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Fabrication of large area nano-rings for MRAM applicationYONG LUO; MISRA, Veena.Microelectronic engineering. 2008, Vol 85, Num 7, pp 1555-1560, issn 0167-9317, 6 p.Article

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N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO₂ gate dielectricsMISRA, Veena; KULKARNI, Manoj; ZHONG, Huicai et al.Journal of electronic materials. 2001, Vol 30, Num 12, pp 1499-1505, issn 0361-5235Conference Paper

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Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOSZHIQIANG CHEN; MISRA, Veena; HAGGERTY, Ryan P et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 10, pp 2253-2267, issn 0370-1972, 15 p.Conference Paper

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-κ PMOS ApplicationLEE, Bongmook; LICHTENWALNER, Daniel J; NOVAK, Steven R et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 9, pp 2928-2935, issn 0018-9383, 8 p.Article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si_1―xGe_x LayersALPTEKIN, Emre; KIRKPATRICK, Casey Joe; MISRA, Veena et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, issn 0018-9383, 8 p.Article

Characteristics of Ni/Gd FUSI for NMOS gate electrode applicationsLEE, Bongmook; BISWAS, Nivedita; NOVAK, Steven R et al.IEEE electron device letters. 2007, Vol 28, Num 7, pp 555-557, issn 0741-3106, 3 p.Article

Atomic Layer Deposition of SiO₂ for AlGaN/GaN MOS-HFETsKIRKPATRICK, Casey J; LEE, Bongmook; SURI, Rahul et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1240-1242, issn 0741-3106, 3 p.Article

Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETsKAYIS, Cemil; LEACH, Jacob H; ZHU, C. Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 79392F.1-79392F.12Conference Paper

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Modulation of drain current by redox-active molecules incorporated in Si MOSFETsGOWDA, Srivardhan; MATHUR, Guru; QILIANG LI et al.International Electron Devices Meeting. 2004, pp 707-710, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate DielectricKAYIS, Cemil; LEACH, Jacob H; ZHU, C. Y et al.IEEE electron device letters. 2010, Vol 31, Num 9, pp 1041-1043, issn 0741-3106, 3 p.Article

Porphyrins bearing arylphosphonic acid tethers for attachment to oxide surfacesMUTHUKUMARAN, Kannan; LOEWE, Robert S; AMBROISE, Arounaguiry et al.Journal of organic chemistry. 2004, Vol 69, Num 5, pp 1444-1452, issn 0022-3263, 9 p.Article

Thermal stability of TaSi_xN_y films deposited by reactive sputtering on SiO₂SUH, You-Seok; HEUSS, Greg P; MISRA, Veena et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 5, pp F79-F82, issn 0013-4651Article

Sub-2 nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile MemoryMINSEONG YUN; MUELLER, David W; HOSSAIN, Maruf et al.IEEE electron device letters. 2009, Vol 30, Num 12, pp 1362-1364, issn 0741-3106, 3 p.Article

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile OperationSARKAR, Biplab; RAMANAN, Narayanan; JAYANTI, Srikant et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 48-50, issn 0741-3106, 3 p.Article

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Investigation of the Origin of V_t/V_FB Modulation by La₂O₃ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High-κ Layer, and Interface PropertiesLEE, Bongmook; NOVAK, Steven R; LICHTENWALNER, Daniel J et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 9, pp 3106-3115, issn 0018-9383, 10 p.Article

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Porphyrin architectures tailored for studies of molecular information storageCARCEL, Carole M; LAHA, Joydev K; LOEWE, Robert S et al.Journal of organic chemistry. 2004, Vol 69, Num 20, pp 6739-6750, issn 0022-3263, 12 p.Article

Electrical properties of Ru and RuO₂ gate electrodes for Si-PMOSFET with ZrO₂ and Zr-silicate dielectricsHUICAI ZHONG; HEUSS, Greg; SUH, You-Seok et al.Journal of electronic materials. 2001, Vol 30, Num 12, pp 1493-1498, issn 0361-5235Conference Paper