHU WK; SARIS FW; CHANG CA et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 1999-2010; BIBL. 23 REF.Article

STRAIN IN THE GA_XIN_1-XAS_YP_1-Y QUATERNARY COMPOUNDSONOMURA H; SUNATORI G; MIYAUCHI T et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5336-5338; BIBL. 3 REF.Article

A MODEL OF THE ICE-D-ELECTRON-METAL INTERFACEPAINTER KR; GROUT PJ; MARCH NH et al.1981; NUOVO CIMENTO B; ISSN 0369-3554; ITA; DA. 1981; VOL. 66; NO 2; PP. 202-206; ABS. ITA; BIBL. 9 REF.Article

CSL/DSC LATTICE MODEL FOR GENERAL CRYSTAL-CRYSTAL BOUNDARIES AND THEIR LINE DEFECTSBALLUFFI RW; BROKMAN A; KING AH et al.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 8; PP. 1453-1470; ABS. FRE/GER; BIBL. 49 REF.Article

MISFIT ACCOMMODATION IN EPITAXIAL MONOLAYERS ON (111) F.C.C. AND (110) B.C.C. SUBSTRATES. IV: ANALYTICAL APPROACH TO LOSS OF COMPLETE COHERENCESTOOP LCA; VAN DER MERWE JH.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 94; NO 4; PP. 341-352; BIBL. 8 REF.Article

THE ROLE OF LATTICE MISFIT IN EPITAXYVAN DER MERWE JH.1978; C.R.C. CRIT. REV. SOLID STATE MATER. SCI.; USA; DA. 1978; VOL. 7; NO 3; PP. 209-231; BIBL. 1 P.Article

TRANSMISSION ELECTRON MICROSCOPY OF INTERFACES IN III-V COMPOUND SEMICONDUCTORS.PETROFF PM.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 973-978; BIBL. 23 REF.Article

NEW ULTRA LOW-NOISE AVALANCHE PHOTODIODE WITH SEPARATED ELECTRON AND HOLE AVALANCHE REGIONSCAPASSO F.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 12-13; BIBL. 5 REF.Article

ANALYTICAL SELECTION OF IDEAL EPITAXIAL CONFIGURATIONS AND SOME SPECULATIONS ON THE OCCURRENCE OF EPITAXY. I: EPITAXY WITH RECTANGULAR INTERFACIAL ATOMIC MESHESVAN DER MERWE JH.1982; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 1; PP. 127-143; BIBL. 12 REF.Article

ELECTROREFLECTANCE INVESTIGATION OF IN_1-XGA_XAS_YP_1-Y LATTICE-MATCHED TO INPLAUFER PM; POLLAK FH; NAHORY RE et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 5; PP. 419-422; BIBL. 30 REF.Article

SUR LA RELAXATION DES TENSIONS INTERNES DANS LES SYSTEMES HETEROEPITAXIAUXTKHORIK YU A; KHAZAN LS.1979; DOKL. AKAD. NAUK UKR. S.S.R., A; UKR; DA. 1979; NO 8; PP. 662-664; ABS. ENG; BIBL. 5 REF.Article